maximum ratings: (t a =25c) symbol units collector-base voltage v cbo 40 v collector-emitter voltage v ceo 25 v emitter-base voltage v ebo 6.0 v continuous collector current i c 1.0 a power dissipation (note 1) p d 1.65 w operating and storage junction temperature t j, t stg -65 to +150 c thermal resistance ja 76 c/w electrical characteristics per transistor: (t a =25c unless otherwise noted) npn pnp symbol test conditions min typ typ max units i cbo v cb =40v 100 na i ebo v eb =6.0v 100 na bv cbo i c =100a 40 v bv ceo i c =10ma 25 v bv ebo i e =100a 6.0 v v ce(sat) i c =50ma, i b =5.0ma 25 30 50 mv v ce(sat) i c =100ma, i b =10ma 40 50 75 mv marking codes: ctlm3410-m832d: cfg ctlm7410-m832d: cfh ctlm3474-m832d: cfj applications ? switching circuits ? dc - dc converters ? lcd backlighting ? battery powered / portable equipment applications including cell phones, digital cameras, pagers, pdas, notebook pcs, etc. features ? dual chip device ? high current (1.0a) transistors ? low v ce(sat) transistors (450mv @ i c =1.0a max) ? high power to footprint ratio of 275mw per sq mm (package power dissipation / package surface area) ? small tlm 3x2mm leadless surface mount package ? complementary devices notes: (1) fr-4 epoxy pcb with copper mounting pad area of 54mm 2 . ctlm3410-m832d ctlm7410-m832d ctlm3474-m832d surface mount dual, low v ce (sat) silicon transistors description: the central semiconductor ctlm3410-m832d (dual npn), ctlm7410-m832d (dual pnp), and ctlm3474-m832d (complementary npn & pnp) are low v ce(sat) transistors packaged in the small, thermally efficient, 3x2mm tiny leadless module (tlm?) surface mount case. these devices are designed for applications where small size, operational efficiency, and low energy consumption are the prime requirements. due to its leadless package design this device is capable of dissipating up to 4 times the power of similar devices in comparable sized surface mount packages. tlm832d case www.centralsemi.com r3 (1-august 2011)
ctlm3410-m832d ctlm7410-m832d ctlm3474-m832d surface mount dual, low v ce (sat) silicon transistors electrical characteristics per transistor - continued: (t a =25c) npn pnp symbol test conditions min typ typ max units v ce(sat) i c =200ma, i b =20ma 80 95 150 mv v ce(sat) i c =500ma, i b =50ma 190 205 250 mv v ce(sat) i c =800ma, i b =80ma 290 320 400 mv v ce(sat) i c =1.0a, i b =100ma 360 400 450 mv v be(sat) i c =800ma, i b =80ma 1.1 v v be(on) v ce =1.0v, i c =10ma 0.9 v h fe v ce =1.0v, i c =10ma 100 h fe v ce =1.0v, i c =100ma 100 300 h fe v ce =1.0v, i c =500ma 100 h fe v ce =1.0v, i c =1.0a 50 f t v ce =10v, i c =50ma, f=100mhz 100 mhz c ob v cb =10v, i e =0, f=1.0mhz (ctlm3410-m832d) 6.0 10 pf c ob v cb =10v, i e =0, f=1.0mhz (ctlm7410-m832d) 10 15 pf tlm832d case - mechanical outline lead codes: 1) base q1 2) emitter q1 3) base q2 4) emitter q2 5) collector q2 6) collector q2 7) collector q1 8) collector q1 ctlm3410-m832d dual npn marking code: cfg ctlm7410-m832d dual pnp marking code: cfh ctlm3474-m832d complementary npn & pnp marking code: cfj * note: - exposed pad p1 common to pins 7 and 8 - exposed pad p2 common to pins 5 and 6 www.centralsemi.com r3 (1-august 2011)
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