tsm 4 n60e 6 0 0v, 4 a , 2.5 n - channel power mosfet 1 /7 version: a14 to - 251 (ipak) to - 252 (dpak) key parameter performance parameter value unit v ds 6 00 v r ds(on) (max) 2.5 q g ( typ ) 1 3 nc features 100% avalanche tested g - s esd protection diode embedded block diagram n - channel mosfet wit h esd protection ordering information part no. package packing tsm 4 n60e c h c5 g to - 2 5 1 75 pcs / tube tsm 4 n60e c p rog to - 2 52 2.5kpcs / 13 reel note: g denotes for halogen - and antimony - free as those which contain <900ppm bromine, <900ppm chlorine (<1500p pm total br + cl) and <1000ppm antimony compounds absolute maximum rating s ( t c = 25 o c unless otherwise noted ) parameter symbol limit unit drain - source voltage v ds 600 v gate - source voltage v gs 3 0 v continuous drain current (note 1 ) t c =25 i d 4 a t c = 100 2.34 a pulsed drain current (note 2 ) i dm 16 a repetitive avalanche current (note 1 ) i a r 4 a repetitive avalanche energy (note 1 ) e a r 8.62 mj single pulse avalanche energy (note 3 ) e as 192 mj total power dissipation @ t c = 25 p d 86.2 w derate above t c = 25 0.68 w/ peak diode recovery d v /dt (note 4 ) d v /dt 4 . 5 v/ns operating junction temperature t j 150 storage temperature range t stg - 55 to +150 thermal performance parameter symbol limit unit thermal resistance - juncti on to case r ? jc 1.45 /w thermal resistance - junction to ambient r ? ja 110 /w pin definition : 1. gate 2. drain 3. source
tsm 4 n60e 6 0 0v, 4 a , 2.5 ? n - channel power mosfet 2 /7 version: a14 electrical specifications ( t c = 25 o c unless otherwise noted ) parameter conditions symbol min typ max u nit static (note 5 ) drain - source breakdown voltage v gs = 0 v, i d = 250 a bv dss 600 -- -- v drain - source on - state resistance v gs = 10v, i d = 2 a r ds(on) -- 2 2.5 ? gate threshold voltage v ds = v gs , i d = 250a v gs(th) 3 -- 5 v zero gate voltage drain current v ds = 60 0v, v gs = 0v i dss -- -- 1 a v ds = 480 v, t j = 125 ! -- -- 10 gate body leakage v gs = 3 0v, v ds = 0v i gss -- -- 100 a forward transconductance v ds = 3 0v, i d = 2 a g fs -- 6 -- s dynamic (note 6 ) total gate charge v ds = 480 v, i d = 4 a, v gs = 10 v q g -- 1 2 -- nc gate - source charge q gs -- 3 -- gate - drain ch arge q gd -- 6 -- input capacitance v ds = 25 v, v gs = 0v, f = 1mhz c iss -- 54 5 -- pf output capacitance c oss -- 61 -- reverse transfer capacitance c rss -- 1 0 -- switching (note 7 ) turn - on delay time v dd = 300 v , v gs = 10v, r g = 25 w , i d = 4 a t d(on) -- 1 8 -- ns turn - on rise time t r -- 2 7 -- turn - off delay time t d(off) -- 4 7 -- turn - off fall time t f -- 21 -- source - drain diode ratings and characteristic (note 5 ) maximum continuous drain - source diode forward current i s -- -- 4 a maximum pul se drain - source diode forward current i s m -- -- 16 a diode - source forward voltage v gs = 0v , i s = 4 a v sd -- -- 1 .5 v reverse recovery time v gs = 0v , i s = 4 a di f /dt = 100a/s t rr -- 316 -- ns reverse recovery charge q rr -- 1.2 -- n c notes: 1. current limi ted by package 2. pulse width limited by the m aximum junction temperature 3. v dd = 5 0 v, l= 22mh , i as = 4 a , r g = 25 w , starting t j = 25 ? ?? ? ? ? ?? ? ????W ? ??? ? ? ?? ? ? ? ? ??b|PNLN ? ? ?? ?? ??{ ? {v?? ? ? ?? ?? Q??v? ? ? ? ?? ? ?`???????????o?@? ?o???b?L? ? ?? ? ZJ??QB?AMQ?p?aaaH?O?gX?H?`?`?v?H`? ? ? ? ? ? ? ?
tsm 4 n60e 6 0 0v, 4 a , 2.5 ? n - channel power mosfet 3 /7 version: a14 electrical characteristics curves ( t c = 2 5 o c , unless otherwise noted ) output characteristics transfer characteristics on - resistance vs. drain current gate charge on - resistance vs. junction temperature source - drain diode forward voltage
tsm 4 n60e 6 0 0v, 4 a , 2.5 ? n - channel power mosfet 4 /7 version: a14 electrical characteristics curve ( t c = 25 o c , unless otherwise noted ) drain current vs. case temperature bv dss vs. junction temperature threshold volta ge vs. junction temperature capacitance vs. drain - source voltage maximum safe operating area normalized transient impedance
tsm 4 n60e 6 0 0v, 4 a , 2.5 ? n - channel power mosfet 5 /7 version: a14 to - 251 mechanical drawing unit: millimeters marking diagram y = year code m = month code for halogen free product ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =nov, z =dec) l = lot code
tsm 4 n60e 6 0 0v, 4 a , 2.5 ? n - channel power mosfet 6 /7 version: a14 to - 252 mechanical drawing unit: millimeters marking diagram y = year code m = month code for halogen free product ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =nov, z =dec) l = lot code
tsm 4 n60e 6 0 0v, 4 a , 2.5 ? n - channel power mosfet 7 /7 version: a14 notice specifications of the products displayed herein are subject to change wit hout notice. tsc or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property r ights is granted by this document. except as provided in tsc s terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liabili ty or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life - saving, or life - sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale.
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