creat by art - glass passivated junction chip - ideal for automated placement - low profile package - built-in strain rellef - super fast recovery time for high efficiency - halogen-free according to iec 61249-2-21 definition molding compound, ul flammability classification rating 94v-0 base p/n with suffix "g" on packing code - green compound (halogen-free) base p/n with prefix "h" on packing code - aec-q101 qualified terminal: matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 1a whisker test with prefix "h" on packing code meet jesd 201 class 2 whisker test v rrm 50 100 150 200 300 400 500 600 v v rms 35 70 105 140 210 280 350 420 v v dc 50 100 150 200 300 400 500 600 v i f(av) a trr ns cj pf t j o c t stg o c document number: ds_d1407006 version: i14 note 2: reverse recovery test conditions: i f =0.5a, i r =1.0a, i rr =0.25a note 3: measured at 1 mhz and applied v r =4.0 volts note 1: pulse test with pw=300 s, 1% duty cycle do-214ac (sma) 0.95 1.3 1.7 10 350 typical junction capacitance (note 3) 25 20 o c/w operating junction temperature range storage temperature range - 55 to +150 - 55 to +150 maximum reverse recovery time (note 2) 35 typical thermal resistance r jl r ja 20 75 v maximum reverse current @ rated vr t j =25 o c t j =125 o c i r a peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load i fsm 50 a maximum instantaneous forward voltage (note 1) @ 2 a v f es 2ja unit maximum repetitive peak reverse voltage maximum rms voltage maximum dc blocking voltage maximum average forward rectified current 2 maximum ratings and electrical characteristics (t a =25 o c unless otherwise noted) parameter symbol es 2aa es 2ba es 2ca es 2da es 2fa es 2ga es 2ha - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec mechanical data case: do-214ac (sma) polarity: indicated by cathode band weight: 0.06 g (approximately) es2aa thru es2j a taiwan semiconductor surface mount su p er fast rectifiers features - moisture sensitivity level: level 1, per j-std-020
part no. part no. es2ja es2ja es2ja (ta=25 o c unless otherwise noted) document number: ds_d1407006 version: i14 es2jahr3 h r3 aec-q101 qualified ratings and characteristics curves es2ja r3 r3 es2ja r3g r3 g green compound note 1: "xx" defines voltage from 50v (es2aa) to 600v (es2ja) example preferred p/n aec-q101 qualified packing code green compound code description f4 folded sma 7,500 / 13" plastic reel n/a e3 clip sma 1,800 / 7" plastic reel e2 clip sma 7,500 / 13" plastic reel sma 7,500 / 13" plastic reel f3 folded sma 1,800 / 7" plastic reel f2 folded sma 7,500 / 13" paper reel es2xa (note 1) prefix "h" r3 suffix "g" sma 1,800 / 7" plastic reel r2 sma 7,500 / 13" paper reel m2 es2aa thru es2j a taiwan semiconductor ordering information aec-q101 qualified packing code green compound code package packing 0 1 2 3 80 90 100 110 120 130 140 150 average forward current (a) lead temperature ( o c) fig.1 maximum forward current derating curve resister or inductive load 0 10 20 30 40 50 60 110100 peak forward surge current (a) number of cycles at 60 hz fig. 3 maximum non-repetitive peak forward surge current 8.3ms single half sine wave 0.01 0.1 1 10 100 1000 0 20 40 60 80 100 120 140 instantaneous reverse current ( a) percent of rated peak reverse voltage (%) fig. 2 typical reverse characteristics t j =25 o c t j =125 o c t j =75 o c 0.01 0.1 1 10 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 instantaneous forward current (a) forward voltage (v) fig. 4 typical instantaneous forward characteristics es2ha-2ja pulse width=300 s 1% duty cycle es2fa-2ga es2aa-2da
min max min max a 1.27 1.58 0.050 0.062 b 4.06 4.60 0.160 0.181 c 2.29 2.83 0.090 0.111 d 1.99 2.50 0.078 0.098 e 0.90 1.41 0.035 0.056 f 4.95 5.33 0.195 0.210 g 0.10 0.20 0.004 0.008 h 0.15 0.31 0.006 0.012 p/n = specific device code g = green compound yw = date code f = factory code document number: ds_d1407006 version: i14 marking diagram do-214ac (sma) d 2.41 0.095 e 5.45 0.215 b 1.52 0.060 c 3.93 0.155 suggested pad layout symbol unit (mm) unit (inch) a 1.68 0.066 es2aa thru es2j a taiwan semiconductor package outline dimensions dim. unit (mm) unit (inch) 0 10 20 30 40 50 60 0.1 1 10 100 junction capacitance (pf) reverse voltage (v) fig. 5 typical junction capacitance es2aa-da es2fa-ja f=1.0mhz vsig=50mvp-p
creat by art assumes no responsibility or liability for any errors inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied,to any intellectual property rights is granted by this document. except as provided in tsc's terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale. document number: ds_d1407006 version: i14 es2aa thru es2j a taiwan semiconductor notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf,
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