RU16P8M4 p-channel advanced power mosfet symbol rating unit v dss -16 v gss 12 t j 150 c t stg -55 to 150 c i s t c =25c -14 a i dp t c =25c -56 a t c =25c -14 t c =100c -9 t a =25c -8 t a =70c -5.6 t c =25c 17.8 t c =100c 7.1 t a =25c 2.5 t a =70c 1.6 ruichips semiconductor co., ltd rev. a? may., 2013 1 www.ruichips.com continuous drain current@t a (v gs =-4.5v) maximum power dissipation@t c maximum power dissipation@t a maximum junction temperature storage temperature range diode continuous forward current 300s pulse drain current tested mounted on large heat sink i d a p d w continuous drain current@t c (v gs =-4.5v) parameter common ratings (t c =25c unless otherwise noted) ? -16v/-8a, r ds (on) =40m(typ.)@v gs =-4.5v r ds (on) =65m(typ.)@v gs =-2.5v ? super high dense cell design ? fast switching speed ? reliable and rugged ? lead free and green devices available (rohs compliant) ? load swtich ? battery charge ? dc/dc converters drain-source voltage v gate-source voltage pin description features applications absolute maximum ratings sdfn2020 p-channel mosfet s g d d d d pin1 d s d s g
RU16P8M4 symbol rating unit r jc 7 c/w r ja 50 c/w e as tbd mj min. typ. max. bv dss drain-source breakdown voltage -16 v -1 t j =125c -30 v gs(th) gate threshold voltage -0.4 -1.1 v i gss gate leakage current 100 na 40 50 p
65 80 p
v sd diode forward voltage -1.2 v t rr reverse recovery time 8 ns q rr reverse recovery charge 3 nc r g gate resistance 0.6
c iss input capacitance 500 c oss output capacitance 90 c rss reverse transfer capacitance 45 t d(on) turn-on delay time 5 t r turn-on rise time 10 t d(off) turn-off delay time 21 t f turn-off fall time 9 q g total gate charge 8 q gs gate-source charge 1.3 q gd gate-drain charge 2.5 ruichips semiconductor co., ltd rev. a? may., 2013 2 www.ruichips.com v gs =0v, i ds =-250a electrical characteristics (t c =25c unless otherwise noted) r ds(on) drain-source on-state resistance v gs =-4.5v, i ds =-4a v ds =v gs , i ds =-250a static characteristics symbol parameter test condition RU16P8M4 unit i dss zero gate voltage drain current v ds =-16v, v gs =0v a parameter thermal resistance-junction to case thermal resistance-junction to ambient avalanche energy, single pulsed drain-source avalanche ratings v gs =0v,v ds =0v,f=1mhz dynamic characteristics v gs =12v, v ds =0v v gs =-2.5v, i ds =-3a diode characteristics i sd =-1a, v gs =0v i sd =-4a, dl sd /dt=100a/s v ds =-12v, v gs =-4.5v, i ds =-4a gate charge characteristics nc ns v gs =0v, v ds =-8v, frequency=1.0mhz pf v dd =-8v,i ds =-4a, v gen =-4.5v,r g
RU16P8M4 notes: device marking package packaging quantity reel size tape width RU16P8M4 16p8 sdfn2020 tape&reel 3000 7'' 8mm ruichips semiconductor co., ltd rev. a? may., 2013 3 www.ruichips.com ordering and marking information pulse width limited by safe operating area. calculated continuous current based on maximum allowable junction temperature. when mounted on 1 inch square copper board, t 10sec. limited by t jmax , starting t j = 25c. pulse test;pulse width 300s, duty cycle 2%. guaranteed by design, not subject to production testing.
RU16P8M4 ruichips semiconductor co., ltd rev. a? may., 2013 4 www.ruichips.com typical characteristics 0 2 4 6 8 10 12 14 16 25 50 75 100 125 150 175 - i d - drain current (a) t j - junction temperature ( c) drain current vgs= - 4.5v 0 50 100 150 200 250 300 0 1 2 3 4 5 6 7 8 9 10 r ds(on) - on - resistance (m ) - v gs - gate - source voltage (v) drain current ids= - 4a 0 2 4 6 8 10 12 14 16 18 20 0 25 50 75 100 125 150 175 p d - power (w) t j - junction temperature ( c) power dissipation 0.01 0.1 1 10 100 0.01 0.1 1 10 100 - i d - drain current (a) - v ds - drain - source voltage (v) safe operation area 10 s 100 s 1ms 10ms dc r ds(on) limited t c =25 c 0.01 0.1 1 10 1e -05 0.0001 0.001 0.01 0.1 1 zthjc - thermal response ( c/w) square wave pulse duration (sec) thermal transient impedance single pulse duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, single pulse r jc = 7 c/w
RU16P8M4 ruichips semiconductor co., ltd rev. a? may., 2013 5 www.ruichips.com typical characteristics 0 10 20 30 40 50 0 1 2 3 4 5 - i d - drain current (a) - v ds - drain - source voltage (v) output characteristics -1v -2v - 2.5v -3v - 4.5v 0 50 100 150 200 0 2 4 6 8 10 r ds(on) - on resistance (m) - i d - drain current (a) drain - source on resistance - 4.5v - 2.5v 0.0 0.5 1.0 1.5 2.0 2.5 - 50 - 25 0 25 50 75 100 125 150 normalized on resistance t j - junction temperature ( c) drain - source on resistance v gs = - 4.5v i ds = -4a t j =25 c rds(on)=40m 0.1 1 10 100 0.2 0.4 0.6 0.8 1 1.2 1.4 - i s - source current (a) - v sd - source - drain voltage (v) source - drain diode forward t j =25 c t j =150 c 0 200 400 600 800 1 10 100 c - capacitance (pf) - v ds - drain - source voltage (v) capacitance ciss coss crss frequency=1.0mhz 0 1 2 3 4 5 6 7 8 9 10 0 2 4 6 8 10 - v gs - gate - source voltage (v) q g - gate charge (nc) gate charge vds= -12v ids= -4a
RU16P8M4 ruichips semiconductor co., ltd rev. a? may., 2013 6 www.ruichips.com avalanche test circuit and waveforms switching time test circuit and waveforms
RU16P8M4 ruichips semiconductor co., ltd rev. a? may., 2013 7 www.ruichips.com package information sdfn2020 d e a a3 a1 k l e1 e2 e b d1 d2 n1 n2 n3 n4 n5 n6 land pattern (only for reference) min nom max min nom max a 0.700 0.750 0.800 0.028 0.030 0.031 a1 0.000 0.025 0.050 0.000 0.001 0.002 a3 d 1.924 2.000 2.076 0.076 0.079 0.082 e 1.924 2.000 2.076 0.076 0.079 0.082 d1 0.800 0.900 1.000 0.031 0.035 0.039 e1 0.850 0.950 1.050 0.033 0.037 0.041 d2 0.200 0.300 0.400 0.008 0.012 0.016 e2 0.460 0.560 0.660 0.018 0.022 0.026 k b 0.250 0.300 0.350 0.010 0.012 0.014 e l 0.174 0.250 0.326 0.007 0.010 0.013 0.650 typ 0.026 typ 0.203 ref. 0.008 ref. symbol mm inch 0.200 min. 0.008 min.
RU16P8M4 ruichips semiconductor co., ltd rev. a? may., 2013 8 www.ruichips.com customer service worldwide sales and service: sales@ruichips.com technical support: technical@ruichips.com investor relations contacts: investor@ruichips.com marcom contact: marcom@ruichips.com editorial contact: editorial@ruichips.comm hr contact: hr@ruichips.com legal contact: legal@ruichips.com shen zhen ruichips semiconductor co., ltd room 501, the 5floor an tong industrial building, no.207 mei hua road fu tian area shen zhen city, china tel: (86 - 755) 8311 - 5334 fax: (86 - 755) 8311 - 4278 e - mail: sales - sz@ruichips.com
|
