advanced power dual n-channel enhancement electronics corp. mode power mosfet simple drive requirement bv dss 20v low on-resistance r ds(on) 35m fast switching i d 6a description absolute maximum ratings symbol units v ds drain-source voltage v v gs gate-source voltage v i d @t a =25 continuous drain current 3 a i d @t a =70 continuous drain current 3 a i dm pulsed drain current 1 a p d @t a =25 total power dissipation w t stg storage temperature range t j operating junction temperature range symbol value unit rthj-amb maximum thermal resistance, junction-ambient 3 62.5 /w data and specifications subject to change without notice parameter 1 200904031 ap4924gm thermal data 20 -55 to 150 rating 2 rohs-compliant product parameter -55 to 150 + 12 6 4.8 35 advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost- effectiveness. the so-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. s1 g1 s2 g2 d1 d1 d2 d2 so-8 g2 d2 s2 g1 d1 s1
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 20 - - v r ds(on) static drain-source on-resistance 2 v gs =4.5v, i d =6a - - 35 m ? v gs =2.5v, i d =5.2a - - 50 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 0.5 - 1.2 v g fs forward transconductance v ds =10v, i d =6a - 18.5 - s i dss drain-source leakage current v ds =20v, v gs =0v - - 1 ua drain-source leakage current (t j =70 o c) v ds =16v, v gs =0v - - 250 ua i gss gate-source leakage v gs =+ 12v, v ds =0v - - + 100 na q g total gate charge 2 i d =6a - 9 - nc q gs gate-source charge v ds =10v - 1.8 - nc q gd gate-drain ("miller") charge v gs =4.5v - 4.2 - nc t d(on) turn-on delay time 2 v ds =10v - 6.5 - ns t r rise time i d =1a - 14 - ns t d(off) turn-off delay time r g =6 , v gs =4.5v - 20 - ns t f fall time r d =10 -15- ns c iss input capacitance v gs =0v - 300 - pf c oss output capacitance v ds =8v - 255 - pf c rss reverse transfer capacitance f=1.0mhz - 115 - pf source-drain diode symbol parameter test conditions min. typ. max. units i s continuous source current ( body diode ) v d =v g =0v , v s =1.2v - - 1.67 a v sd forward on voltage 2 t j =25 , i s =1.7a, v gs =0v - - 1.2 v notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board ; 135 /w when mounted on min. copper pad. this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit descri herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 ap4924gm
ap4924gm fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature 3 0 5 10 15 20 25 0123456 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 4.5v 3.5v 3.0v 2.5v v gs =2.0v 0 5 10 15 20 25 0123456 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 4.5v 3.5v 3.0v 2.5v v gs =2.0v 20 25 30 35 40 45 2345 v gs (v) r ds(on) (m ) i d =6a t c =25 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =6a v gs =4.5v
fig 5. maximum drain current v.s. fig 6. typical power dissipation case temperature fig 7. maximum safe operating area fig 8. effective transient thermal impedance 4 ap4924gm 0 1 2 3 4 5 6 7 8 25 50 75 100 125 150 t c , case temperature ( o c) i d , drain current (a) 0 1 2 3 0 50 100 150 t c ,case temperature ( o c) p d (w) 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja =135 o c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor = 0.5 single pulse 0.01 0.1 1 10 100 0.1 1 10 100 v ds (v) i d (a) t c =25 o c single pulse 1ms 10ms 100ms 1s 10s d c
ap4924gm fig 9. gate charge characteristics fig 10. typical capacitance characteristics fig 11. forward characteristic of fig 12. gate threshold voltage v.s. reverse diode junction temperature 5 10 100 1000 1 5 9 1317212529 v ds (v) c (pf) f =1.0mhz ciss coss crss 0 1 2 3 4 5 6 024681012 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =6a v ds =10v 0.01 0.10 1.00 10.00 100.00 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 v sd (v) i s (a) t j =25 o c t j =150 o c 0 0.5 1 1.5 -50 0 50 100 150 t j ,junction temperature ( o c) v gs(th) (v)
ap4924gm fig 13. switching time circuit fig 14. switching time waveform fig 15. gate charge circuit fig 16. gate charge waveform 6 t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 4.5v q gs q gd q g charge 0.5x rated v ds to the oscilloscope - + 4..5v d g s v ds v gs r g r d 0.5 x rated v ds to the oscilloscope - + d g s v ds v gs i d i g 1~ 3 ma
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