c2\.w j. t u nc. 20 stern ave. springfield, new jersey 07081 usa. silicon npn power transistor telephone: (973) 376-2922 (212)227-6005 BUY56 description ? collector-emitter breakdown voltage- :v(br)ceo=160v(min.) ? low collector saturation voltage- :vce(sat)=1.5v@lc=7a applications ? designed for general switching applications at higher outputs. absolute maximum ratings(ta=25'c) symbol vcbo vces vceo vebo ic icm ib pc tj tstg parameter collector-base voltage collector-emitter voltage collector-emitter voltage emitter-base voltage collector current-continuous collector current-peak base current-continuous collector power dissipation @tc=75"c junction temperature storage temperature range max 250 250 160 6 10 15 2 60 175 -65~175 unit v v v v a a a w ?c 'c thermal characteristics symbol rth j-c parameter max thermal resistance, junction to case 1 .66 unit c/w 3 2 x pin 1.b/we 2. emitter 3. collect or (case) to-3 package a i t-e v~\ t p-t i ? il ?*? u .?"?ja *-$ ^t tfn vr v_p dm a b : <; 0 e 0 h j5 1 l 1 n 1 0 u v '-1 t ?j c s'v "\ / * ? <$ c -/ h nun un max 3900 >s.3l 26.67 ?.? 8.30 0.90 1.10 1 .40 1 .60 1092 546 t40 13.50 675 17.05 940 19.62 4.00 4.20 3000 3020 4.30 4.50 ! ?bh t t > b ' j nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
silicon npn power transistor BUY56 electrical characteristics tc=25c unless otherwise specified symbol v(br)ceo v(br)cbo v(br)ebo vce(sat) vee(on) icbo ices iebo hpe-1 llfe-2 fl cob parameter collector-emitter breakdown voltage collector-base breakdown voltage emitter-base breakdown voltage collector-emitter saturation voltage base-emitter on voltage collector cutoff current collector cutoff current emitter cutoff current dc current gain dc current gain current-gain ? bandwidth product collector output capacitance conditions lc= 20ma; ib= 0 lc=1ma; ie=0 |e=1ma; lc=0 lc= 7a; ib= 0.875a lc=7a;vce=1.5v vcb= 250v; ie= 0 vcb=250v;le=0;tc=150c vce= 250v; vbe= 0 vce= 250v; vbe= 0; tc= 150c veb= 6v; lc= 0 lc=2a;vce=1.5v lc=7a;vce=1.5v lc= 0.2a; vce= 10v |e=0;vca=10v, f=1mhz min 160 250 6 25 8 typ. 20 max 1.5 1.5 1.0 10 1.0 10 1.0 160 200 unit v v v v v ma ma ma mhz pf switching times ton toff ts turn-on time turn-off time storage time |c= 6a; ib1= -ib2= 1a 2.0 2.0 1.2 u s p s us
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