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| inchange semiconductor product specification silicon npn power transistors 2n6676 2n6677 2N6678 description ? with to-3 package ? high voltage capability ? fast switching speeds ? low saturation voltage applications designed for high voltage switching applications such as : ? off-line power supplies ? converter circuits ? pulse width modulated regulators pinning (see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit 2n6676 450 2n6677 550 v cbo collector-base voltage 2N6678 open emitter 650 v 2n6676 300 2n6677 350 v ceo collector-emitter voltage 2N6678 open base 400 v v ebo emitter-base voltage open collector 8 v i c collector current 15 a i cm collector current-peak 20 a i b base current 5 a p t total power dissipation t c =25 ?? 175 w t j junction temperature 200 ?? t stg storage temperature -65~200 ?? fig.1 simplified outline (to-3) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2n6676 2n6677 2N6678 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit 2n6676 300 2n6677 350 v ceo(sus) collector-emitter sustaining voltage 2N6678 i c =0.2a ; i b =0 400 v v cesat collector-emitter saturation voltage i c =15a; i b =3a 1.5 v v besat base-emitter saturation voltage i c =15a; i b =3a 1.5 v i cev collector cut-off current v ce =ratedv cev ;v be(off) =-1.5v t c =100 ?? 0.1 1.0 ma i ebo emitter cut-off current v eb =8v; i c =0 2.0 ma h fe-1 dc current gain i c =1a ; v ce =5v 15 50 h fe -2 dc current gain i c =15a ; v ce =3v 8 c ob output capacitance i e =0 ;v cb =10v;f=0.1mhz 500 pf f t transition frequency i c =1a ; v ce =10v;f=5.0mhz 3 mhz switching times t d delay time 0.2 | s t r rise time 0.6 | s t s storage time 2.5 | s t f fall time i c =15a; i b1 =-i b2 =3.0a v cc =200v; t p =20 | s; duty cycle ? 2.0% v bb =6v,r l =1.35 |? 0.6 | s thermal characteristics symbol parameter max unit r th j-c thermal resistance from junction to case 1.0 ?? /w inchange semiconductor product specification 3 silicon npn power transistors 2n6676 2n6677 2N6678 package outline fig.2 outline dimensions |
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