, u na. 20 stern ave. springfield, new jersey 07081 u.s.a. silicon npn power transistor telephone: (973) 376-2922 (212)227-6005 BDY47 description ? collector-emitter breakdown voltage- : v(br)ceo= 350v(min.) ? dc current gain- : hfe=20(min.)@lc = 2a ? collector-emitter saturation voltage- : vce(sat)= 1.5v(max)@ lc = 15a high switching speed applications ? voltage regulator ? inverter ? switching mode power supply absolute maximum ratings(ta=25c) symbol vcbo vces vceo vebo lc icm ib pc tj tstg parameter collector-base voltage collector-emitter voltage collector-emitter voltage emitter-base voltage collector current-continuous collector current-peak base current collector power dissipation@tcss45c junction temperature storage temperature value 750 750 350 7 15 17 5 95 175 -65-175 unit v v v v a a a w ?c 'c thermal characteristics symbol rth j-c parameter thermal resistance.junction to case max 1.37 unit "cm/ 3 pin i 1.base ?) k 2. bjtter ^s 3. collect or (case) 2 to-3 package v-. f 1 1 1 _4u-dj xxd^4 ^trti ? ^ "ys^ ^/ i (- r / - ? c - m^) mm dm uh max a 3900 6 25.30 c 7.80 d 090 e 1.40 26.6? 8.30 1.10 tfio 6 10.32 h 546 k it 40 l_l 1675 n 19.40 q 4oo u 3000 l v 4.30 13.50 iros 1952 450 3020 450 f 130 - t ' f r 1 nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
silicon npn power transistor BDY47 electrical characteristics tc=25c unless otherwise specified symbol v(br)ceo v(br)cbo v(br)ebo vce(sat) vee(sat) icbo hpe-1 hpe-2 fl parameter collector-emitter breakdown voltage collector-base breakdown voltage emitter-base breakdown voltage collector-emitter saturation voltage base-emitter saturation voltage collector cutoff current dc current gain dc current gain current gain-bandwidth product conditions lc= 200ma; ib= 0 lc=1ma;le=0 ie= 2ma; lc= 0 lc= 15a; ib= 5a lc= 15a; ib= 5a vcb= 750v; ie= 0 vcb= 750v; ie= 0, tc=150'c lc= 2a; vce= 2v lc=10a;vce=2v lc=0.5a; vce=10v min 350 750 7 20 5 10 max 1.5 2.0 0.2 2.5 unit v v v v v ma mhz switching times ton tf toff turn-on time fall time turn-off time lc=5a;lbi=-lb2=1a 0.5 1.0 3.5 ij s n s u s
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