, d nc. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 npn 2 ghz wideband transistor BF763 description npn transistor in a plastic sot54 (to-92 variant) envelope. it is primarily intended for use in rf amplifiers and oscillators. pinning pin description 1 2 3 emitter base collector fig.1 sot54. quick reference data symbol v(br)ceo ic pfot hfe fj parameter collector-emitter breakdown voltage dc collector current total power dissipation dc current gain transition frequency conditions open base up to tamb = 60 c lc = 5 ma; vce = 10 v; tj = 25 c lc = 5 ma; vce = 10 v; f = 100 mhz min. 15 - - 25 - typ. - - - - 1.8 max. - 25 360 250 - unit v ma mw ghz limiting values in accordance with the absolute maximum system (iec 134). symbol vcbo vceo lc plot tstg tj parameter collector-base voltage collector-emitter voltage dc collector current total power dissipation storage temperature junction temperature conditions open emitter open base up to tamb = 60 c min. - - - - -65 - max. 15 25 25 360 150 150 unit v v ma mw c c thermal resistance symbol rth j-a parameter thermal resistance from junction to ambient conditions in free air thermal resistance 250 k/w \.l .semi-oonduvtors reserves the right to change lest conditions, parameter limits ;md package dimensions without notice information lumished by nj semi-conductors n believed to he both accurate ami reliable ,il the lime of going to press. hoxvever si scmi-c niiuuttiirc .ixsuiikt mi responsibility for my errors or omissions discovered in its use nj semi-c ??:>, ii'rrs fn vcril\h jiil;v;hivi? ire. nrrtnf hetbrc nlntina
npn 2 ghz wideband transistor BF763 characteristics tj = 25 c unless otherwise specified. symbol v(br)ceo v(br)cbo vce sat icbo hfe fr f parameter collector-emitter breakdown voltage collector-base breakdown voltage collector-emitter saturation voltage collector cut-off current dc current gain transition frequency noise figure conditions lc = 1 ma; ib = 0 lc = 10na;le = 0 lc= 10ma; ib= 1 ma ie = 0;vcb= 10v lc = 5ma;vce=10v lc = 5 ma; vce = 10 v; f = 100 mhz lc = 5 ma; vce = 10 v; f = 800 mhz; tamb = 25 c; zs = 60 to min. 15 25 - - 25 - ? typ. - - - - - 1.8 5.0 max. - - 0.5 50 250 - - unit v v v na ghz db dimensions (mm mrm tit* ortfljnri dfm?p>ion*) unit mrrt a 52 50 b 048 0.40 "1 0.66 o.se c 045 0,40 d 4b 4.4 4 1,7 1.4 e 4.2 36 * 2.54 ?1 1.27 l 14,5 12.7 "t^t mu 25 4 nw 25 1 t.?inj r,,?n.m. ?mn ?i ion, ?. unconlmto! lo allow for (tew ol plaslic and tominal irregularlliei outum version sotm vardnt rifbibnce9 irc jedic to-92 eiaj sc^3
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