 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| inchange semiconductor product specification silicon npn power transistors 2N5490 2n5492 2n5494 2n5496 description ? with to-220 package ? high power dissipation applications ? for used in medium power and amplifier applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit 2N5490/5494 60 2n5492 75 v cbo collector-base voltage 2n5496 open emitter 90 v 2N5490/5494 40 2n5492 55 v ceo collector-emitter voltage 2n5496 open base 70 v v ebo emitter-base voltage open collector 5 v i c collector current 7 a i b base current 3 a p t total power dissipation t c =25 ?? 50 w t j junction temperature 150 ?? t stg storage temperature -65~150 ?? thermal characteristics symbol parameter max unit r th j-c thermal resistance from junction to case 2.5 ??/w
inchange semiconductor product specification 2 silicon npn power transistors 2N5490 2n5492 2n5494 2n5496 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit 2N5490/5494 40 2n5492 55 v ceo(sus) collector-emitter sustioning voltage 2n5496 i c =0.1a ;i b =0 70 v 2N5490 i c =2.0a;i b =0.2a 2n5492 i c =2.5a;i b =0.25a 2n5494 i c =3.0a;i b =0.3a v cesat collector-emitter saturation voltage 2n5496 i c =3.5a;i b =0.35a 1.0 v 2N5490 i c =2.0a ; v ce =4v 1.1 2n5492 i c =2.5a ; v ce =4v 1.3 2n5494 i c =3.0a ; v ce =4v 1.5 v be base-emitter on voltage 2n5496 i c =3.5a ; v ce =4v 1.7 v 2n5492 v ce =70v;v be =1.5v 2N5490/5494 v ce =55v;v be =1.5v i cev collector cut-off current 2n5496 v ce =85v;v be =1.5v 1.0 ma i cer collector cut-off current v ce =rated v ceo ;r be =100 |? 0.5 ma i ebo emitter cut-off current v eb =5v; i c =0 1.0 ma 2N5490 i c =2.0a ; v ce =4v 2n5492 i c =2.5a ; v ce =4v 2n5494 i c =3.0a ; v ce =4v h fe dc current gain 2n5496 i c =3.5a ; v ce =4v 20 100 f t transition frequency i c =0.5a ; v ce =4v 0.8 mhz inchange semiconductor product specification 3 silicon npn power transistors 2N5490 2n5492 2n5494 2n5496 package outline fig.2 outline dimensions(unindicated tolerance: ? 0.10 mm) |
Price & Availability of 2N5490
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |