technische information / technical information igbt-module igbt-modules fd 600 r 17 kf6c b2 h?chstzul?ssige werte / maximum rated values elektrische eigenschaften / electrical properties kollektor-emitter-sperrspannung collector-emitter voltage v ces 1700 v kollektor-dauergleichstrom t c = 80 c i c,nom. 600 a dc-collector current t c = 25 c i c 975 a periodischer kollektor spitzenstrom repetitive peak collctor current tp = 1 ms, t c =80c i crm 1200 a gesamt-verlustleistung total power dissipation t c =25c, transistor p tot 4,8 kw gate-emitter-spitzenspannung gate-emitter peak voltage v ges +/- 20v v dauergleichstrom dc forward current i f 600 a periodischer spitzenstrom repetitive peak forw. current tp = 1 ms i frm 1200 a grenzlastintegral der diode i 2 t - value, diode v r = 0v, t p = 10ms, t vj = 125c i 2 t 100 ka 2 s isolations-prfspannung insulation test voltage rms, f = 50 hz, t = 1 min. v isol 4kv charakteristische werte / characteristic values transistor / transistor min. typ. max. kollektor-emitter s?ttigungsspannung i c = 600a, v ge = 15v, t vj = 25c v ce sat - 2,6 3,1 v collector-emitter saturation voltage i c = 600a, v ge = 15v, t vj = 125c - 3,1 3,6 v gate-schwellenspannung gate threshold voltage i c = 40ma, v ce = v ge , t vj = 25c v ge(th) 4,5 5,5 6,5 v gateladung gate charge v ge = -15v ... +15v q g - 7,2 - c eingangskapazit?t input capacitance f = 1mhz,t vj = 25c,v ce = 25v, v ge = 0v c ies -40-nf rckwirkungskapazit?t reverse transfer capacitance f = 1mhz,t vj = 25c,v ce = 25v, v ge = 0v c res 2nf kollektor-emitter reststrom v ce = 1700v, v ge = 0v, t vj = 25c i ces - 0,015 1,2 ma collector-emitter cut-off current v ce = 1700v, v ge = 0v, t vj = 125c - 8 60 ma gate-emitter reststrom gate-emitter leakage current v ce = 0v, v ge = 20v, t vj = 25c i ges - - 400 na prepared by: alfons wiesenthal date of publication: 1 8 . 12 .2001 approved by: christoph lbke; 1 8 . 1 2 .2001 revision: 3 (serie s ) 1(8) FD600R17KF6CB2.xls
technische information / technical information igbt-module igbt-modules fd 600 r 17 kf6c b2 charakteristische werte / characteristic values transistor / transistor min. typ. max. einschaltverz?gerungszeit (ind. last) i c = 600a, v ce = 900v turn on delay time (inductive load) v ge = 15v, r g = 2,4 ? , t vj = 25c t d,on - 0,3 - s v ge = 15v, r g = 2,4 ? , t vj = 125c - 0,3 - s anstiegszeit (induktive last) i c = 600a, v ce = 900v rise time (inductive load) v ge = 15v, r g = 2,4 ? , t vj = 25c t r - 0,17 - s v ge = 15v, r g = 2,4 ? , t vj = 125c - 0,17 - s abschaltverz?gerungszeit (ind. last) i c = 600a, v ce = 900v turn off delay time (inductive load) v ge = 15v, r g = 2,4 ? , t vj = 25c t d,off - 1,1 - s v ge = 15v, r g = 2,4 ? , t vj = 125c - 1,1 - s fallzeit (induktive last) i c = 600a, v ce = 900v fall time (inductive load) v ge = 15v, r g = 2,4 ? , t vj = 25c t f - 0,11 - s v ge = 15v, r g = 2,4 ? , t vj = 125c - 0,12 - s einschaltverlustenergie pro puls i c = 600a, v ce = 900v, v ge = 15v turn-on energy loss per pulse r g = 2,4 ? , t vj = 125c, l s = 60nh e on - 270 - mws abschaltverlustenergie pro puls i c = 600a, v ce = 900v, v ge = 15v turn-off energy loss per pulse r g = 2,4 ? , t vj = 125c, l s = 60nh e off - 220 - mws kurzschlu?verhalten t p 10sec, v ge 15v, r g = 2,4 ? sc data t vj 125c, v cc =1000v, v cemax =v ces -l sce di/dt i sc - 2400 - a modulinduktivit?t stray inductance module l sce - 20 - nh modulleitungswiderstand, anschlsse - chip module lead resistance, terminals - chip pro zweig / per arm r cc+ee 0,16 m ? charakteristische werte / characteristic values diode / diode min. typ. max. durchla?spannung i f = 600a, v ge = 0v, t vj = 25c v f - 2,1 2,5 v forward voltage i f = 600a, v ge = 0v, t vj = 125c - 2,1 2,5 v rckstromspitze i f = 600a, - di f /dt = 3500a/sec peak reverse recovery current v r = 900v, vge = -10v, t vj = 25c i rm - 430 - a v r = 900v, vge = -10v, t vj = 125c - 520 - a sperrverz?gerungsladung i f = 600a, - di f /dt = 3500a/sec recovered charge v r = 900v, vge = -10v, t vj = 25c q r - 110 - as v r = 900v, vge = -10v, t vj = 125c - 200 - as abschaltenergie pro puls i f = 600a, - di f /dt = 3500a/sec reverse recovery energy v r = 900v, vge = -10v, t vj = 25c e rec - 60 - mws v r = 900v, vge = -10v, t vj = 125c - 110 - mws 2(8) FD600R17KF6CB2.xls
technische information / technical information igbt-module igbt-modules fd 600 r 17 kf6c b2 thermische eigenschaften / thermal properties min. typ. max. innerer w?rmewiderstand transistor / transistor, dc r thjc - - 0,026 k/w thermal resistance, junction to case diode/diode, dc - - 0,05 k/w bergangs-w?rmewiderstand thermal resistance, case to heatsink pro zweig / per arm pro modul / per module d paste 100m / d g rease 100m r thck r thck - 0,016 0,008 k/w k/w h?chstzul?ssi g e sperrschichttemperatur maximum junction temperature t vj - - 150 c betriebstemperatur operation temperature t op -40 - 125 c lagertemperatur storage temperature t stg -40 - 125 c mechanische eigenschaften / mechanical properties geh?use, siehe anlage case, see appendix innere isolation internal insulation aln kriechstrecke creepage distance 15 mm luftstrecke clearance 10 mm cti comperative tracking index 275 anzugsdrehmoment f. mech. befestigung m1 5 nm mounting torque anzugsdrehmoment f. elektr. anschlsse terminals m4 m2 2 nm terminal connection torque terminals m8 8 - 10 nm gewicht weight g 1050 g mit dieser technischen information werden halbleiterbauelemente spezifiziert, jedoch keine eigenschaften zugesichert. sie gilt in verbindung mit den zugeh?rigen technischen erl?uterungen. this technical information specifies semiconductor devices but promises no characteristics. it is valid in combination with the belonging technical notes. 3(8) FD600R17KF6CB2.xls
technische information / technical information igbt-module igbt-modules fd 600 r 17 kf6c b2 i c [a] v ce [v] i c [a] v ce [v] 0 200 400 600 800 1000 1200 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 tvj = 25c tvj = 125c ausgangskennlinie (typisch) i c = f (v ce ) output characteristic (typical) v ge = 15v 0 200 400 600 800 1000 1200 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 vge = 20v vge = 15v vge = 12v vge = 10v vge = 9v vge = 8v ausgangskennlinienfeld (typisch) i c = f (v ce ) output characteristic (typical) t vj = 125c 4(8) FD600R17KF6CB2.xls
technische information / technical information igbt-module igbt-modules fd 600 r 17 kf6c b2 i c [a] v ge [v] i f [a] v f [v] 0 200 400 600 800 1000 1200 5 6 7 8 9 10 11 12 13 tj = 25c tj = 125c bertragungscharakteristik (typisch) i c = f (v ge ) transfer characteristic (typical) v ce = 20v 0 200 400 600 800 1000 1200 0,0 0,5 1,0 1,5 2,0 2,5 3,0 tvj = 25c tvj = 125c durchla?kennlinie der inversdiode (typisch) i f = f (v f ) forward characteristic of inverse diode (typical) 5(8) FD600R17KF6CB2.xls
technische information / technical information igbt-module igbt-modules fd 600 r 17 kf6c b2 e [mj] i c [a] e [mj] r g [ ? ? ? ? ] 0 100 200 300 400 500 600 700 800 0 200 400 600 800 1000 1200 eon eoff erec schaltverluste (typisch) e on = f (i c ) , e off = f (i c ) , e rec = f (i c ) switching losses (typical) r gon = r goff =2,4 ? ? ? ? , v ce = 900v, t j = 125c 0 200 400 600 800 1000 1200 048121620 eon eoff erec schaltverluste (typisch) e on = f (r g ) , e off = f (r g ) , e rec = f (r g ) switching losses (typical) i c = 600a , v ce = 900v , t j = 125c 6(8) FD600R17KF6CB2.xls
technische information / technical information igbt-module igbt-modules fd 600 r 17 kf6c b2 z thjc [k / w] t [sec] i 1234 r i [k/kw] : igbt 2,5 12,3 5,2 6 i [sec] : igbt 0,003 0,05 0,1 0,95 r i [k/kw] : diode 4,92 26,8 9,14 9,14 i [sec] : diode 0,003 0,045 0,45 0,75 i c [a] v ce [v] sicherer arbeitsbereich (rbsoa) reverse bias safe operation area ( rbsoa ) r g = 2,4 ohm, t vj = 125c transienter w?rmewiderstand z thjc = f (t) transient thermal impedance 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 1400 1600 1800 ic,modul ic,chip 0,001 0,01 0,1 0,001 0,01 0,1 1 10 100 zth:diode zth:igbt 7 (8) FD600R17KF6CB2.xls
technische information / technical information igbt-module igbt-modules f d 600r17kf6c b2 ?u?ere abmessungen / external dimensions 11,5 8 (8) fd 60 0 r1 7 k f6c b2 .xls
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