mixers - double-balanced - chip 4 4 - 2 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com hmc128 gaas mmic double-balanced mixer, 1.8 - 5.0 ghz v03.1007 general description features functional diagram conversion loss: 7 db lo to rf and if isolation: >36 db input ip3: +18 dbm no dc bias required die size: 1.45 x 1.45 x 0.1 mm electrical specifi cations, t a = +25 c, lo drive = +15 dbm* typical applications the hmc128 is a miniature double-balanced mixer chip that can be used as an upconverter or downcon- verter. the device is a passive diode/balun type mixer with high dynamic range. noise fi gure is essentially equal to the conversion loss. the mixer can handle larger signal levels than active mixers due to the high third order intercept. mmic implementation provides exceptional balance in the circuit resulting in high lo/ rf and lo/if isolations. this mixer can operate over a wide lo drive input of +9 to +15 dbm. the hmc128 is ideal for: ? microwave & vsat radios ? test equipment ? military ew, ecm, c 3 i ? space telecom parameter min. typ. max. units frequency range, rf & lo 1.8 - 5.0 ghz frequency range, if dc - 3 ghz conversion loss 710db noise figure (ssb) 710db lo to rf isolation 35 42 db lo to if isolation 27 36 db ip3 (input) 15 18 dbm ip2 (input) 45 50 dbm 1 db gain compression (input) 5 10 dbm * unless otherwise noted, all measurements performed as downconverter, if = 100 mhz
mixers - double-balanced - chip 4 4 - 3 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com conversion gain vs. lo drive conversion gain vs . temperature @ lo = +15 dbm isolation @ lo = +15 dbm lo and rf return loss if bandwidth @ lo = +15 dbm upconverter performance conversion gain vs. lo drive -20 -15 -10 -5 0 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 +25 c +85 c -55 c conversion gain (db) frequency (ghz) -20 -15 -10 -5 0 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 rf lo frequency (ghz) return loss (db) -20 -15 -10 -5 0 012345 if conversion loss if return loss frequency (ghz) response (db) -20 -15 -10 -5 0 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 + 9 dbm + 11 dbm + 13 dbm + 15 dbm frequency (ghz) conversion gain (db) -20 -15 -10 -5 0 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 +9 dbm +11 dbm +13 dbm +15 dbm conversion gain (db) frequency (ghz) -60 -50 -40 -30 -20 -10 0 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 rf/if lo/rf lo/if isolation (db) frequency (ghz) hmc128 v03.1007 gaas mmic double-balanced mixer, 1.8 - 5.0 ghz
mixers - double-balanced - chip 4 4 - 4 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com input ip2 vs lo drive input ip3 vs. lo drive input ip3 vs. temperature @ lo = +15 dbm input ip2 vs. temperature @ lo = +15 dbm input p1db vs. temperature @ lo = +15 dbm harmonics of lo nlo spur @ rf port lo freq. (ghz) 1 2 3 4 1.5 54 42 54 54 2.0 48 41 50 66 2.5 47 41 44 76 3.5 40 50 52 75 4.5 40 60 51 65 5.5 38 60 46 63 lo = +13 dbm all values in dbc below input lo level measured at rf port. 10 15 20 25 30 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 +11 dbm +13 dbm +15 dbm ip3 (dbm) frequency (ghz) 40 45 50 55 60 65 70 75 80 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 +25 c +85 c -55 c ip2 (dbm) frequency (ghz) 40 45 50 55 60 65 70 75 80 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 + 11 dbm + 13 dbm + 15 dbm ip2 (dbm) frequency (ghz) 10 15 20 25 30 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 + 25 c + 85 c - 55 c ip3 (dbm) frequency (ghz) 7 8 9 10 11 12 13 14 15 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 + 25 c + 85 c - 55 c p1db (dbm) frequency (ghz) hmc128 v03.1007 gaas mmic double-balanced mixer, 1.8 - 5.0 ghz
mixers - double-balanced - chip 4 4 - 5 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com absolute maximum ratings lo drive +27 dbm storage temperature -65 to +150 c operating temperature -55 to +85 c mxn spurious @ if port nlo mrf01234 0xx5.630.311.134.5 12.8023.331.529.1 262.358.657.860.375.8 3 74.3 >85 74.3 65.8 74.3 4 >85 >85 >85 >85 >85 rf freq.= 3.5 ghz @ -10 dbm lo freq.= 3.4 ghz @ +13 dbm all values in dbc below if power level. measured as downconverter electrostatic sensitive device observe handling precautions notes: 1. all dimensions are in inches [mm] 2. bond pads are .004 square 3. typical bond pad spacing center to center is .006 .1 except as shown 4. die thickness = .004 [.100 mm] 5. backside metalization: gold 6. backside metal is ground 7. bond pad metalization: gold outline drawing die packaging information [1] standard alternate wp-3 (waffle pack) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation. hmc128 v03.1007 gaas mmic double-balanced mixer, 1.8 - 5.0 ghz
mixers - double-balanced - chip 4 4 - 6 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com pad number function description interface schematic 1 lo this pin is dc coupled and matched to 50 ohms. 2if this pin is dc coupled. for applications not requiring oper- ation to dc, this port should be dc blocked externally using a series capacitor whose value has been chosen to pass the necessary if frequency range. for operation to dc this pin must not source or sink more than 2ma of current or die non-function and possible die failure will result. 3 rf this pin is dc coupled and matched to 50 ohms. gnd the backside of the die must connect to rf ground. pad descriptions hmc128 v03.1007 gaas mmic double-balanced mixer, 1.8 - 5.0 ghz
mixers - double-balanced - chip 4 4 - 7 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com assembly diagram handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either waffle or gel based esd protective containers, and then sealed in an esd protective bag for shipment. once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: handle the chips in a clean environment. do not attempt to clean the chip using liquid cleaning systems. static sensitivity: follow esd precautions to protect against esd strikes. transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick-up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fi ngers. mounting the chip is back-metallized and can be die mounted with ausn eutectic preforms or with electrically conductive epoxy. the mount ing surface should be clean and fl at. eutectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. do not expose the chip to a temperature greater than 320 c for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fi llet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire. thermosonic wirebonding with a nominal stage temperature o f 150 c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. use the minimum level of ultrasonic energy to achieve reliable wirebonds. wirebonds should be started on the chip and terminated on the package or substrate. all bonds should be as short as possible <0.31 mm (12 mils). hmc128 v03.1007 gaas mmic double-balanced mixer, 1.8 - 5.0 ghz
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