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insulated gate bipolar transistor with ultrafast soft recovery diode e g n-channel c v ces = 600v i c = 24a, t c = 100c t sc ?? 5 s, t j(max) = 175c v ce(on) typ. = 1.65v features ? low v ce (on) trench igbt technology ? low switching losses ? maximum junction temperature 175 c ?5 s short circuit soa ? square rbsoa ? 100% of the parts tested for i lm ? positive v ce (on) temperature co-efficient ? ultra fast soft recovery co-pak diode ? tight parameter distribution ? lead free package benefits ? high efficiency in a wide range of applications ? suitable for a wide range of switching frequencies due to low v ce (on) and low switching losses ? rugged transient performance for increased reliability ? excellent current sharing in parallel operation ? low emi g c e gate collector emitter to-247ac irgp4062dpbf to-220ab irgb4062dpbf g c e c g c e c to-247ad irgp4062d-epbf c g c e

absolute maximum ratings parameter max. units v ces collec tor-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 48 i c @ t c = 100c continuous collector current 24 i cm pulse collector current, v ge = 15v 72 i lm clamped inductive load current, v ge = 20v 96 a i f @ t c = 25c diode continous forward current 48 i f @ t c = 100c diode continous forward current 24 i fm diode maximum forward current 96 v ge continuous gate-to-emitter voltage 20 v transient gate-to-emitter voltage 30 p d @ t c = 25c maximum power dissipation 250 w p d @ t c = 100c maximum power dissipation 125 t j operating junction and -55 to +175 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) thermal resistance parameter min. typ. max. units r jc (igbt) thermal resistance junction-to-case-(each igbt) to-220ab ??? ??? 0.60 r jc (diode) thermal resistance junction-to-case-(each diode) to-220ab ??? ??? 1.53 r jc (igbt) thermal resistance junction-to-case-(each igbt) to-247 ??? ??? 0.65 c/w r jc (diode) thermal resistance junction-to-case-(each diode) to-247 ??? ??? 1.62 r cs thermal resistance, case-to-sink (flat, greased surface) ??? 0.50 ??? r ja thermal resistance, junction-to-ambient (typical socket mount) ??? 80 ???

notes: v cc = 80% (v ces ), v ge = 20v, l = 100 h, r g = 10 ?? this is only applied to to-220ab package. pulse width limited by max. junction temperature. refer to an-1086 for guidelines for measuring v (br)ces safely. electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions ref.fig v (br)ces collector-to-emitter breakdown voltage 600??v v ge = 0v, i c = 100 a ct6 ? v (br)ces / ? t j temperature coeff. of breakdown voltage ?0.30?v/c v ge = 0v, i c = 1ma (25c-175c) ct6 ?1.601.95 i c = 24a, v ge = 15v, t j = 25c 5,6,7 v ce(on) collector-to-emitter saturation voltage ? 2.03 ? v i c = 24a, v ge = 15v, t j = 150c 9,10,11 ?2.04? i c = 24a, v ge = 15v, t j = 175c v ge(th) gate threshold voltage 4.0 ? 6.5 v v ce = v ge , i c = 700 a 9, 10, ? v ge(th) / ? tj threshold voltage temp. coefficient ? -18 ? mv/c v ce = v ge , i c = 1.0ma (25c - 175c) 11, 12 gfe forward transconductance ? 17 ? s v ce = 50v, i c = 24a, pw = 80 s i ces collector-to-emitter leakage current ? 2.0 25 a v ge = 0v, v ce = 600v ?775? v ge = 0v, v ce = 600v, t j = 175c v fm diode forward voltage drop ? 1.80 2.6 v i f = 24a 8 ?1.28? i f = 24a, t j = 175c i ges gate-to-emitter leakage current ? ? 100 na v ge = 20v switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units ref.fig q g total gate charge (turn-on) ? 50 75 i c = 24a 24 q ge gate-to-emitter charge (turn-on) ? 13 20 nc v ge = 15v ct1 q gc gate-to-collector charge (turn-on) ? 21 31 v cc = 400v e on turn-on switching loss ? 115 201 i c = 24a, v cc = 400v, v ge = 15v ct4 e off turn-off switching loss ? 600 700 j r g = 10 ? , l = 200 h, l s = 150nh, t j = 25c e total total switching loss ? 715 901 energy losses include tail & diode reverse recovery t d(on) turn-on delay time ? 41 53 i c = 24a, v cc = 400v, v ge = 15v ct4 t r rise time ? 22 31 ns r g = 10 ? h, l s = 150nh, t j = 25c t d(off) turn-off delay time ? 104 115 t f fall time ? 29 41 e on turn-on switching loss ? 420 ? i c = 24a, v cc = 400v, v ge =15v 13, 15 e off turn-off switching loss ? 840 ? j r g =10 ? h, l s =150nh, t j = 175c ct4 e total total switching loss ? 1260 ? energy losses include tail & diode reverse recovery wf1, wf2 t d(on) turn-on delay time ? 40 ? i c = 24a, v cc = 400v, v ge = 15v 14, 16 t r rise time ? 24 ? ns r g = 10 ? , l = 200 h, l s = 150nh ct4 t d(off) turn-off delay time ? 125 ? t j = 175c wf1 t f fall time ? 39 ? wf2 c ies input capacitance ? 1490 ? pf v ge = 0v 23 c oes output capacitance ? 129 ? v cc = 30v c res reverse transfer capacitance ? 45 ? f = 1.0mhz t j = 175c, i c = 96a 4 rbsoa reverse bias safe operating area full square v cc = 480v, vp =600v ct2 rg = 10 ? , v ge = +20v to 0v scsoa short circuit safe operating area 5 ? ? s v cc = 400v, vp =600v 22, ct3 rg = 10 ? , v ge = +15v to 0v wf4 erec reverse recovery energy of the diode ? 621 ? j t j = 175c 17, 18, 19 t rr diode reverse recovery time ? 89 ? ns v cc = 400v, i f = 24a 20, 21 i rr peak reverse recovery current ? 37 ? a v ge = 15v, rg = 10 ? h, l s = 150nh wf3 conditions

fig. 1 - maximum dc collector current vs. case temperature fig. 2 - power dissipation vs. case temperature fig. 3 - forward soa t c = 25c, t j ?? 175c; v ge =15v fig. 4 - reverse bias soa t j = 175c; v ge =20v fig. 5 - typ. igbt output characteristics t j = -40c; tp = 80 s fig. 6 - typ. igbt output characteristics t j = 25c; tp = 80 s 0 20 40 60 80 100 120 140 160 180 t c (c) 0 5 10 15 20 25 30 35 40 45 50 i c ( a ) 0 20 40 60 80 100 120 140 160 180 t c (c) 0 50 100 150 200 250 300 p t o t ( w ) 10 100 1000 v ce (v) 1 10 100 1000 i c ( a ) 0 1 2 3 4 5 6 7 8 v ce (v) 0 10 20 30 40 50 60 70 80 90 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 0 1 2 3 4 5 6 7 8 v ce (v) 0 10 20 30 40 50 60 70 80 90 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 1 10 100 1000 10000 v ce (v) 0.1 1 10 100 1000 i c ( a ) 1msec 10 sec 100 sec tc = 25c tj = 175c single pulse dc

fig. 7 - typ. igbt output characteristics t j = 175c; tp = 80 s fig. 8 - typ. diode forward characteristics tp = 80 s fig. 10 - typical v ce vs. v ge t j = 25c fig. 11 - typical v ce vs. v ge t j = 175c fig. 12 - typ. transfer characteristics v ce = 50v; tp = 10 s fig. 9 - typical v ce vs. v ge t j = -40c 0 1 2 3 4 5 6 7 8 v ce (v) 0 10 20 30 40 50 60 70 80 90 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 0.0 1.0 2.0 3.0 v f (v) 0 20 40 60 80 100 120 i f ( a ) -40c 25c 175c 5 101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 12a i ce = 24a i ce = 48a 0 5 10 15 v ge (v) 0 20 40 60 80 100 120 i c e ( a ) t j = 25c t j = 175c 5 101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 12a i ce = 24a i ce = 48a 5 101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 12a i ce = 24a i ce = 48a

fig. 13 - typ. energy loss vs. i c t j = 175c; l = 200 h; v ce = 400v, r g = 10 ? ; v ge = 15v fig. 14 - typ. switching time vs. i c t j = 175c; l = 200 h; v ce = 400v, r g = 10 ? ; v ge = 15v fig. 15 - typ. energy loss vs. r g t j = 175c; l = 200 h; v ce = 400v, i ce = 24a; v ge = 15v fig. 16 - typ. switching time vs. r g t j = 175c; l = 200 h; v ce = 400v, i ce = 24a; v ge = 15v fig. 17 - typ. diode i rr vs. i f t j = 175c fig. 18 - typ. diode i rr vs. r g t j = 175c 0 102030405060 i c (a) 0 200 400 600 800 1000 1200 1400 1600 1800 e n e r g y ( j ) e off e on 10 20 30 40 50 i c (a) 1 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 0 25 50 75 100 125 r g ( ? ) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 0 10 20 30 40 50 60 i f (a) 10 15 20 25 30 35 40 i r r ( a ) r g = 10 ? r g = 22 ? r g = 47 ? r g = 100 ? 0 25 50 75 100 125 r g ( ?? 5 10 15 20 25 30 35 40 45 i r r ( a ) 0 25 50 75 100 125 rg ( ? ) 0 200 400 600 800 1000 1200 1400 1600 e n e r g y ( j ) e off e on

fig. 19 - typ. diode i rr vs. di f /dt v cc = 400v; v ge = 15v; i f = 24a; t j = 175c fig. 20 - typ. diode q rr vs. di f /dt v cc = 400v; v ge = 15v; t j = 175c fig. 23 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz fig. 24 - typical gate charge vs. v ge i ce = 24a; l = 600 h fig. 21 - typ. diode e rr vs. i f t j = 175c fig. 22 - v ge vs. short circuit time v cc = 400v; t c = 25c 0 500 1000 1500 di f /dt (a/ s) 5 10 15 20 25 30 35 40 45 i r r ( a ) 0 10 20 30 40 50 60 i f (a) 0 200 400 600 800 1000 e n e r g y ( j ) r g = 10 ? r g = 22 ? r g = 47 ? r g = 100 ? 8 1012141618 v ge (v) 4 6 8 10 12 14 16 t i m e ( s ) 40 80 120 160 200 240 280 c u r r e n t ( a ) 0 20 40 60 80 100 v ce (v) 10 100 1000 10000 c a p a c i t a n c e ( p f ) cies coes cres 0 5 10 15 20 25 30 35 40 45 50 55 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) v ces = 300v v ces = 400v 0 500 1000 1500 di f /dt (a/ s) 500 1000 1500 2000 2500 3000 3500 4000 q r r ( n c ) 10 ? 22 ? 100 ? 47 ? 24a 48a 12a

fig. 26. maximum transient thermal impedance, junction-to-case (diode) to-220ab fig 25. maximum transient thermal impedance, junction-to-case (igbt) to-220ab 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) ?? i (sec) 0.2329 0.000234 0.3631 0.007009 ? j ? j ? 1 ? 1 ? 2 ? 2 r 1 r 1 r 2 r 2 ? ? c ci i ? ri ci= ? i ? ri 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) ?? i (sec) 0.476 0.000763 0.647 0.003028 0.406 0.023686 ? j ? j ? 1 ? 1 ? 2 ? 2 ? 3 ? 3 r 1 r 1 r 2 r 2 r 3 r 3 ? ? c ci i ? ri ci= ? i ? ri

fig. 28. maximum transient thermal impedance, junction-to-case (diode) to-247 fig 27. maximum transient thermal impedance, junction-to-case (igbt) to-247 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) ?? i (sec) 0.2782 0.000311 0.3715 0.006347 ? j ? j ? 1 ? 1 ? 2 ? 2 r 1 r 1 r 2 r 2 ? ? c ci i ? ri ci= ? i ? ri 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) ?? i (sec) 0.693 0.001222 0.621 0.005254 0.307 0.038140 ? j ? j ? 1 ? 1 ? 2 ? 2 ? 3 ? 3 r 1 r 1 r 2 r 2 r 3 r 3 ? ? c ci i ? ri ci= ? i ? ri

1k vc c dut 0 l l rg 80 v dut 480v l rg vcc diode clamp / du t du t / driver - 5v rg vcc dut r = v cc i cm fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit fig.c.t.3 - s.c. soa circuit fig.c.t.4 - switching loss circuit fig.c.t.5 - resistive load circuit fig.c.t.6 - bvces filter circuit dc 4x dut 360v

fig. wf3 - typ. diode recovery waveform @ t j = 175c using fig. ct.4 fig. wf1 - typ. turn-off loss waveform @ t j = 175c using fig. ct.4 fig. wf2 - typ. turn-on loss waveform @ t j = 175c using fig. ct.4 fig. wf4 - typ. s.c. waveform @ t j = 25c using fig. ct.3 -50 -40 -30 -20 -10 0 10 20 30 -0.15 -0.05 0.05 0.15 0.25 time ( s) i rr (a) peak i rr q rr t rr 10% pe a k i rr -100 0 100 200 300 400 500 600 -5.00 0.00 5.00 10.00 time ( s) v ce (v) -50 0 50 100 150 200 250 300 i ce (a) v ce i ce -100 0 100 200 300 400 500 600 -0.40 0.10 0.60 time( s) v ce (v) -5 0 5 10 15 20 25 30 e off loss 5% v ce 5% i ce 90% i ce tf v ce c i ce -100 0 100 200 300 400 500 600 11.70 11.90 12.10 12.30 time ( s) v ce (v) -10 0 10 20 30 40 50 60 e on i ce c 90% test 10% i ce 5% v ce tr v ce c

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