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inchange semiconductor isc product specification isc silicon npn power transistor 2SC3942 description high collector-emitter breakdown voltage- : v (br)ceo = 300v(min) good linearity of h fe low saturation voltage applications designed for color tv chroma output applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 300 v v ceo collector-emitter voltage 300 v v ebo emitter-base voltage 7 v i c collector current-continuous 0.1 a i cm collector current-peak 0.2 a collector power dissipation @ t c =25 10 p c collector power dissipation @ t a =25 2 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC3942 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)cbo collector-base breakdown voltage i c = 10 a; i e = 0 300 v v (br)ceo collector-emitter breakdown voltage i c = 1ma; i b = 0 b 300 v v (br)ebo emitter-base breakdown vltage i e = 10 a ; i c = 0 7 v v ce( sat ) collector-emitter saturation voltage i c = 30ma; i b = 3ma 1.5 v v be( on ) base-emitter on voltage i c = 30ma ; v ce = 10v 1.2 v i ceo collector cutoff current v ce = 200v; i b = 0 10 a h fe dc current gain i c = 5ma; v ce = 50v 50 250 f t current-gain?bandwidth product i c = 20ma; v ce = 30v 70 mhz c ob output capacitance i e = 0; v cb = 30v, f test = 1mhz 2.7 pf isc website www.iscsemi.cn 2 |
Price & Availability of 2SC3942
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