digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 fax +1.908.245-0555 sales@digitroncorp.com www.digitroncorp.com rev. 20121228 MCR8SD, mcr8sm, mcr8sn silicon controlled rectifiers maximum ratings rating symbol value unit peak repetitive off-state voltage (1) peak repetitive reverse voltage (t j = -40 to +110c, sine wave, 50 to 60hz, gate open) MCR8SD mcr8sm mcr8sn v drm v rrm 400 600 800 v on-state rms current (180 conduction angles, t c = 80c) i t(rms) 8 a peak non-repetitive surge current (one half-cycle, sine wave, 60hz, t j = 110c) i tsm 80 a circuit fusing (t = 8.3ms) i 2 t 26.5 a 2 s forward peak gate power (pulse width 1.0s, t c = 80c) p gm 5 w forward average gate power (t = 8.3ms, t c = 80c) p g(av) 0.5 w forward peak gate current (pulse width 1.0s, t c = 80c) i gm 2 a operating temperature range t j -40 to +110 c storage temperature range t stg -40 to +150 c note 1: v drm and v rrm for all types can be applied on a continuous basis. ratings apply for zero or negative gate voltage; positive gate voltage sh all not be applied concurrent with negative potential on the anode. blocking voltages shall not be tested with a constant current source such that the volta ge ratings of the devices are exceeded. thermal characteristics characteristic symbol maximum unit thermal resistance, junction to case r ? jc 2.2 c/w thermal resistance, junction to ambient r ? ja 62.5 c/w maximum lead temperature for soldering purposes 1/8? from case for 10s t l 260 c electrical characteristics (t j = 25c, unless otherwise noted) characteristic symbol min typ max unit off characteristics peak forward blocking current or reverse blocking current (2) (v d = rated v drm or v rrm , r gk = 1k ? ) t j = 25c t j = 110c i drm, i rrm - - - - 10 500 a on characteristics peak on-state voltage (3) (i tm = 16a) v tm - - 1.8 v gate trigger current (continuous dc) (4) (v d = 12v, r l = 100 ? ) i gt 5.0 25 200 a holding current (4) ( v d = 12v, gate open, initiating current = 200ma) i h - 0.5 6.0 ma latch current (4) ( v d = 12v, i g = 200a) i l - 0.6 8.0 ma gate trigger voltage (continuous dc) (4) (v d = 12v, r l = 100 ? ) t j = 25c t j = -40c v gt 0.3 - 0.65 - 1.0 1.5 v * pulse width 2.0ms, duty cycle 2%.
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 MCR8SD, mcr8sm, mcr8sn silicon controlled rectifiers dynamic characteristics critical rate of rise of off-state voltage (v d = 67% v drm , r gk = 1k ? , c gk = 0.1f, t j = 110c) dv/dt 5.0 15 - v/s critical rate of rise of on-state current (i pk = 50a, pw = 40sec, di g /dt = 1 a/sec, i gt = 10ma) di/dt - - 100 a/s note 2: r gk = 1000 ohms included in measurement. note 3: indicates pulse test: pulse width 2.0ms, duty cycle 2%. note 4: does not include r gk in measurement. mechanical characteristics case to-220ab marking alpha-numeric pin out see below available non-rohs (standard) or rohs compliant (add pbf suffix). available as ?hr? (high reliability) screened per mil-prf- 19500, jantx level. add ?hr? suffix to base part number. fax +1.908.245-0555 sales@digitroncorp.com www.digitroncorp.com rev. 20121228
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 MCR8SD, mcr8sm, mcr8sn silicon controlled rectifiers fax +1.908.245-0555 sales@digitroncorp.com www.digitroncorp.com rev. 20121228
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 MCR8SD, mcr8sm, mcr8sn silicon controlled rectifiers fax +1.908.245-0555 sales@digitroncorp.com www.digitroncorp.com rev. 20121228
|
