d a t a sh eet bf909; BF909R product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
features specially designed for use at 5 v supply voltage high forward transfer admittance short channel transistor with high forward transfer admittance to input capacitance ratio low noise gain controlled amplifier up to 1 ghz superior cross-modulation performance during agc. applications vhf and uhf applications with 3 to 7 v supply voltage such as television tuners and professional communications equipment. description enhancement type field-effect transistor in a plastic microminiature sot143 or sot143r package. the transistor consists of an amplifier mos-fet with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during agc. pinning caution the device is supplied in an antistatic package. the gate-source input must be protected against static discharge during transport or handling. pin symbol description 1 s, b source 2 d drain 3g 2 gate 2 4g 1 gate 1 fig.1 simplified outline (sot143) and symbol. bf909 marking code: m28. handbook, halfpage 43 2 1 top view mam124 s,b d g 1 g 2 fig.2 simplified outline (sot143r) and symbol. BF909R marking code: m29. handbook, halfpage top view mam125 - 1 s,b d g 1 g 2 34 1 2 quick reference data symbol parameter conditions min. typ. max. unit v ds drain-source voltage -- 7v i d drain current -- 40 ma p tot total power dissipation -- 200 mw t j operating junction temperature -- 150 c ? y fs ? forward transfer admittance 36 43 50 ms c ig1-s input capacitance at gate 1 - 3.6 4.3 pf c rs reverse transfer capacitance f = 1 mhz - 35 50 ff f noise ?gure f = 800 mhz - 2 2.8 db product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com bf909; BF909R
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