this is information on a product in full production. november 2013 docid024808 rev 2 1/8 STPSC8H065C 650 v power schottky silicon carbide diode datasheet - production data features ? no or negligible reverse recovery ? switching behavior independent of temperature ? high forward surge capability description the sic diode is an ultrahigh performance power schottky diode. it is ma nufactured us ing a silicon carbide substrate. the wide band gap material allows the design of a schottky diode structure with a 650 v rating. due to the schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. the minimized capacitive charge at turn-off behavior is independent of temperature. especially suited for use in interleaved or bridge- less topologies, this dual -diode rectifier will boost the performance in hard switching conditions. its high forward surge capa bility ensures a good robustness during transient phases. a1 k a2 a1 a2 k to-220ab STPSC8H065Ct table 1. device summary symbol value i f(av) 2 x 4 a v rrm 650 v t j (max) 175 c www.st.com
characteristics STPSC8H065C 2/8 docid024808 rev 2 1 characteristics when the diodes 1 and 2 are used simultaneously: ? t j (diode 1) = p(diode1) x r th(j-c) (per diode) + p(diode2) x r th(c) to evaluate the conduction loss es use the following equation: p = 1.35 x i f(av) + 0.288 x i f 2 (rms) table 2. absolute ratings (limiting values per diode at 25 c unless otherwise specified) symbol parameter value unit v rrm repetitive peak reverse voltage 650 v i f(rms) forward rms current 22 a i f(av) average forward current t c = 145 c (1) , dc per diode 4 a t c = 145 c (2) , dc per device 8 a i fsm surge non repetitive forward current t p = 10 ms sinusoidal, t c = 25 c t p = 10 ms sinusoidal, t c = 125 c t p = 10 s square, t c = 25 c 38 35 200 a i frm repetitive peak forward current t c = 145 c (1) ,t j = 175 c, ? = 0.1 17 a t stg storage temperature range -65 to +175 c t j operating junction temperature (3) -40 to +175 c 1. value based on r th(j-c) max (per diode) 2. value based on r th(j-c) max (per device) 3. condition to avoid thermal runaway for a diode on its own heatsink dptot dtj --------------- 1 rth j a ? ?? ------------------------- - ? table 3. thermal resi stance parameters symbol parameter typ. max. unit r th(j-c) junction to case per diode 1.8 2.7 c/w per device 0.95 1.40 r th(c) coupling - 0.1 table 4. static electrical characteristics (per diode) symbol parameter tests conditions min. typ. max. unit i r (1) reverse leakage current t j = 25 c v r = v rrm -340 a t j = 150 c - 35 170 v f (2) forward voltage drop t j = 25 c i f = 4 a - 1.56 1.75 v t j = 150 c - 1.98 2.5 1. t p = 10 ms, ? < 2% 2. t p = 500 s, ? < 2%
docid024808 rev 2 3/8 STPSC8H065C characteristics 8 table 5. dynamic electrical characteristics (per diode) symbol parameter test conditions typ. unit q cj (1) total capacitive charge v r = 400 v 12.5 nc c j total capacitance v r = 0 v, t c = 25 c, f = 1 mhz 200 pf v r = 400 v, t c = 25 c, f = 1 mhz 21 1. most accurate value for the capacitive charge: q = c j (v r ).dv r cj v out 0 figure 1. forward voltage drop versus forward current (typical values, low level, per diode) figure 2. forward voltage drop versus forward current (typical values, high level, per diode) 0 1 2 3 4 5 6 7 8 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 t a =150 c t a =175 c t a =25 c pulse test : t p =500s t a =100 c a) i fm ( v fm (v) 0 4 8 12 16 20 24 28 32 36 40 012345678 t a =150 c t a =175 c t a =25 c pulse test : t p =500s t a =100 c i fm (a) v fm (v) figure 3. reverse leakage current versus reverse voltage applied (typical values, per diode) figure 4. peak forward current versus case temperature (per diode) i r (a) 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 0 50 100 150 200 250 300 350 400 450 500 550 600 650 t j =25 c t j =150 c t j =175 c v r (v) i m (a) 0 10 20 30 40 50 0 25 50 75 100 125 150 175 = 0.1 = 0.3 = 0.5 = 1 = 0.7 t c (c) t =tp/t tp
characteristics STPSC8H065C 4/8 docid024808 rev 2 figure 5. junction capacitance versus reverse voltage applied (typical values, per diode) figure 6. relative variation of thermal impedance junction to case versus pulse duration c j (pf) 0 50 100 150 200 250 0.1 1.0 10.0 100.0 1000.0 f=1 mhz v osc =30 mv rms t j =25 c v r (v) z th(j-c) /r th(j-c) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.e-05 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 single pulse t p (s) figure 7. non-repetitive peak surge forward current versus pulse duration (sinusoidal waveform, per diode) figure 8. total capacitive charges versus reverse voltage applied (typical values, per diode) i fsm (a) 1.e+01 1.e+02 1.e+03 1.e-05 1.e-04 1.e-03 1.e-02 t a =25 c t a =125 c t p (s) q cj (nc) 0 2 4 6 8 10 12 14 0 50 100 150 200 250 300 350 400 v r (v)
docid024808 rev 2 5/8 STPSC8H065C package information 8 2 package information ? epoxy meets ul94, v0 ? cooling method: conduction (c) ? recommended torque value: 0.4 to 0.6 nm in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions a nd product status are available at: www.st.com. ecopack ? is an st trademark. figure 9. to-220ab dimension definitions a f d1 j1 h1 ? p q d l1 l b e e1 e l20 l30 b1 c resin gate 0.5 mm max. protrusion (1) resin gate 0.5 mm max. protrusion (1) (1) resin gate position accepted in each of the two position shown as well as the symmetrical opposites
package information STPSC8H065C 6/8 docid024808 rev 2 table 6. to-220ab dimensions values ref. dimensions millimeters inches min. max. min. max. a 4.40 4.60 0.17 0.18 b 0.61 0.88 0.024 0.035 b1 1.14 1.70 0.045 0.067 c 0.48 0.70 0.019 0.027 d 15.25 15.75 0.60 0.62 d1 1.27 typ. 0.05 typ. e 10 10.40 0.39 0.41 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.19 0.20 f 1.23 1.32 0.048 0.052 h1 6.20 6.60 0.24 0.26 j1 2.40 2.72 0.094 0.107 l13 14 0.510.55 l1 3.50 3.93 0.137 0.154 l20 16.40 typ. 0.64 typ. l30 28.90 typ. 1.13 typ. ? p 3.75 3.85 0.147 0.151 q 2.65 2.95 0.104 0.116
docid024808 rev 2 7/8 STPSC8H065C ordering information 8 3 ordering information 4 revision history table 7. ordering information order code marking package weight base qty delivery mode STPSC8H065Ct STPSC8H065Ct to-220ab 1.86 g 50 tube table 8. document revision history date revision changes 24-jun-2013 1 first issue. 07-nov-2013 2 updated figure 1 and figure 2 .
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