npn 2n3713 ? 2n3714 ? 2n3715 ? 2n3716 05/11/2012 comset semiconductors 1 | 4 e e p p i i t t a a x x i i a a l l - - b b a a s s e e t t r r a a n n s s i i s s t t o o r r s s the 2n3713, 2n3714, 2n3715 and 2n3716 are silicon epitaxial-base npn power transistor in jedec to-3 metal case. they are inteded for use in power linear and switching applications. the complementary pnp types are 2n3789, 2n3790, 2n3791 and 2n3792 respectively. compliance to rohs . absolute maximum ratings symbol ratings value unit v cbo collector-basevoltage i e = 0 2n3713 80 v 2n3715 2n3714 100 2n3716 v ceo collector-emitter voltage i b = 0 2n3713 60 v 2n3715 2n3714 80 2n3716 v ebo emitter-base voltage i c = 0 7.0 v i c collector current 10 a i b base current 4.0 a p d total device dissipation @ t c = 25 150 w t j junction temperature -65 to +200 c t s storage temperature thermal characteristics symbol ratings value unit r thjc thermal resistance, junction to case (max) 1.17 c/w
npn 2n3713 ? 2n3714 ? 2n3715 ? 2n3716 05/11/2012 comset semiconductors 2 | 4 eletrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ max unit v ceo(br) collector-emitter breakdown voltage i c =200 ma, i b =0 (*) 2n3713 60 - - v 2n3715 2n3714 80 - - 2n3716 v ceo(sus) collector-emitter sustaining voltage (*) i c =200 ma, i b =0 (*) 2n3713 60 - - v 2n3715 2n3714 80 - - 2n3716 i ceo collector-emitter current v ce =30 v, i b =0 2n3713 - - 0.7 ma 2n3715 v ce =40 v, i b =0 2n3714 - - 0.7 2n3716 i cev collector cutoff current v ce =80 v, v eb =-1.5 v 2n3713 - - 1 ma 2n3715 v ce =100 v, v eb =-1.5 v 2n3714 - - 1 2n3716 v ce =60 v, v eb =-1.5 v t c = 150c 2n3713 - - 10 2n3715 v ce =80 v, v eb =-1.5 v t c = 150c 2n3714 - - 10 2n3716 i ebo emitter cutoff current v be =7 v, i c =0 2n3713 - - 5 ma 2n3714 2n3715 2n3716 h fe dc current gain (*) (**) i c =1 a, v ce =2 v 2n3713 25 - 90 - 2n3714 2n3715 50 - 150 2n3716 i c =3 a, v ce =2 v 2n3713 15 - - 2n3714 2n3715 30 - - 2n3716 i c =10 a, v ce =4 v 2n3713 5 - - 2n3714 2n3715 2n3716 v ce(sat) collector-emitter saturation voltage (*) (**) i c =5 a, i b =0.5 a 2n3713 - - 1 v 2n3714 2n3715 - - 0.8 2n3716
npn 2n3713 ? 2n3714 ? 2n3715 ? 2n3716 05/11/2012 comset semiconductors 3 | 4 eletrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ max unit v be(sat) base-emitter saturation voltage (*) (**) i c =5 a, i b =0.5 a 2n3713 - - 2 v 2n3714 2n3715 - - 1.5 2n3716 v be base-emitter voltage (*) (**) i c =3 a, v ce =2 v 2n3713 - - 1.5 v 2n3714 2n3715 2n3716 h fe small signal current gain v ce =10 v, i c =0.5 a f=1.0 khz 2n3713 25 - 250 - 2n3714 2n3715 2n3716 v ce =10 v, i c =0.5 a f=1.0 mhz 2n3713 4 - 4 - 2n3714 2n3715 2n3716 (*) pulse width 300 s, duty cycle 2.0% (**) these parameters are measured with voltage sens ing contacts separate from the current carrying contacts
npn 2n3713 ? 2n3714 ? 2n3715 ? 2n3716 05/11/2012 comset semiconductors 4 | 4 mechanical data case to-3 revised september 2012 ????????? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assu mes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. comset se miconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does comset semiconductors assu me any liability arising out of the applic ation or use of any product and specifica lly disclaims any and all liability, including without limitation consequential or inci dental damages. comset semicon ductors? products are not author ized for use as critical components in life support devices or systems. ? www.comsetsemi.com info@comsetsemi.com dimensions (mm) min max a 11 13.10 b 0.97 1.15 c 1.5 1.65 d 8.32 8.92 f 19 20 g 10.70 11.1 n 16.50 17.20 p 25 26 r 4 4.09 u 38.50 39.30 v 30 30.30 pin 1 : base pin 2 : emitter case : collector
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