1 tga4830 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com key features and performance ? dc - 45ghz frequency range ? 13db gain @ 20ghz ? 15db return loss @ 20ghz ? 11.5dbm typical p1db ? 3.2db typical noise figure ? 40gbps data rate ? > 20db gain control ? 0.15 m phemt 3mi technology ? 5v, 50ma bias condition ? chip dimensions: 1.79 x 1.00 x 0.10 mm (0.070 x 0.039 x 0.004 inches) primary applications ? test equipment ? ultra wideband ? ew systems ? fiberoptic systems measured performance v + = 5v, i + = 50ma product description the triquint tga4830 is a medium power wideband low noise amplifier which operates from dc to 45 ghz. typical small signal gain is 13db with >20db agc range. typical input and output return loss is 15db. the tga4830 provides 11.5 dbm of typical output power at 1 db gain compression and a 3.2db noise figure. rf ports are dc coupled enabling the user to customize system corner frequencies. the tga4830 is suitable for a variety of wideband electronic warfare systems such as radar warning receivers, electronic counter measures, decoys, jammers and phased array systems. it is also an excellent choice for 40gb/s nrz applications. the tga4830 is capable of driving an electro-absorptive optical modulator (eam) with electrical non-return to zero (nrz) data. in addition, the tga4830 may also be used as a predriver or a receive gain block. lead free & rohs compliant. wideband low noise amplifier datasheet subject to change without notice
2 tga4830 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com table i maximum ratings symbol parameter 1/ value notes v + v d positive supply voltage biased thru on-chip termination biased thru rf out 10 v 7 v 2/, 3/ i + i d positive supply current biased thru on-chip termination biased thru rf out 72 ma 180m a 3 / p d + p d power dissipation biased thru on-chip termination biased thru rf out 0.7 w 1.26 w 3 / 4 / v g gate voltage range -3v to +1v |i g | gate current 10 ma v ctrl control voltage range +5v to (v d ? v ctrl 8v) 5 / |i ctrl | control current 10 ma p in input continuous wave power 19.2 dbm v in 40gbps prbs voltage input tbd t ch channel temperature 200 c 6 / mounting temperature (30 seconds) 320 c t stg storage temperature -65 to 150 c 1 / these ratings represent the maximum operable values for this device. 2 / assure v d ? v ctrl 8v. compute v d as follows: v d = v + - i + * 40 3 / combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 4 / when operated at this bias condition with a base plate temperature of 70 c, the median life is 2.6e5 hours. 5 / assure v ctrl never exceeds v d during bias up and bias down sequences. also, v ctrl must never exceed 5v during normal operation. 6 / junction operating temperature will directly affect the device mean time to failure (tm). for maximum life it is recommended that junction temperatures be maintained at the lowest possible levels
3 tga4830 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com table ii rf characterization table (t a = 25 c, nominal) (v + = 5v, i + = 50ma) symbol parameter test conditions typ units notes gain small signal gain f = 1 ? 30 ghz 13 db bw small signal 3db bandwidth 45 ghz irl input return loss f = 1 ? 30 ghz 12 db orl output return loss f = 1 ? 30 ghz 15 db p1db output power @ 1db gain compression f = 1 ? 25 ghz 11.5 dbm nf noise figure f = 1 ? 40 ghz 3.2 db note: table ii lists the rf characteristi cs of typical devices as determined by fixtured measurements.
4 tga4830 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com table iii thermal information parameter test conditions t ch ( c) jc ( c/w) tm (hrs) jc thermal resistance (channel to backside of carrier) v + = 5v i + = 50ma p diss = 0.25w t base = 70 c 82.3 49.2 4.2e+7 note: assumes eutectic attach using 1.5mil 80/20 ausn mounted to a 20mil cumo carrier at 70 c baseplate temperature. worst case conditions with no rf applied, 100% of dc power is dissipated. median lifetime (tm) vs. channel temperature
5 tga4830 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com preliminary data v + = 5v, i + = 50ma
6 tga4830 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com preliminary data v + = 5v, i + = 50ma
7 tga4830 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com preliminary data v + = 5v, i + = 60ma, v in = 0.62v pp , v out = 2.25v pp
8 tga4830 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com mechanical drawing
9 tga4830 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com chip assembly & bonding diagram gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. c bypassing effective lower frequency 0 20 mhz 0.01uf 4 mhz 0.1uf 250khz additional biasing information: ? bias conditions: v + = 5.0 v, i + = 50 ma ? adjust vg1 for i + = 50 ma ? adjust vctrl for gain and eye crossing control. vctrl bias is optional. * * * 1800pf & 0.1uf capacitors can be substitut ed with the following integrated capacitors:
10 tga4830 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. reflow process assembly notes: ? use ausn (80/20) solder with limited exposure to temperatures at or above 300 c. (30 seconds maximum) ? an alloy station or conveyor furnace with reducing atmosphere should be used. ? no fluxes should be utilized. ? coefficient of thermal expansion matching is critical for long-term reliability. ? devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: ? vacuum pencils and/or vacuum collets are the preferred method of pick up. ? air bridges must be avoided during placement. ? the force impact is critical during auto placement. ? organic attachment can be used in low-power applications. ? curing should be done in a convection oven; proper exhaust is a safety concern. ? microwave or radiant curing should not be used because of differential heating. ? coefficient of thermal expansion matching is critical. interconnect process assembly notes: ? thermosonic ball bonding is the preferred interconnect technique. ? force, time, and ultrasonics are critical parameters. ? aluminum wire should not be used. ? maximum stage temperature is 200 c. assembly process notes
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