irfp4127pbf hexfet ? power mosfet d s g to-247ac g d s gate drain source application ? ? high efficiency synchronous rectification in smps ? ? uninterruptible power supply ?? high speed power switching ? ? hard switched and high frequency circuits benefits ? ? improved gate, avalanche and dynamic dv/dt ruggedness ? ? fully characterized capacitance and avalanche soa ? ? enhanced body diode dv/dt and di/dt capability ? ? lead-free, rohs compliant base part number package type standard pack orderable part number form quantity irfp4127pbf to-247ac tube 25 irfp4127pbf v dss 200v r ds(on) typ. 17m ?? max 21m ?? i d 75a parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 75 a i d @ t c = 100c continuous drain current, v gs @ 10v 53 i dm pulsed drain current ?? 300 p d @t c = 25c maximum power dissipation 341 w linear derating factor 2.3 w/c v gs gate-to-source voltage 20 v dv/dt peak diode recovery dv/dt ?? 57 v/ns t j t stg operating junction and storage temperature range -55 to + 175 ? soldering temperature, for 10 seconds (1.6mm from case) 300 mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) ? avalanche characteristics ? e as (thermally limited) single pulse avalanche energy ?? 244 ? mj thermal resistance ? parameter typ. max. units r ? jc junction-to-case ?? ??? 0.4 c/w r ? cs case-to-sink, flat greased surface 0.24 ??? r ? ja junction-to-ambient ??? ??? 40 c ? s g d ? 1 www.irf.com ? 2015 international rectifier submit datasheet feedback march 09, 2015
? irfp4127pbf 2 www.irf.com ? 2015 international rectifier submit datasheet feedback march 09, 2015 static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 200 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.23 ??? v/c reference to 25c, i d = 5ma r ds(on) static drain-to-source on-resistance ??? 17 21 m ?? v gs = 10v, i d = 44a ?? v gs(th) gate threshold voltage 3.0 ??? 5.0 v v ds = v gs , i d = 250a i dss drain-to-source leakage current ??? ??? 20 a v ds = 200 v, v gs = 0v ??? ??? 250 v ds =200v,v gs = 0v,t j =125c i gss gate-to-source forward leakage ??? ??? 100 na v gs = 20v gate-to-source reverse leakage ??? ??? -100 v gs = -20v r g gate resistance ??? 3.0 ??? ?? dynamic electrical characteristics @ t j = 25c (unless otherwise specified) gfs forward transconductance 45 ??? ??? s v ds = 50v, i d =44a q g total gate charge ??? 100 150 nc ? i d = 44a q gs gate-to-source charge ??? 30 ??? v ds = 100v q sync total gate charge sync. (q g - q gd ) ??? 69 ??? i d = 44a, v ds =0v, v gs = 10v t d(on) turn-on delay time ??? 17 ??? ns v dd = 100v t r rise time ??? 18 ??? i d = 44a t d(off) turn-off delay time ??? 56 ??? r g = 2.7 ?? t f fall time ??? 22 ??? v gs = 10v c iss input capacitance ??? 5380 ??? pf ? v gs = 0v c oss output capacitance ??? 410 ??? v ds = 50v c rss reverse transfer capacitance ??? 86 ??? ? = 1.0mhz c oss eff.(er) effective output capacitance (energy related) ??? 360 ??? v gs = 0v, vds = 0v to 160v ? see fig.11 c oss eff.(tr) output capacitance (time related) ??? 590 ??? v gs = 0v, vds = 0v to 160v ? diode characteristics ? parameter min. typ. max. units conditions i s continuous source current ??? ??? 75 a mosfet symbol (body diode) ? showing the i sm pulsed source current ??? ??? 300 integral reverse (body diode) ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25c,i s = 44a,v gs = 0v ?? t rr reverse recovery time ??? 136 ??? ns t j = 25c v dd = 100v ??? 139 ??? t j = 125c i f = 44a, q rr reverse recovery charge ??? 458 ??? nc t j = 25c di/dt = 100a/s ??? ??? 688 ??? t j = 125c ? i rrm reverse recovery current ??? 8.3 ??? a t j = 25c ? q gd gate-to-drain charge ??? 31 ??? v gs = 10v d s g notes: ? ? repetitive rating; pulse width limited by max. junction temperature. ? recommended max eas limit, starting t j = 25c, l = 0.25mh, r g = 25 ? , i as = 44a, v gs =10v. ? i sd ??? 4a, di/dt ?????a/s, v dd ?? v (br)dss , t j ? 175c. ? pulse width ?? 400s; duty cycle ? 2%. ? c oss eff. (tr) is a fixed capacitance that gives the same c harging time as c oss while v ds is rising from 0 to 80% v dss . ? c oss eff. (er) is a fixed capacitance t hat gives the same energy as c oss while v ds is rising from 0 to 80% v dss . ? when mounted on 1" square pcb (fr-4 or g-10 material). for recommended footprint and soldering techniques refer to application note #an-994 ? r ?? is measured at t j approximately 90c
? irfp4127pbf 3 www.irf.com ? 2015 international rectifier submit datasheet feedback march 09, 2015 fig 1. typical output characteristics fig 4. normalized on-resistance vs. temperature fig 5. typical capacitance vs. drain-to-source voltage fig 6. typical gate charge vs . gate-to-source voltage fig 3. typical transfer characteristics fig 2. typical output characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) ? 60s pulse width tj = 25c 4.5v vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) ? 60s pulse width tj = 175c 4.5v vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 3.0 4.0 5.0 6.0 7.0 8.0 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ? ? ) v ds = 50v ? 60s pulse width t j = 25c t j = 175c -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 44a v gs = 10v 1 10 100 v ds , drain-to-source voltage (v) 0 2000 4000 6000 8000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 20 40 60 80 100 120 q g total gate charge (nc) 0 4 8 12 16 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 160v v ds = 100v v ds = 40v i d = 44a
? irfp4127pbf 4 www.irf.com ? 2015 international rectifier submit datasheet feedback march 09, 2015 fig 8. maximum safe operating area fig 11. typical c oss stored energy fig 10. drain-to?source breakdown voltage fig 7. typical source-drain diode forward voltage 3.0 4.0 5.0 6.0 7.0 8.0 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ? ? ) v ds = 50v ? 60s pulse width t j = 25c t j = 175c -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , temperature ( c ) 180 200 220 240 260 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e ( v ) id = 5ma 0 40 80 120 160 200 v ds, drain-to-source voltage (v) 0.0 2.0 4.0 6.0 8.0 e n e r g y ( j ) fig 9. maximum drain current vs. case temperature fig 12. maximum avalanche energy vs. drain current 25 50 75 100 125 150 175 t c , casetemperature (c) 0 20 40 60 80 i d , d r a i n c u r r e n t ( a ) 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 200 400 600 800 1000 1200 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 7.7a 12.6a bottom 44a 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 10msec 1msec 100sec dc operation in this area limited by rds(on)
? irfp4127pbf 5 www.irf.com ? 2015 international rectifier submit datasheet feedback march 09, 2015 fig 13. maximum effective transient thermal impedance, junction-to-case fig 15. maximum avalanche energy vs. temperature fig 14. typical avalanche current vs. pulse width 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 t h e r ma l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) ? i (sec) ? 0.02 0.000019 0.08333 0.000078 0.181667 0.001716 0.11333 0.008764 ? j ? j ? 1 ? 1 ? 2 ? 2 ? 3 ? 3 r 1 r 1 r 2 r 2 r 3 r 3 ci= ? i ? ri ci= ? i ? ri ? c ? c ? 4 ? 4 r 4 r 4 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 50 100 150 200 250 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1% duty cycle i d = 44a 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 tav (sec) 0.1 1 10 100 a v a l a n c h e c u r r e n t ( a ) allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 150c. allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 150c and tstart = 25c (single pulse)
? irfp4127pbf 6 www.irf.com ? 2015 international rectifier submit datasheet feedback march 09, 2015 fig 18. typical recovery current vs. dif/dt fig 19. typical stored charge vs. dif/dt fig 20. typical stored charge vs. dif/dt 100 200 300 400 500 600 700 800 900 1000 di f / dt - (a / s) 0 500 1000 1500 2000 2500 3000 q r r - ( n c ) i f = 44a v r = 100v t j = 125c t j = 25c 100 200 300 400 500 600 700 800 900 1000 di f / dt - (a / s) 0 500 1000 1500 2000 2500 3000 q r r - ( n c ) i f = 29a v r = 100v t j = 125c t j = 25c 100 200 300 400 500 600 700 800 900 1000 di f / dt - (a / s) 0 10 20 30 40 50 60 i r r m - ( a ) i f = 44a v r = 100v t j = 125c t j = 25c 100 200 300 400 500 600 700 800 900 1000 di f / dt - (a / s) 0 10 20 30 40 50 i r r m - ( a ) i f = 29a v r = 100v t j = 125c t j = 25c fig 17. typical recovery current vs. dif/dt fig 16. threshold voltage vs. temperature -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 1.0 2.0 3.0 4.0 5.0 6.0 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 1.0a i d = 1.0ma i d = 250a
? irfp4127pbf 7 www.irf.com ? 2015 international rectifier submit datasheet feedback march 09, 2015 fig 21. peak diode recovery dv/dt test circuit for n-channel hexfet ? power mosfets fig 22a. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 23a. switching time test circuit fig 24a. gate charge test circuit t p v (br)dss i as fig 22b. unclamped inductive waveforms fig 23b. switching time waveforms vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 24b. gate charge waveform
? irfp4127pbf 8 www.irf.com ? 2015 international rectifier submit datasheet feedback march 09, 2015 note: for the most current drawing please refer to ir website at http://www.irf.com/package/ to-247ac package outline dimensions are shown in millimeters (inches) to-247ac part marking information to-247ac package is not recommended for surface mount application. 2x c "a" "a" e e2/ 2 q e2 2x l1 l d a e 2x b2 3x b lead tip see vi ew "b" b4 b a ? . 010 b a a2 a1 ? .010 b a d1 s e1 thermal pad -a- ? p ? .010 b a vi ew : "b" section: c- c, d-d, e-e (b, b2, b4) (c) base meta l plati ng vi ew : "a" - "a" year 1 = 2001 date code part number international logo rectifier assembly 56 57 irfpe30 135h line h indicates "lead-free" week 35 lot code in the assembly line "h" assembled on ww 35, 2001 notes: this part marking information applies to devices produced after 02/26/2001 note: "p" in assembly line position example: with assembly this is an irfpe30 lot code 5657
? irfp4127pbf 9 www.irf.com ? 2015 international rectifier submit datasheet feedback march 09, 2015 qualification information ? ? qualification level ? industrial (per jedec jesd47f) ?? moisture sensitivity level to-247ac n/a rohs compliant yes ? qualification standards can be found at international rectifier?s web site: h ttp://www.irf.com/product-info/reliability/ ?? applicable version of jedec standar d at the time of product release. data and specifications subject to change without notice. ir world headquarters: 101n sepulveda., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information .
|
