? auirfn8459 hexfet? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress rati ngs only; and functional operation of the device at these or any other condition beyond those indicat ed in the specifications is not implied. exposure to absolute- maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratin gs are measured under board mounted and still air conditions. ambient temper ature (ta) is 25c, unless otherwise specified. automotive grade ? dual pqfn 5x6 mm g d s gate drain source ? parameter max. units i d @ t c (bottom) = 25c continuous drain current, v gs @ 10v ? 70 a i d @ t c (bottom) = 100c continuous drain current, v gs @ 10v 50 i dm pulsed drain current ? 320 p d @t c (bottom) = 25c power dissipation 50 w linear derating factor 0.33 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy (thermally limited) ? 66 mj e as (tested) single pulse avalanche energy ? 110 i ar avalanche current ? see fig. 14, 15, 22a, 22b a e ar repetitive avalanche energy ?? t j operating junction and -55 to + 175 c ? t stg storage temperature range i d @ t c (bottom) = 25c continuous drain current, v gs @ 10v (package limited) 50 1 www.irf.com ? 2014 international rectifier submit datasheet feedback july 29, 2014 base part number package type standard pack orderable part number ?? form quantity ? auirfn8459 dual pqfn 5mm x 6mm tape and reel 4000 AUIRFN8459TR description specifically designed for automotive applications, this hexfet ? power mosfet utilizes the late st processing techniques to achieve extremely low on-resistan ce per silicon area. additional features of this design are a 175c junction operating temperature, fast swithcing speed and improved repetitive avalanche rating. these features combine to ma ke this product an extremely efficient and reliable device for use in automotive and wide variety of other applications. applications ? 12v automotive systems ? brushed dc motor ? braking ? transmission features ? advanced process technology ? dual n-channel mosfet ? ultra low on-resistance ? 175c operating temperature ? fast switching ? repetitive avalanche allowed up to tjmax ? lead-free, rohs compliant ? automotive qualified * v dss 40v r ds(on) typ. 4.8m ?? max 5.9m ?? i d (silicon limited) 70a ? i d (package limited) 50a
? auirfn8459 2 www.irf.com ? 2014 international rectifier submit datasheet feedback july 29, 2014 static electrical characteristics @ t j = 25c (unless otherwise specified) ? symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 40 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.037 ??? v/c reference to 25c, i d = 1.0ma r ds(on) static drain-to-source on-resistance ??? 4.8 5.9 m ?? v gs = 10v, i d = 40a ? v gs(th) gate threshold voltage 2.2 3.0 3.9 v v ds = v gs , i d = 50a gfs forward transconductance 66 ??? ??? s v ds = 10v, i d = 40a r g internal gate resistance ??? 1.9 ??? ?? i dss drain-to-source leakage current ??? ??? 1.0 a v ds = 40v, v gs = 0v ??? ??? 150 v ds = 40v, v gs = 0v, t j = 125c i gss gate-to-source forward leakage ??? ??? 100 na v gs = 20v gate-to-source reverse leakage ??? ??? -100 v gs = -20v dynamic electrical characteristics @ t j = 25c (unless otherwise specified) ? symbol parameter min. typ. max. units conditions q g total gate charge ??? 40 60 nc i d = 40a q gs gate-to-source charge ??? 13 ??? v ds = 20v q gd gate-to-drain ("miller" ) charge ??? 14 ??? v gs = 10v q sync total gate charge sync. (q g - q gd ) ??? 26 ??? i d = 40a, v ds =0v, v gs = 10v t d(on) turn-on delay time ??? 10 ??? ns v dd = 26v t r rise time ??? 55 ??? i d = 40a t d(off) turn-off delay time ??? 25 ??? r g = 2.7 ? t f fall time ??? 42 ??? v gs = 10v c iss input capacitance ??? 2250 ??? pf v gs = 0v c oss output capacitance ??? 340 ??? v ds = 25v c rss reverse transfer capacitance ??? 215 ??? ? = 1.0 mhz c oss eff. (er) effective output capacita nce (energy related) ??? 400 ??? v gs = 0v, v ds = 0v to 32v ? c oss eff. (tr) effective output capacita nce (time related) ??? 490 ??? v gs = 0v, v ds = 0v to 32v ? diode characteristics ??? ? symbol parameter min. typ. max. units conditions i s continuous source current ??? ??? 70 ? a mosfet symbol (body diode) showing the i sm pulsed source current ??? ??? 320 a integral reverse (body diode) ? p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25c, i s = 40a, v gs = 0v ? dv/dt peak diode recovery ? ??? 7.0 ??? v/ns t j = 175c, i s = 40a, v ds = 40v t rr ? reverse recovery time ??? 22 ??? ns t j = 25c ??? 23 ??? t j = 125c q rr reverse recovery charge ??? 17 ??? nc t j = 25c ??? 17 ??? t j = 125c i rrm reverse recovery current ??? 1.0 ??? a t j = 25c v r = 34v, i f = 40a di/dt = 100a/s ? symbol parameter typ. max. units r ? jc (bottom) junction-to-case ? ??? 3.0 c/w r ? jc (top) junction-to-case ? ??? 45 r ? ja junction-to-ambient ? ??? 105 r ? ja (<10s) junction-to-ambient ? ??? 80 thermal resistance
? auirfn8459 3 www.irf.com ? 2014 international rectifier submit datasheet feedback july 29, 2014 fig. 2 typical output characteristics fig. 3 typical transfer characteristics fig. 1 typical output characteristics fig 5. typical capacitance vs. drain-to-source voltage fig. 4 normalized on-resistance vs. temperature fig 6. typical gate charge vs. gate-to-source voltage 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) ? 60s pulse width tj = 25c 4.3v vgs top 15v 10v 8.0v 7.0v 6.0v 5.0v 4.5v bottom 4.3v 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) ? 60s pulse width tj = 175c 4.3v vgs top 15v 10v 8.0v 7.0v 6.0v 5.0v 4.5v bottom 4.3v 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) v ds = 10v ? 60s pulse width t j = 25c t j = 175c -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 40a v gs = 10v 0 102030405060 q g total gate charge (nc) 0 2 4 6 8 10 12 14 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 32v v ds = 20v v ds= 8.0v i d = 40a
? auirfn8459 4 www.irf.com ? 2014 international rectifier submit datasheet feedback july 29, 2014 fig 8. maximum safe operating area fig. 7 typical source-to-drain diode fig 9. maximum drain current vs. case temperature fig 10. drain-to?source breakdown voltage fig 11. typical c oss stored energy 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a in c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , temperature ( c ) 40 42 44 46 48 50 v ( b r ) d s s , d r a in - t o - s o u r c e b r e a k d o w n v o lt a g e ( v ) id = 1.0ma fig 12. typical on-resista nce vs. drain current 0 50 100 150 200 i d , drain current (a) 4.0 8.0 12.0 16.0 20.0 r d s ( o n ) , d r a in - t o - s o u r c e o n r e s i s t a n c e ( m ? ) v gs = 5.5v v gs = 6.0v v gs = 7.0v v gs = 8.0v v gs = 10v 0 10 20 30 40 v ds, drain-to-source voltage (v) 0.00 0.05 0.10 0.15 0.20 0.25 0.30 e n e r g y ( j ) 0.1 1 10 100 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec 100sec dc l imited by package operation in this area limited by r ds (on) 25 50 75 100 125 150 175 t c , case temperature (c) 0 10 20 30 40 50 60 70 i d , d r a i n c u r r e n t ( a ) limited by package
? auirfn8459 5 www.irf.com ? 2014 international rectifier submit datasheet feedback july 29, 2014 fig 13. maximum effective transient thermal impedance, junction-to-case fig 15. maximum avalanche energy vs. temperature fig 14. avalanche current vs. pulse width current notes on repetitive avalanche curves , figures 14, 15: (for further info, see an-1005 at www.irf.com) 1.avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 22a, 22b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 14, 15). t av = average time in avalanche. d = duty cycle in avalanche = tav f z thjc (d, t av ) = transient thermal resistance, see figures 13) pd (ave) = 1/2 ( 1.3bvi av ) = ? t/ z thjc i av = 2 ? t/ [1.3bvz th ] e as (ar) = p d (ave) t av ?? 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.01 0.1 1 10 100 a v a l a n c h e c u r r e n t ( a ) allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 125c. allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 150c and tstart =25c (single pulse) 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r ma l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 10 20 30 40 50 60 70 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1.0% duty cycle i d = 40a
? auirfn8459 6 www.irf.com ? 2014 international rectifier submit datasheet feedback july 29, 2014 fig 16. typical on-resistance vs. gate voltage fig 17. threshold voltage vs. temperature fig 21. typical stored charge vs. dif/dt fig 19. typical stored charge vs. dif/dt fig 18. typical recovery current vs. dif/dt fig 20. typical recovery current vs. dif/dt 4 8 12 16 20 v gs , gate-to-source voltage (v) 0 5 10 15 20 25 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) t j = 25c t j = 125c i d = 40a -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 50a i d = 250a i d = 1.0ma i d = 1.0a 0 100 200 300 400 500 600 di f /dt (a/s) 0 1 2 3 4 5 i r r m ( a ) i f = 40a v r = 34v t j = 25c t j = 125c 0 100 200 300 400 500 600 di f /dt (a/s) 0 1 2 3 4 5 i r r m ( a ) i f = 26a v r = 34v t j = 25c t j = 125c 0 100 200 300 400 500 600 di f /dt (a/s) 0 10 20 30 40 50 60 70 80 90 q r r ( n c ) i f = 40a v r = 34v t j = 25c t j = 125c 0 100 200 300 400 500 600 di f /dt (a/s) 0 10 20 30 40 50 60 70 80 90 q r r ( n c ) i f = 26a v r = 34v t j = 25c t j = 125c
? auirfn8459 7 www.irf.com ? 2014 international rectifier submit datasheet feedback july 29, 2014 ? fig 22. peak diode recovery dv/dt test circuit for n-channel hexfet? power mosfets fig 22a. unclamped inductive test circuit fig 22b. unclamped inductive waveforms fig 23a. switching time test circuit fig 23b. switching time waveforms fig 24a. gate charge test circuit fig 24b. gate charge waveform vdd ?
? auirfn8459 8 www.irf.com ? 2014 international rectifier submit datasheet feedback july 29, 2014 dual pqfn 5x6 package details note: for the most current drawing please refer to ir website at http://www.irf.com/package/ for more information on board mounting, including footprint and stencil recommendation, please refer to application note an-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf for more information on package inspection techniques, please refer to application note an-1154: http://www.irf.com/technical-info/appnotes/an-1154.pdf dual pqfn 5x6 part marking xxxx xywwx xxxxx international rectifier logo part number (?4 or 5 digits?) marking code (per marking spec) assembly site code (per scop 200-002) date code pin 1 identifier lot code (eng mode - min last 4 digits of eati#) (prod mode - 4 digits of spn code)
? auirfn8459 9 www.irf.com ? 2014 international rectifier submit datasheet feedback july 29, 2014 ? notes: ? repetitive rating; pulse width limited by max. junction temperature. ? limited by t jmax , starting t j = 25c, l =75h, r g = 50 ? , i as = 40a, v gs = 10v. ? ? i sd ? 50a, di/dt ? 650a/s, v dd ? v (br)dss , t j ? 175c. ? pulse width ? 400s; duty cycle ?? 2%. ? c oss eff. (tr) is a fixed capacitance that gives the same charging time as coss while v ds is rising from 0 to 80% v dss . ? c oss eff. (er) is a fixed capacitance that gives the same energy as coss while v ds is rising from 0 to 80% v dss . ? when mounted on 1" square pcb (fr-4 or g-10 material). for recommended footprint and soldering techniques refer to application note #an-994 : http://www.irf.com/technical-info/appnotes/an-994.pdf ? r ? is measured at t j of approximately 90c. ? this value determined from sample failure population, starting t j = 25c, l= 75h, r g = 50 ? , i as = 40a, v gs =10v. ?? calculated continuous current based on maximum allowable ju nction temperature. bond wire current limit is 50a. note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements ? qualification standards can be foun d at international rectifier?s web site: http//www.irf.com/ ?? highest passing voltage. qualification information ? ? qualification level automotive (per aec-q101) comments: this part number(s) passed au tomotive qualification. ir?s in- dustrial and consumer qualification leve l is granted by extension of the high- er automotive level. moisture sensitivity level dual pqfn 5mm x 6mm msl1 esd human body model class h1b(+/- 1000v) ?? aec-q101-001 charged device model class c5 (+/- 1000v) ?? aec-q101-005 rohs compliant yes
? auirfn8459 10 www.irf.com ? 2014 international rectifier submit datasheet feedback july 29, 2014 important notice unless specifically designated for the automotive market, internatio nal rectifier corporation and it s subsidiaries (ir) reserve the right to make corrections, modifi cations, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. part numbers designated with the ?au? prefix follow automotive industry and / or customer specific requirement s with regards to product discontinuance and process change notification. all products are sold subject to ir?s terms and c onditions of sale supplied at the time of order acknowledgment. ir warrants performance of its hardware products to the specificat ions applicable at the time of sale in accordance with ir?s standard warranty. testing and other qualit y control techniques are used to the extent ir deems necessary to support this warranty. except where mandated by government requirements, te sting of all parameters of each product is not necessarily performed. ir assumes no liability for applications assistance or customer product design. customers are responsible for their products and applications using ir components. to minimize the risks with customer prod ucts and applications, customers should provide adequate design and operating safeguards. reproduction of ir information in ir data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations , and notices. reproduction of this information with altera- tions is an unfair and deceptive business practice. ir is not re sponsible or liable for such altered documentation. infor- mation of third parties may be subject to additional restrictions. resale of ir products or serviced with statements different from or beyond the parameters stated by ir for that product or service voids all express and any implied warranties for the associated ir product or service and is an unfair and deceptive business practice. ir is not responsible or liable for any such statements. ir products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the ir product could create a situation where personal injury or death may occur. should buyer purchase or use ir products for any such unintended or unauthorized application, buyer shall indem nify and hold international rectifier and its officers, em- ployees, subsidiaries, affiliates, and di stributors harmless against a ll claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any clai m of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ir was neg ligent regarding the design or manufacture of the product. only products certified as military grade by the defense logistics agency (dla) of the us department of defense, are de- signed and manufactured to meet dla military specifications required by certain m ilitary, aerospace or other applications. buyers acknowledge and agree that any use of ir products not certified by dla as military-grade, in applications requiring military grade products, is solely at the bu yer?s own risk and that they are solely re sponsible for compliance with all legal a nd regulatory requirements in connection with such use. ir products are neither designed nor intended for use in autom otive applications or environments unless the specific ir products are designated by ir as compliant with iso/ts 16949 requirements and bear a part number including the designa- tion ?au?. buyers acknowledge and agree that, if they use any non-designated products in automotive applications, ir will not be responsible for any failure to meet such requirements. for technical support, please contact ir?s technical assistance center http://www.irf.com/technical-info/ world headquarters: 101 n. sepulveda blvd., el segundo, california 90245 tel: (310) 252-7105
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