algaas invisible laser diode ADL-80Y01TX/tz 2004/ 05 ver . 1. 0 ?1 808nm 200mw 5.6 p t o -t ype h i g h powe r la ser diode ? ? ? f e a t ur es 1. s t anda rd 5.6 p t o -type: e a sy for de sig n , assembly and integ r atio n 2. low o peratio n curre n t 3. long o peratio n lifetime, mttf>1 000 0 hrs 4. co st ef fective a pplica t io ns 1. pump s for sol i d st ate la sers 2. miniature low powe r green lase r 3. medical use absolute maximum r a tings tx tz p a r a m e t e r s y m b o l conditio n ratin g unit light output p o we r p o c w 2 0 0 mw reverse volta ge (l d) v rl - 2 v ca se tempe r ature t c - -10 ~ + 5 0 o c storage temp eratu r e t s - -40 ~ + 7 5 o c ? electrica l and optical c har acteristics (t c =2 5 o c) p a r a m e t e r s y mbol m i n . t y p . m a x . u n i t conditio n s peak wavele ngth f 8 0 5 8 0 8 81 1 n m p o =200mw thre sh old current i th - 5 5 7 5 m a operating current i op - 2 6 0 2 8 0 m a p o =200mw operating vol t age v op - 1 . 7 1 . 9 v p o =200mw dif f erential ef f i cien cy b 0 . 8 1 - m w / m a p o =150-200 mw parallel dive rgen ce an gle c // - 9 1 5 d e g r e e perpe ndi cula r diverg en ce angle c ?? - 4 1 4 8 d e g r e e emissi on poi nt accura cy g x g y g z - - ? 80 um p o =200mw p r ecaut i ons 1. d o not op er ate th e d e v i ce ab ov e the max i mu m r a ti ng co ndi ti o n , ev en m o m e n t ar i l y . it m a y cause un ex pecte d p e r m an ent da m a g e to the dev i ce. 2. semi c ond uctor l a ser d e v i ce i s v e ry sensi t i v e to el ec tr ost a ti c di sc har g e . h i g h v o l t ag e spi k e cur r e nt m a y chang e t h e ch ar acte ristics o f t h e dev i ce, or m a l f uncti o n at any time d u ring i t s ser v i c e per i od. th er e f or e, pr op er m eas ur es f o r pr ev enti n g el ectr ost a ti c di sch ar g e ar e s t r ong l y r e comme nd ed. 3. ef fecti v e he at si nk can hel p the dev i c e o per at es un der a m o r e r e l a x condi ti o n ; as a r e s u l t, a m o r e s t abl e ch ar acte r i sti cs an d be tt e r re lia bility ca n b e a c h i e v e d . s o it is r e com m e nde d t hat al w a y s appl y pr oper h eat si nk be for e t he dev i ce i s oper a t i n g . 4. d o not l ook i n to the l a s e r bea m di r e ctl y by bar e ey es. t h e l a ser b e a m may caus e sev e r e dam a g e to hu m an ey es.
algaas invisible laser diode ADL-80Y01TX/tz 2004/ 05 ver . 1. 0 0 5 0 100 150 200 250 300 350 400 0 50 100 150 200 250 300 50 o c 40 o c 30 o c 20 o c 10 o c l - i cur ve vs . temper at u r e o p ti cal pow e r (m w) o p e r ati on cu r r ent (ma) 10 20 30 40 50 0 20 40 60 80 100 t h r esho l d cur r e n t vs . case t e m p erat ur e thre s hol d curr ent (m a ) case temper at u r e (d e g r ee) 1 0 20 30 40 50 0.8 0.9 1.0 1.1 1.2 d i f f er ential e f ficien cy vs . c a se tem p er ature di f f er en t i al ef f i ci e n c y ( m w/ ma) ca se tem p er at ur e ( d eg r e e) 10 20 3 0 40 50 780 790 800 810 820 830 o s c illation w a v e l e n gth v s . c a se te m p er atur e os ci ll at ion wavel engt h ( n m) c a s e t e m p eratu r e ( d eg ree ) -30 - 2 0 -10 0 1 0 20 30 p o w e r dependence of far fiel d pat t er n p o = 200 mw po = 1 50mw po = 100mw po = 50m w intensity a ngle (degr e e ) 790 7 9 5 8 00 805 81 0 815 820 0 2 000 4 000 6 000 8 000 1 0000 1 2000 p o w e r d e p e nd ence of w avel e n g t h o sci l l at i o n w a vel en g t h ( n m ) inten s ity
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