VS-UFB130FA20 www.vishay.com vishay semiconductors revision: 22-jul-13 1 document number: 93606 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 insulated ultrafast rectifier module, 130 a features ? two fully independent diodes ? fully insulated package ? ultrafast, soft reverse recovery, with high operation junction temperature (t j max. = 175 c) ? low forward voltage drop ? optimized for power conversi on: welding and industrial smps applications ? easy to use and parallel ? industry standard outline ? ul approved file e78996 ? designed and qualified for industrial level ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 description the VS-UFB130FA20 insulated modules integrate two state of the art ultrafast recovery rectifiers in the compact, industry standard sot-227 pack age. the diodes structure, and its life time control, provid e an ultrasoft recovery current shape, together with the best overall performance, ruggedness and reliability characteristics. these devices are thus intended for high frequency applications in which the switching energy is designed not to be predominant portion of the total energy, such as in the output rectification stage of welding machines, smps, dc/dc converters. their extrem ely optimized stored charge and low recovery current reduce both over dissipation in the switching elements (and snubbers) and emi/rfi. ? product summary v r 200 v i f(av) per module at t c = 126 c 130 a t rr 32 ns type modules - diode fred pt ? package sot-227 sot-227 absolute maximum ratings parameter symbol test conditions max. units cathode to anode voltage v r 200 v continuous forward current per diode i f t c = 132 c 65 a single pulse forwar d current per diode i fsm t c = 25 c 890 maximum power dissip ation per module p d t c = 132 c 119 w rms isolation voltage v isol any terminal to case, t = 1 minute 2500 v operating junction and storage temperatures t j , t stg - 55 to 175 c
VS-UFB130FA20 www.vishay.com vishay semiconductors revision: 22-jul-13 2 document number: 93606 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 electrical specifications per diode (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units cathode to anode breakdown voltage v br i r = 100 a 200 - - v forward voltage v fm i f = 60 a - 0.96 1.13 i f = 60 a, t j = 175 c - 0.75 0.89 reverse leakage current i rm v r = v r rated - 2 50 a t j = 175 c, v r = v r rated - - 1 ma junction capacitance c t v r = 200 v - 105 - pf dynamic recovery characteristics (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units reverse recovery time t rr i f = 1.0 a, di f /dt = 200 a/s, v r = 30 v - 32 - ns t j = 25 c i f = 50 a ? di f /dt = 200 a/s ? v r = 100 v -42- t j = 125 c - 68 - peak recovery current i rrm t j = 25 c - 4.0 - a t j = 125 c - 9.0 - reverse recovery charge q rr t j = 25 c - 82 - nc t j = 125 c - 295 - thermal - mechanical specifications parameter symbol test conditions min. typ. max. units junction to case, si ngle leg conducting r thjc - - 0.72 c/w junction to case, both leg conducting - - 0.36 case to heatsink r thcs flat, greased surface - 0.10 - weight -30- g mounting torque --1.3nm case style sot-227
VS-UFB130FA20 www.vishay.com vishay semiconductors revision: 22-jul-13 3 document number: 93606 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - typical forward voltage drop characteristics (per leg) fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junction ca pacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics (per diode) 1 10 t j = 175 c t j = 25 c 0 v f - forward voltage drop (v) i f - instantaneous forward current (a) 100 1000 0.5 1.5 2.5 12 0.01 0.1 1 10 100 0 100 150 v r - reverse voltage (v) i r - reverse current (a) 200 50 0.001 1000 t j = 175 c t j = 25 c reverse voltage - v r (v) junction capacitance - c t (pf) 10 100 1000 1 10 100 1000 t j = 25 c z thjc - thermal impedance (c/w) 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 t 1 - rectangular pulse duration (s) dc s ingle pul s e (thermal re s i s tance) p dm t 2 t 1 notes: 1. duty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c
VS-UFB130FA20 www.vishay.com vishay semiconductors revision: 22-jul-13 4 document number: 93606 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - maximum allowable case temperature vs. average forward current (per leg) fig. 6 - forward power loss characteristics (per leg) fig. 7 - typical reverse recovery time vs. di f /dt fig. 8 - typical stored charge vs. di f /dt note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; ? pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); ? pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = 80 % rated v r i f(av) - average forwar d current (a) dc 0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175 200 allowable case temperature ( c) sq uare wave (d = 0.5) rated v r applied i f(av) - average forwar d current (a) average power loss (w) 0 0 102030405060708090100110120 25 50 75 100 125 150 rm s limit d = 0.05 d = 0.10 d = 0.20 d = 0.50 d = 0.33 dc t rr (ns) 0 10 20 30 40 50 60 70 80 t j = 125 c t j = 25 c i f = 50 a v rr = 200 v 100 1000 d i f / d t (a/s) q rr (nc) 0 100 200 300 400 500 600 700 800 0 0 0 1 0 0 1 t j = 125 c t j = 25 c i f = 50 a v rr = 200 v d i f / d t (a/s)
VS-UFB130FA20 www.vishay.com vishay semiconductors revision: 22-jul-13 5 document number: 93606 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 9 - reverse recovery parameter test circuit fig. 10 - reverse recovery waveform and definitions irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adju s t q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve defined by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr
VS-UFB130FA20 www.vishay.com vishay semiconductors revision: 22-jul-13 6 document number: 93606 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table circuit configuration circuit circuit configuration code circuit drawing 2 separate diodes, ? parallel pin-out f links to related documents dimensions www.vishay.com/doc?95423 packaging information www.vishay.com/doc?95425 1 - vishay semiconductors product 2 - ultrafast rectifier 3 - ultrafast pt diffused 4 - current rating (130 = 130 a) 5 - circuit configuration (2 separate diodes, parallel pin-out) 6 - package indicator (sot-227 standard insulated base) - voltage rating (20 = 200 v) 7 device code 5 1 3 2 4 6 7 vs- uf b 130 f a 20 1 43 2 lead a ss ignment 1 4 2 3
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