IRFP054N the to-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of to-220 devices. the to-247 is similar but superior to the earlier to-218 package because of its isolated mounting hole. s d g parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 81 ? i d @ t c = 100c continuous drain current, v gs @ 10v 57 a i dm pulsed drain current ?? 290 p d @t c = 25c power dissipation 170 w linear derating factor 1.1 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ?? 360 mj i ar avalanche current ? 43 a e ar repetitive avalanche energy ? 17 mj dv/dt peak diode recovery dv/dt ?? 5.0 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c mounting torque, 6-32 or m3 srew 10 lbf?in (1.1n?m) absolute maximum ratings parameter typ. max. units r q jc junction-to-case CCC 0.90 r q cs case-to-sink, flat, greased surface 0.24 CCC c/w r q ja junction-to-ambient CCC 40 thermal resistance v dss = 55v r ds(on) = 0.012 w i d = 81a ? l advanced process technology l dynamic dv/dt rating l 175c operating temperature l fast switching l fully avalanche rated description to-247ac 2014-8-14 1 www.kersemi.com
IRFP054N parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) CCC CCC showing the i sm pulsed source current integral reverse (body diode) ? CCC CCC p-n junction diode. v sd diode forward voltage CCC CCC 1.3 v t j = 25c, i s = 43a, v gs = 0v ? t rr reverse recovery time CCC 81 120 ns t j = 25c, i f = 43a q rr reverse recoverycharge CCC 240 370 nc di/dt = 100a/s ?? source-drain ratings and characteristics s d g parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 55 CCC CCC v v gs = 0v, i d = 250a d v (br)dss / d t j breakdown voltage temp. coefficient CCC 0.06 CCC v/c reference to 25c, i d = 1ma ? r ds(on) static drain-to-source on-resistance CCC CCC 0.012 w v gs = 10v, i d = 43a ? v gs(th) gate threshold voltage 2.0 CCC 4.0 v v ds = v gs , i d = 250a g fs forward transconductance 30 CCC CCC s v ds = 25v, i d = 43a ? CCC CCC 25 a v ds = 55v, v gs = 0v CCC CCC 250 v ds = 44v, v gs = 0v, t j = 150c gate-to-source forward leakage CCC CCC 100 v gs = 20v gate-to-source reverse leakage CCC CCC -100 na v gs = -20v q g total gate charge CCC CCC 130 i d = 43a q gs gate-to-source charge CCC CCC 23 nc v ds = 44v q gd gate-to-drain ("miller") charge CCC CCC 53 v gs = 10v, see fig. 6 and 13 ?? t d(on) turn-on delay time CCC 11 CCC v dd = 28v t r rise time CCC 66 CCC i d = 43a t d(off) turn-off delay time CCC 40 CCC r g = 3.6 w t f fall time CCC 46 CCC r d = 0.62 w, see fig. 10 ?? between lead, CCC CCC 6mm (0.25in.) from package and center of die contact c iss input capacitance CCC 2900 CCC v gs = 0v c oss output capacitance CCC 880 CCC pf v ds = 25v c rss reverse transfer capacitance CCC 330 CCC ? = 1.0mhz, see fig. 5 ? nh electrical characteristics @ t j = 25c (unless otherwise specified) l d internal drain inductance l s internal source inductance CCC CCC s d g i gss ns 5.0 i dss drain-to-source leakage current ? repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) ? i sd 43a, di/dt 260a/s, v dd v (br)dss , t j 175c notes: ? v dd = 25v, starting t j = 25c, l = 390h r g = 25 w , i as = 43a. (see figure 12) ? pulse width 300s; duty cycle 2%. 81 ? 290 a 13 ? caculated continuous current based on maximum allowable junction temperature;for recommended current-handling of the package refer to design tip # 93-4 ? uses irf1010n data and test conditions 2014-8-14 2 www.kersemi.com
fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 10 100 1000 0.1 1 10 100 i , d rain-to-source current (a ) d v , drain-to-source voltage (v) ds vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 20s pulse w idth t = 25c c a 4.5v 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 j t , junction temperature (c) r , drain-to-sou rce o n r esistan ce ds(on) (n orm alized) v = 10 v gs a i = 72 a d 10 100 1000 0.1 1 10 100 4.5v i , d rain-to-source c urrent (a ) d v , drain-to-source voltage (v) ds vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bott om 4.5v 20s p ulse width t = 175c c a 1 10 100 1000 45678910 t = 25c j gs v , gate-to-source voltage (v) d i , drain-to-s ourc e c urre nt (a ) t = 175c j a v = 2 5 v 20s pulse w idth ds IRFP054N 2014-8-14 3 www.kersemi.com
fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 1000 2000 3000 4000 5000 1 10 100 c, capacitance (pf) ds v , drain-to-source voltage (v) a v = 0 v, f = 1m hz c = c + c , c sho rte d c = c c = c + c gs iss gs gd ds rss gd oss ds gd c is s c oss c rs s 0 4 8 12 16 20 0 20 40 60 80 100 120 140 q , total g ate charge (nc) g v , g ate-to-source vo lta ge (v) gs a for test circuit see fig ure 13 i = 4 3a v = 4 4v v = 2 8v d ds ds 10 100 1000 0.4 0.8 1.2 1.6 2.0 2.4 2.8 t = 25c j v = 0 v gs v , source-to-drain voltage (v) i , reverse drain current (a) sd sd a t = 175c j 1 10 100 1000 1 10 100 v , d rain-to-source voltage (v) ds i , dra in current (a ) operation in this area limited by r d ds(on) 10s 100s 1ms 10ms a t = 2 5c t = 1 75 c sing le p uls e c j IRFP054N 2014-8-14 4 www.kersemi.com
fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 10v + - v dd fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 175 0 20 40 60 80 100 t , case temperature ( c) i , drain current (a) c d limited by package IRFP054N 2014-8-14 5 www.kersemi.com
q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + - 10 v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current 0 200 400 600 800 1000 25 50 75 100 125 150 175 j e , single pulse avalanche energy (m j) as a starting t , junction tem perature (c ) v = 25 v i to p 18 a 3 1a bottom 43a dd d fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 w t p d.u.t l v ds + - v dd driver a 15 v 20v IRFP054N 2014-8-14 6 www.kersemi.com
p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfets * v gs = 5v for logic level devices peak diode recovery dv/dt test circuit ? ? ? r g v dd dv/dt controlled by r g driver same type as d.u.t. i sd controlled by duty factor "d" d.u.t. - device under test d.u.t circuit layout considerations low stray inductance ground plane low leakage inductance current transformer ? * IRFP054N 2014-8-14 7 www.kersemi.com
part number international rectifier log o example : this is an irf1010 w ith assembly l ot co de 9 b1m assembly lot code date code (yyw w ) yy = year ww = week 9246 irf 10 10 9b 1 m a part marking information to-247ac package outline to-247ac outline dimensions are shown in millimeters (inches) lead assign ments notes: - d - 5.30 (.209) 4.70 (.185) 2.50 (.089) 1.50 (.059) 4 3x 0.80 (.031) 0.40 (.016) 2.60 (.102) 2.20 (.087) 3.40 (.133) 3.00 (.118) 3x 0.25 (.010) m ca s 4.30 (.170) 3.70 (.145) - c - 2x 5.50 (.217) 4.50 (.177) 5.50 (.217) 0.25 (.010) 1.40 (.056) 1.00 (.039) 3.65 (.143) 3.55 (.140) d mm b - a - 15.90 (.626) 15.30 (.602) - b - 123 20.30 (.800) 19.70 (.775) 14.80 (.583) 14.20 (.559) 2.40 (.094) 2.00 (.079) 2x 2x 5.45 (.215) 1 dimensioning & tolerancing per an si y14.5m, 1982. 2 controlling dimension : inch. 3 conforms to jedec outline to-247-ac. 1 - gate 2 - drain 3 - source 4 - drain in ter nat io n al rectifier l o g o assembly l o t co d e e xam p le : t his is a n ir fp e3 0 w it h as se mb l y l o t co de 3 a1 q part number date code (y yw w ) yy = year ww week 3a1q 9302 irfpe30 a IRFP054N 2014-8-14 8 www.kersemi.com
|
