bd249, bd249a, bd249b, bd249c npn silicon power transistors
1 june 1973 - revised september 2002 specifications are subject to change without notice. designed for complementary use with the bd250 series 125 w at 25c case temperature 25 a continuous collector current 40 a peak collector current customer-specified selections available absolute maximum ratings at 25c case temperature (unless otherwise noted) notes: 1. this value applies for t p 0.3 ms, duty cycle 10%. 2. derate linearly to 150c case temperature at the rate of 1 w/c. 3. derate linearly to 150c free air temperature at the rate of 24 mw/c. 4. this rating is based on the capability of the transistor to operate safely in a circuit of: l = 20 mh, i b(on) = 0.4 a, r be = 100 ? , v be(off) = 0, r s = 0.1 ? , v cc = 20 v. rating symbol value unit collector-emitter voltage (r be = 100 ? ) bd249 bd249a bd249b bd249c v cer 55 70 90 115 v collector-emitter voltage (i c = 30 ma) bd249 bd249a bd249b bd249c v ceo 45 60 80 100 v emitter-base voltage v ebo 5v continuous collector current i c 25 a peak collector current (see note 1) i cm 40 a continuous base current i b 5a continuous device dissipation at (or below) 25c case temperature (see note 2) p tot 125 w continuous device dissipation at (or below) 25c free air temperature (see note 3) p tot 3w unclamped inductive load energy (see note 4) ?li c 2 90 mj operating junction temperature range t j -65 to +150 c storage temperature range t stg -65 to +150 c lead temperature 3.2 mm from case for 10 seconds t l 250 c sot-93 package (top view) pin 2 is in electrical contact with the mounting base. mdtraaa b c e 1 2 3 obsolete
bd249, bd249a, bd249b, bd249c npn silicon power transistors 2
june 1973 - revised september 2002 specifications are subject to change without notice. notes: 5. these parameters must be measured using pulse techniques, t p = 300 s, duty cycle 2%. 6. these parameters must be measured using voltage-sensing contacts, separate from the current carrying conta cts. ? voltage and current values shown are nominal; exact values vary slightly with transistor parameters. electrical characteristics at 25c case temperature parameter test conditions min typ max unit v (br)ceo collector-emitter breakdown voltage i c = 30 ma (see note 5) i b = 0 bd249 bd249a bd249b bd249c 45 60 80 100 v i ces collector-emitter cut-off current v ce = 55 v v ce = 70 v v ce = 90 v v ce =115 v v be =0 v be =0 v be =0 v be =0 bd249 bd249a bd249b bd249c 0.7 0.7 0.7 0.7 ma i ceo collector cut-off current v ce = 30 v v ce = 60 v i b =0 i b =0 bd249/249a bd249b/249c 1 1 ma i ebo emitter cut-off current v eb = 5 v i c =0 1 ma h fe forward current transfer ratio v ce = 4 v v ce = 4 v v ce = 4 v i c =1.5a i c = 15a i c = 25a (see notes 5 and 6) 25 10 5 v ce(sat) collector-emitter saturation voltage i b = 1.5 a i b = 5 a i c = 15a i c = 25a (see notes 5 and 6) 1.8 4 v v be base-emitter voltage v ce = 4 v v ce = 4 v i c = 15 a i c = 25 a (see notes 5 and 6) 2 4 v h fe small signal forward current transfer ratio v ce = 10 v i c = 1 a f = 1 khz 25 | h fe | small signal forward current transfer ratio v ce = 10 v i c = 1 a f = 1 mhz 3 thermal characteristics parameter min typ max unit r jc junction to case thermal resistance 1c/w r ja junction to free air thermal resistance 42 c/w resistive-load-switching characteristics at 25c case temperature parameter test conditions ? min typ max unit t on tu r n - o n t i m e i c = 5 a v be(off) = -5 v i b(on) = 0.5 a r l = 5 ? i b(off) = -0.5 a t p = 20 s, dc 2% 0.3 s t off turn-off time 0.9 s obsolete
bd249, bd249a, bd249b, bd249c npn silicon power transistors 3
june 1973 - revised september 2002 specifications are subject to change without notice. typical characteristics figure 1. figure 2. figure 3. typical dc current gain vs collector current i c - collector current - a 01 10 10 100 h fe - dc current gain 1 10 100 1000 tcs635ad v ce = 4 v t c = 25c t p = 300 s, duty cycle < 2% collector-emitter saturation voltage vs base current i b - base current - a 0001 001 01 10 10 100 v ce(sat) - collector-emitter saturation voltage - v 001 01 10 10 tcs635ab i c = 25 a i c = 20 a i c = 15 a i c = 10 a i c = 300 ma i c = 1 a i c = 3 a base-emitter voltage vs collector current i c - collector current - a 01 10 10 100 v be - base-emitter voltage - v 06 08 10 12 14 16 18 20 tcs635ac v ce = 4 v t c = 25c obsolete
bd249, bd249a, bd249b, bd249c npn silicon power transistors 4
june 1973 - revised september 2002 specifications are subject to change without notice. maximum safe operating regions figure 4. thermal information figure 5. maximum forward-bias safe operating area v ce - collector-emitter voltage - v 10 10 100 1000 i c - collector current - a 001 01 10 10 100 sas635ab bd249 bd249a bd249b bd249c t p = 300 s, d = 0.1 = 10% t p = 1 ms, d = 0.1 = 10% t p = 10 ms, d = 0.1 = 10% dc operation maximum power dissipation vs case temperature t c - case temperature - c 0 255075100125150 p tot - maximum power dissipation - w 0 20 40 60 80 100 120 140 tis635aa obsolete
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