? 2008 ixys all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0v, i d = 1ma 1000 v v gs(th) v ds = v gs , i d = 8ma 3.0 5.5 v i gss v gs = 30v, v ds = 0v 200 na i dss v ds = v dss 50 a v gs = 0v t j = 125c 3 ma r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 250 m ds99027b(05/08) hiperfet tm power mosfet n-channel enhancement mode avalanche rated, low q g , low intrinsic r g high dv / dt, low t rr ixfn38n100q2 v dss = 1000v i d25 = 38a r ds(on) 250m t rr 300ns symbol test conditions maximum ratings v dss t j = 25c to 150c 1000 v v dgr t j = 25c to 150c, r gs = 1 m 1000 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25c 38 a i dm t c = 25c, pulse width limited by t jm 152 a i ar t c = 25c 38 a e ar t c = 25c 60 mj e as t c = 25c 5 j dv/dt i s i dm , v dd v dss , t j 150c 20 v/ns p d t c = 25c 890 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c v isol 50/60 hz, rms, t = 1 minute 2500 v m d mounting torque 1.5/13 nm/lb.in. terminal connection torque 1.5/11.5 nm/lb.in. weight 30 g s g s d minibloc, sot-227 b (ixfn) e153432 g = gate d = drain s = source either source terminal at minibloc can be used as main or kelvin source features ? double metal process for low gate resistance ? minibloc, with aluminium nitride isolation ? unclamped inductive switching (uis) rated ? low package inductance ? fast intrinsic rectifier applications ? dc-dc converters ? switched-mode and resonant-mode power supplies ? dc choppers ? pulse generators advantages ? easy to mount ? space savings ? high power density
ixys reserves the right to change limits, test conditions, and dimensions. ixfn38n100q2 note: 1. pulse test, t 300 s, duty cycle d 2 % minibloc, sot-227 b outline m4 screws (4x) supplied dim. millimeter inches min. max. min. max. a 31.50 31.88 1.240 1.255 b 7.80 8.20 0.307 0.323 c 4.09 4.29 0.161 0.169 d 4.09 4.29 0.161 0.169 e 4.09 4.29 0.161 0.169 f 14.91 15.11 0.587 0.595 g 30.12 30.30 1.186 1.193 h 38.00 38.23 1.496 1.505 j 11.68 12.22 0.460 0.481 k 8.92 9.60 0.351 0.378 l 0.76 0.84 0.030 0.033 m 12.60 12.85 0.496 0.506 n 25.15 25.42 0.990 1.001 o 1.98 2.13 0.078 0.084 p 4.95 5.97 0.195 0.235 q 26.54 26.90 1.045 1.059 r 3.94 4.42 0.155 0.174 s 4.72 4.85 0.186 0.191 t 24.59 25.07 0.968 0.987 u -0.05 0.1 -0.002 0.004 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 20v, i d = 0.5 ? i d25 note 1 24 40 s c iss 13.5 nf c oss v gs = 0 v, v ds = 25v, f = 1mhz 1035 pf c rss 180 pf t d(on) resistive switching time 25 ns t r v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 28 ns t d(off) r g = 1 (external) 57 ns t f 15 ns q g(on) 250 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 60 nc q gd 105 nc r thjc 0.14 c/w r thck 0.05 c/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0v 38 a i sm repetitive, pulse width limited by t jm 152 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 300 ns q rm 1.4 c i rm 9a i f = 25a -di/dt = 100 a/ s v r = 100v
? 2008 ixys all rights reserved ixfn38n100q2 fig. 2. extended output characteristics @ 25oc 0 10 20 30 40 50 60 70 80 024681 01 21 4161 8202224 v ds - volts i d - amperes v gs = 10v 5v 6v fig. 3. output characteristics @ 125oc 0 5 10 15 20 25 30 35 40 0 2 4 6 8 1012141618202224 v ds - volts i d - amperes v gs = 10v 6v 5v fig. 1. output characteristics @ 25oc 0 5 10 15 20 25 30 35 40 0123456789101112 v ds - volts i d - amperes v gs = 10v 6v 5v fig. 4. r ds(on) normalized to i d = 19a value vs. junction temperature 0.4 0.8 1. 2 1. 6 2.0 2.4 2.8 3.2 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s (on) - normalized i d = 38a i d = 19a v gs = 10v fig. 6. drain current vs. case temperature 0 5 10 15 20 25 30 35 40 -50-25 0 25 50 75 100125150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) normalized to i d = 19a value vs. drain current 0.8 1. 0 1. 2 1. 4 1. 6 1. 8 2.0 2.2 2.4 2.6 0 10 20304050607080 i d - amperes r d s (on) - normalized t j = 1 25 o c t j = 25 o c v gs = 10v
ixys reserves the right to change limits, test conditions, and dimensions. ixfn38n100q2 ixys ref: f_38n100q2(95)5-27-08-b fig. 11. capacitance 10 0 1000 10000 100000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - pf c iss c oss c rss f = 1mhz fig. 10. gate charge 0 2 4 6 8 10 0 50 100 150 200 250 q g - nanocoulombs v g s - volts v ds = 500v i d = 19a i g = 10ma fig. 7. input admittance 0 5 10 15 20 25 30 35 40 45 50 55 60 3.0 3.5 4.0 4.5 5.0 5.5 6.0 v gs - volts i d - amperes t j = 125 o c 25 o c - 40 o c fig. 12. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th) j c - (oc/w) fig. 8. transconductance 0 10 20 30 40 50 60 70 80 0 10203040506070 i d - amperes g f s - siemens t j = - 40 o c 25 o c 12 5 o c fig. 9. source current vs. source-to- drain voltage 0 10 20 30 40 50 60 70 80 90 0.2 0.4 0.6 0.8 1.0 1.2 v sd - volts i s - amperes t j = 125 o c t j = 25 o c
|
