ts4148 ryg 400mw high speed smd switching diode small signal diode ? extremely thin/leadless package ? high mounting capability,strong surage with stand, high reliability. ? pb free version and rohs compliant ? case :0805 standard package, molded plastic min max min max 1.80 2.20 0.071 0.086 1.05 1.45 0. 0 41 0. 0 57 0.25 0.65 0.010 0.026 0.75 0.95 0.0 30 0.037 1.30 0.90 0.051 0.034 package 0805 maximum ratings electrical characteristics reverse breakdown voltage (note 2) forward voltage i f = 10ma v r = 20v v r = 75v junction capacitance v r =0, f=1.0mhz reverse recovery time (note3) notes:1. valid provided that electrodes are kept at ambient temperature notes:2. test condition : i r =100 a notes:3. test condition : i f =10ma, i r =1ma,r l =100
dimensions ordering information part no. packing c e a b na a 300 value 400 5 a units mw v ? halogen free power dissipation symbol 5kpcs / 7" reel ts4148 ry g repetitive peak forward current ? polarity : indicated by cathode band ? weight : 0.006 gram (approximately) i frm non-repetitive peak reverse voltage v rsm rating at 25 c ambient temperature unless otherwise specified. 100 v ? designed for mounting on small surface. non-repetitive peak forward surge current mean forward current 25 1.00 thermal resistance (junction to ambient) (note 1) repetitive peak reverse voltage p d v rrm type number 0805 maximum ratings and electrical characteristics features mechanical data ? terminal: gold plated, solderable per mil-std-750, method 2026 guaranteed unit (mm) unit (inch) d ? high temperature soldering guaranteed: 260 c/10s trr ns - 4.0 c j 4 - i r pf junction and storage temperature range reverse leakage current min -65 to + 175 type number symbol v f c t j , t stg - - v 75 ma ma 0.5 2.0 c/w units v max 375 i o 150 tp=1sec square waveform v (br) i fsm 8.3ms single half sine waveform r ja 75 b a c e d version : g11
ts4148 ryg 400mw high speed smd switching diode small signal diode rating and sharacteristic curves fig 3 admissible power dissipation curve 0 100 200 300 400 500 0 25 50 75 100 125 150 175 200 power dissipation (mw) fig 4 typical junction capacitance 0.6 0.7 0.8 0.9 1 1.1 1.2 0246810 junction capacitance (pf) ambient temperature (c) reverse voltage (v) fig 1 typical forward characteristics 0.01 0.1 1 10 100 1000 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 instantaneous forward current (a) fig 5 forward resistance vs. forward current 1 10 100 1000 10000 0 0 1 10 100 forward current (ma) dynamic forward resistance ( ) ta=25c ta=100 instantaneous forward voltage (v) fig 2 reverse current vs reverse voltage 0.01 0.1 1 10 100 0 20 40 60 80 100 120 reverse current (ua) reverse voltage (v) ta=25c version : g11
|
