? semiconductor components industries, llc, 2008 august, 2008 ? rev. 4 1 publication order number: n tf2955/d ntf2955, NTF2955P power mosfet ? 60 v, ? 2.6 a, single p ? channel sot ? 223 features ? tmos7 design for low r ds(on) ? withstands high energy in avalanche and commutation modes ? pb ? free packages are available applications ? power supplies ? pwm motor control ? converters ? power management maximum ratings (t j = 25 c unless otherwise noted) parameter symbol value unit drain ? to ? source voltage v dss ? 60 v gate ? to ? source voltage v gs 20 v continuous drain current (note 1) steady state t a = 25 c i d ? 2.6 a t a = 85 c ? 2.0 power dissipation (note 1) steady state t a = 25 c p d 2.3 w continuous drain current (note 2) steady state t a = 25 c i d ? 1.7 a t a = 85 c ? 1.3 power dissipation (note 2) t a = 25 c p d 1.0 w pulsed drain current tp = 10 s i dm ? 17 a operating junction and storage temperature t j , t stg ? 55 to 175 c single pulse drain ? to ? source avalanche energy (v dd = 25 v, v g = 10 v, i pk = 6.7 a, l = 10 mh, r g = 25 ) eas 225 mj lead temperature for soldering purposes (1/8? from case for 10 seconds) t l 260 c thermal resistance ratings parameter symbol max unit junction ? to ? tab (drain) ? steady state (note 2) r jc 14 c/w junction ? to ? ambient ? steady state (note 1) r ja 65 junction ? to ? ambient ? steady state (note 2) r ja 150 stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. when surface mounted to an fr4 board using 1 in. pad size (cu. area = 1.127 in 2 [1 oz] including traces) 2. when surface mounted to an fr4 board using the minimum recommended pad size (cu. area = 0.341 in 2 ) http://onsemi.com d s g p ? channel ? 60 v 145 m @ ? 10 v r ds(on) typ ? 2.6 a i d max v (br)dss 1 2 3 4 sot ? 223 case 318e style 3 marking diagrams and pin assignment 3 source 2 drain 1 gate 4 drain device package shipping ? ordering information ntf2955t1 sot ? 223 1000/tape & reel ntf2955t1g sot ? 223 (pb ? free) 1000/tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. ayw 2955 a = assembly location y = year w = work week = pb ? free package (note: microdot may be in either location) 3 source 2 drain 1 gate 4 drain ayw 2955p NTF2955Pt1g sot ? 223 (pb ? free) 1000/tape & reel
ntf2955, NTF2955P http://onsemi.com 2 electrical characteristics (t j =25 c unless otherwise stated) parameter symbol test condition min typ max unit off characteristics drain ? to ? source breakdown voltage v (br)dss v gs = 0 v, i d = ? 250 a ? 60 v drain ? to ? source breakdown voltage temperature coefficient v (br)dss /t j 66.4 mv/ c zero gate voltage drain current i dss v gs = 0 v, v ds = ? 60 v t j = 25 c ? 1.0 a t j = 125 c ? 50 gate ? to ? source leakage current i gss v ds = 0 v, v gs = 20 v 100 na on characteristics (note 3) gate threshold voltage v gs(th) v gs = v ds , i d = ? 1.0 ma ? 2.0 ? 4.0 v drain ? to ? source on resistance r ds(on) v gs = ? 10 v, i d = ? 0.75 a 145 170 m v gs = ? 10 v, i d = ? 1.5 a 150 180 v gs = ? 10 v, i d = ? 2.4 a 154 185 forward transconductance g fs v gs = ? 15 v, i d = ? 0.75 a 1.77 s charges and capacitances input capacitance c iss v gs = 0 v, f = 1.0 mhz, v ds = 25 v 492 pf output capacitance c oss 165 reverse transfer capacitance c rss 50 total gate charge q g(tot) v gs = 10 v, v ds = 30 v, i d = 1.5 a 14.3 nc threshold gate charge q g(th) 1.2 gate ? to ? source charge q gs 2.3 gate ? to ? drain charge q gd 5.2 switching characteristics (note 4) turn ? on delay time t d(on) v gs = 10 v, v dd = 25 v, i d = 1.5 a, r g = 9.1 r l = 25 11 ns rise time t r 7.6 turn ? off delay time t d(off) 65 fall time t f 38 drain ? source diode characteristics forward diode voltage v sd v gs = 0 v, i s = 1.5 a t j = 25 c ? 1.10 ? 1.30 v t j = 125 c ? 0.9 reverse recovery time t rr v gs = 0 v, di s /dt = 100 a/ s, i s = 1.5 a 36 ns charge time t a 20 discharge time t b 16 reverse recovery charge q rr 0.139 nc 3. pulse test: pulse width 300 s, duty cycle 2%. 4. switching characteristics are independent of operating junction temperatures.
ntf2955, NTF2955P http://onsemi.com 3 typical performance curves (t j = 25 c unless otherwise noted) 0 10 2 4 6 8 figure 1. on ? region characteristics figure 2. transfer characteristics figure 3. on ? resistance versus drain current and temperature figure 4. on ? resistance versus drain current and gate voltage figure 5. on ? resistance variation with temperature figure 6. drain ? to ? source leakage current versus voltage ? v gs, gate ? to ? source voltage (volts) ? i d, drain current (amps) t j = 25 c t j = 125 c t j = ? 55 c 0 0.4 0.3 0.2 0 10 6 ? i d, drain current (amps) r ds(on), drain ? to ? source resistance ( ) ? i d, drain current (amps) r ds(on), drain ? to ? source resistance ( ) v gs = ? 15 v 1.8 1.6 1.4 t j , junction temperature ( c) r ds(on), drain ? to ? source resistance (normalized) ? 50 50 25 0 ? 25 75 125 100 i d = ? 1.5 a v gs = ? 10 v 0.8 0 150 10 1000 ? v ds, drain ? to ? source voltage (volts) ? i dss , leakage (na) 54060 30 20 10 50 100 8 2 0 2 10 2 1 ? v ds, drain ? to ? source voltage (volts) ? i d, drain current (amps) 0 10 v gs = ? 10 v v gs = ? 3.8 v v gs = ? 4.5 v v gs = ? 5 v 6 210 8 46 0.1 1.2 4 0 0.25 0.2 0.175 0.15 0.125 0.05 10 8 6 0.1 0.075 2 1 v gs = ? 10 v to ? 7 v t j = 150 c t j = 25 c t j = 25 c t j = 125 c t j = ? 55 c v ds 10 v v gs = 0 v 8 3 44 t j = 125 c 0.225 2 v gs = ? 6 v v gs = ? 10 v 0.2 0.4 0.6 45 35 25 15 55 456789 v gs = ? 5.5 v t j = 25 c
ntf2955, NTF2955P http://onsemi.com 4 typical performance curves (t j = 25 c unless otherwise noted) 10 10 15 5 020 525 r ds(on) limit ? v gs 100 1 0.01 1000 10 1 12 4 2 0 100 50 0 5 0 1000 800 gate ? to ? source or drain ? to ? source voltage (volts) c, capacitance (pf) 600 400 q g , total gate charge (nc) figure 7. capacitance variation figure 8. gate ? to ? source and drain ? to ? source voltage versus total charge v gs , gate ? to ? source voltage (volts) figure 9. resistive switching time variation versus gate resistance r g , gate resistance ( ) figure 10. diode forward voltage versus current ? v sd , source ? to ? drain voltage (volts) ? i s , source current (amps) t, time (ns) figure 11. maximum rated forward biased safe operating area ? v ds , drain ? to ? source voltage (volts) figure 12. maximum avalanche energy versus starting junction temperature t j , starting junction temperature ( c) ? i d , drain current (amps) e as , single pulse drain ? to ? source avalanche energy (mj) 010 8 416 1 10 100 0 0.5 0.25 0.1 10 100 1 25 125 150 100 75 175 50 i d = ? 1.5 a t j = 25 c v gs v gs = 0 v v ds = 0 v t j = 25 c c rss c iss c oss c rss 1 0.75 1 c iss v gs = ? 20 v single pulse t c = 25 c v dd = ? 25 v i d = ? 1.5 a v gs = ? 10 v v gs = 0 v t j = 25 c i pk = ? 6.7 a 1 ms 100 s 10 ms dc t r t d(off) t d(on) ? v ds 1.75 150 200 250 q gd q t 0 6 2 t f thermal limit package limit 200 1200 6 10 8 10 2 1.25 1.5 100 3 4 10 s 14 12 60 20 10 0 30 40 50 v ds , drain ? to ? source voltage (volts) q gs v ds 0.1
ntf2955, NTF2955P http://onsemi.com 5 package dimensions style 3: pin 1. gate 2. drain 3. source 4. drain sot ? 223 (to ? 261) case 318e ? 04 issue m a1 b1 d e b e e1 4 123 0.08 (0003) a l1 c notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. h e dim a min nom max min millimeters 1.50 1.63 1.75 0.060 inches a1 0.02 0.06 0.10 0.001 b 0.60 0.75 0.89 0.024 b1 2.90 3.06 3.20 0.115 c 0.24 0.29 0.35 0.009 d 6.30 6.50 6.70 0.249 e 3.30 3.50 3.70 0.130 e 2.20 2.30 2.40 0.087 0.85 0.94 1.05 0.033 0.064 0.068 0.002 0.004 0.030 0.035 0.121 0.126 0.012 0.014 0.256 0.263 0.138 0.145 0.091 0.094 0.037 0.041 nom max l1 1.50 1.75 2.00 0.060 6.70 7.00 7.30 0.264 0.069 0.078 0.276 0.287 h e ? ? e1 0 1 0 0 1 0 1.5 0.059 mm inches scale 6:1 3.8 0.15 2.0 0.079 6.3 0.248 2.3 0.091 2.3 0.091 2.0 0.079 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. ntf2955/d publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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