micropac industries, inc. optoelectronic products division 725 e.walnut st., garland, tx 75040 (972)272 - 3571 f ax (972)487 - 6918 www.micropac.com e - mail: optosales @ micropac.com 4N47U 4n48u jan, jantx, jantxv, and jans optocouplers 4n49u optoelectronic products division 06/23/03 features: certified to mil - prf - 14500/548 high reliability base lead provided for conventional tr ansistor biasing very high gain, high voltage transistor hermetically sealed for reliability and stability stability over wide temperature range high voltage electrical isolation applications: line receivers switchmode power supplies signal ground isol ation process control input/output isolation description very high gain optocoupler utilizing gaaias infrared led optically coupled to an n - p - n silicon phototransistor packaged in a hermetically sealed 6 - pin leadless chip carrier. the 4N47U , 4n48u and 4n49u optocouplers can be supplied to customer specifications as well as jan, jantx, jantxv, and jans quality levels. *absolute maximum ratings input to output voltage ................................ ................................ ................................ ................................ .......................... 1kv collector - base voltage ................................ ................................ ................................ ................................ ........................... 45v collector - emitter voltage ................................ ................................ ................................ ................................ ....................... 40v emitter - base voltage ................................ ................................ ................................ ................................ ................................ 7v input diode reverse voltage ................................ ................................ ................................ ................................ .................... 2v input diode continuous forward current at (or below) 25c free - air temperature (see note 1) ................................ .... 40ma continuous collector current ................................ ................................ ................................ ................................ .............. 50ma peak diode current (value applies for t w 1 m s, prr < 300pps) ................................ ................................ ........................ 1a continuous transistor power dissipation at (or below) 25c free - air temperature (see note 2) ................................ 300mw operating free - air temperature range ................................ ................................ ................................ ............. - 55c to +125c storage temperature ................................ ................................ ................................ ................................ .......... - 65c to +125c lead temperature (10 seconds maximum) ................................ ................................ ................................ ....................... 240c notes: 1. derate linearly to 125c free - air temperatu re at the rate of 0.40 ma/c. 2. derate linearly to 125c free - air temperature at the rate of 3 mw/c. * jedec registered data package dimensions sc hematic diagram pin 1 identifier 2 1 6 5 4 3 all dimensions are in inches [millimeters] 6 k a 1 4 b e 5 c 3 0.080 [2.03] 0.066 [1.68] 0.028 [0.71] 0.022 [0.56] 0.105 [2.67] 0.095 [2.41] 0.070 [1.78] 0.060 [1.52] 0.045 [1.14] 0.055 [1.40] 0.098 [2.49] 0.082 [2.08] 5 pls 0.175 [4.45] 0.165 [4.19] 0.250 [6.35] 0.240 [6.10]
micropac industries, inc. optoelectronic products division 725 e.walnut st., garland, tx 75040 (972)272 - 3571 fax (972)487 - 6918 www.micropac.com e - mail: optosales @ mi cropac.com 4N47U, 4n48u, and 4n49u jan, jantx, jantxv, and jans optocouplers 06/23/03 electrical characteristics t a = 25 c unless otherwise specified parameter symbol min typ max units test conditions n ote input diode static reverse current i r 100 na v r = 2v input diode static forward voltage - 55 c +25 c +100 c v f 1.0 0.8 0. 7 1.4 1.7 1.5 1.3 v i f = 10ma output transistor t a = 25 c unless otherwise specified parameter symbol min typ max units test conditions note collector - base breakdown voltage v (br)cbo 45 v i c = 100 m a, i e = 0, i f = 0 collector - emitt er breakdown voltage v (br)ceo 40 v i c = 1ma, i b = 0, i f = 0 emitter - collector breakdown voltage v (br)ebo 7 v i c = 0, i b = 100 m a, i f = 0 coupled characteristics t a = 25 c unless otherwise specified parameter symbol min typ max units te st conditions note on state collector current 4N47U 4n48u 4n49u i c(on) 0.5 1.0 2.0 5 10 ma v ce = 5v, i b = 0, i f = 1ma on state collector current 4N47U - 55 c 4n48u 4n49u i c(on) 0.7 1.4 2.8 ma v ce = 5v, i b = 0, i f = 2ma on state collector current 4N47U +100 c 4n48u 4n49u i c(on) 0.5 1.0 2.0 ma v ce = 5v, i b = 0, i f = 2ma 2 off state collector current +25 c i c(off) 100 na v ce = 20v, i b = 0, i f = 0ma off state collector current +100c i c(off) 100 m a v ce = 20v, i b = 0, i f = 0ma collector - emitter saturation voltage 4N47U 4n48u 4n49u v ce(sat) v ce(sat) v ce(sat) 0.3 0.3 0.3 v v v i c = 0.5ma, i b = 0, i f = 2ma i c = 1ma, i b = 0, i f = 2ma i c = 2ma, i b = 0, i f = 2ma input to output resistance r i - o 10 11 v in - out = 1kv 1 input to output capacitance c i - o 5 pf f = 1mhz, v in - out = 1kv 1 rise time / fall time 4N47U phototransistor operation 4n48u 4n49u t r / t f t r / t f t r / t f 20 25 25 m s m s m s v cc = 10v, i f = 10ma, r l = 100 w rise time/ fall time 4N47U photodiode operation 4n48u 4n49u t r / t f t r / t f t r / t f 0.85 0.85 0.85 m s m s m s v cc = 10v, i f = 10ma, r l = 100 w notes: 1. these parameters are measured between all phototransistor leads shorted together and with both input diode leads shorted together. 2. this parameter measure d using pulse techniques t w =100 m s, duty cycle < 1%. recommended operating conditions: parameter symbol min max units input current, low level i fl 0 100 m a input current, high level i fh 2 10 ma supply voltage v ce 5 10 v selection guide part number par t description 4N47U commercial 4n48u commercial 4n49u commercial jan4N47U jan screened jan4n48u jan screened jan4n49u jan screened jantx4N47U jantx screened jantx4n48u jantx screened jantx4n49u jantx screened jantxv4N47U jantxv screened jantxv4n 48u jantxv screened jantxv4n49u jantxv screened jans4N47U jans screened jans4n48u jans screened jans4n49u jans screened
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