WNM2030 single n-channel, 20v, 0.95a, power mosfet descriptions the WNM2030 is n-channel enhancement mos field effect transistor. uses advanced trench technology and design to provide excellent r ds (on) with low gate charge. this device is suitable for use in dc-dc conversion, power switch and charging circuit. standard product WNM2030 is pb-free. features z trench technology z supper high density cell design z excellent on resistance for higher dc current z extremely low threshold voltage z small package sot-723 applications z driver for relay, solenoid, motor, led etc. z dc-dc converter circuit z power switch z load switch z charging pin configuration (top view) marking order information device package shipping WNM2030-3/tr sot-723 8000/reel&tape v ds (v) rds(on) (
) 0.210@ v gs =4.5v 0.250@ v gs =2.5v 20 0.305@ v gs =1.8v esd protected sot-723 2* 2 = device code * = month (a~z) 3 1 2 s d 1 2 3 g 1 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
absolute maximum ratings parameter symbol 10 s steady state unit drain-source voltage v ds 20 gate-source voltage v gs f 6 v t a =25c 0.95 0.88 continuous drain current a t a =70c i d 0.76 0.71 a t a =25c 0.43 0.37 maximum power dissipation a t a =70c p d 0.28 0.24 w t a =25c 0.80 0.75 continuous drain current b t a =70c i d 0.64 0.60 a t a =25c 0.31 0.27 maximum power dissipation b t a =70c p d 0.20 0.17 w pulsed drain current c i dm 1.5 a operating junction temperature t j 150 c lead temperature t l 260 c storage temperature range t stg -55 to 150 c thermal resistance ratings parameter symbol typical maximum unit t ? 10 s 225 285 junction-to-ambient thermal resistance a steady state r ja 270 330 t ? 10 s 330 400 junction-to-ambient thermal resistance b steady state r ja 390 460 junction-to-case thermal resistance steady state r jc 230 265 c/w a surface mounted on fr-4 board using 1 square inch pad size, 1oz copper b surface mounted on fr-4 board using minimum pad size, 1oz copper c pulse width<380s, duty cycle<2% d maximum junction temperature t j =150c. WNM2030 2 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electronics characteristics (ta=25 o c, unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics drain-to-source breakdown voltage bv dss v gs = 0 v, i d = 250ua 20 v zero gate voltage drain current i dss v ds = 16v, v gs = 0v 1 ua gate-to-source leakage current i gss v ds = 0 v, v gs = 5v 5 ua on characteristics gate threshold voltage v gs(th) v gs = v ds , i d = 250ua 0.45 0.65 1.0 v v gs = 4.5v, i d = 0.55a 210 310 v gs = 2.5v, i d = 0.50a 250 360 drain-to-source on-resistance b, c r ds(on) v gs = 1.8v, i d = 0.35a 305 460 m ? capacitances, charges input capacitance c iss 50 output capacitance c oss 13 reverse transfer capacitance c rss v gs = 0 v, f = 100khz, v ds = 10 v 8 pf total gate charge q g(tot) 1.15 threshold gate charge q g(th) 0.06 gate-to-source charge q gs 0.15 gate-to-drain charge q gd v gs = 4.5 v, v ds = 10 v, i d = 0.55a 0.23 nc switching characteristics turn-on delay time td(on) 22 v gs = 4.5 v, rise time tr 80 turn-off delay time td(off) 700 v dd = 10 v, i d =0.55 ? , r g =6 ? 380 fall time tf ns body diode characteristics forward voltage v sd v gs = 0 v, i s = 0.35a 0.5 0.7 1.5 v WNM2030 3 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
typical characteristics (ta=25 o c, unless otherwise noted) output characteristics transfer characteristics 0.0 0.4 0.8 1.2 1.6 2.0 0 1 2 3 4 v gs = 2.5v ~5.0v v gs =2.0v v gs =1.5v i ds -drain-to-source current (a) v ds -drain-to-source voltage(v) 0.0 0.4 0.8 1.2 1.6 2.0 0.0 0.4 0.8 1.2 1.6 2.0 t=-50 o c t=25 o c t=125 o c i ds -drain to source current(a) v gs -gate-to-source voltage(v) v ds =5v on resistance vs. drain current on resistance vs. junction temperature on resistance vs. v gs vs. temperature threshold voltage 0.4 0.8 1.2 1.6 2.0 100 150 200 250 300 350 400 v gs =4.5v v gs =1.8v v gs =2.5v r ds(on) - on-resistance(m ) i ds -drain-to-source current(a) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 400 800 1200 1600 r ds(on) - on-resistance (m ) v gs -gate-to-source voltage(v) -50 -25 0 25 50 75 100 125 150 120 160 200 240 280 320 vgs=4.5v, id=0.55a r ds(on) - on-resistance (m ) temperature( o c) -50 -25 0 25 50 75 100 125 150 0.2 0.3 0.4 0.5 0.6 0.7 0.8 i d =250ua v gs(th) gate threshold voltage (v) temperature ( o c) WNM2030 4 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
capacitance 0246810 0 20 40 60 80 100 120 v gs =0v f=100khz c - capacitance(pf) v ds - drain voltage (v) body diode forward voltage safe operating power gate charge characteristics 0.0 0.4 0.8 1.2 1.6 0 1 2 3 4 v gs =4.5v, v ds =10v,i d =0.55a gate voltage (v) qg (nc) ciss coss crss 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.2 0.4 0.6 0.8 t=25 o c t=150 o c i sd -source to drain current(a) v sd -source-to-drain voltage(v) v ds - drain-to-source voltage (v) 10 0.1 0.1 1 10 100 0.001 1 - drain current (a) i d 0.01 t a = 25 c single pulse 10 ms 100 ms dc 1 s 10 s limited by r ds(on) transient thermal response (junction-to-ambient) 10 -3 10 -2 0 0 6 0 1 1 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (s) normalized effecti ve transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 270 WNM2030 5 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
sot-723 package outline dimensions dimension in millimeters symbol min. max. a 0.500 a1 0.000 0.050 b 0.170 0.270 b1 0.270 0.370 c 0.150 d 1.150 1.250 e 1.150 1.250 e1 0.750 0.850 e 0.800 typ 7 o ref. WNM2030 6 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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