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1. product profile 1.1 general description 160 w ldmos packaged asymmetrical doherty power transistor for base station applications at frequencies from 2496 mhz to 2690 mhz. [1] test signal: 3gpp test model 1; 1 to 64 dp ch; par = 7.2 db at 0.01 % probability on ccdf. 1.2 features and benefits ? excellent ruggedness ? high efficiency ? low thermal resistance providing excellent thermal stability ? decoupling leads to enable improved video bandwidth ? lower output capacitance for improved performance in doherty applications ? designed for low memory effects prov iding excellent pre-distortability ? internally matched for ease of use ? integrated esd protection ? compliant to restriction of hazardous substances (rohs) directive 2002/95/ec 1.3 applications ? rf power amplifier for w-cdma base statio ns and multi carrier applications in the 2496 mhz to 2690 mhz frequency range blc8g27ls-160av power ldmos transistor rev. 2 ? 3 june 2014 product data sheet table 1. typical performance typical rf performance at t case = 25 ? c in the doherty demo board. test signal f v ds p l(av) g p ? d acpr (mhz) (v) (w) (db) (%) (dbc) 1-carrier w-cdma 2496 to 2690 28 31.6 14.5 43 ? 30 [1]
blc8g27ls-160av all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all ri ghts reserved. product data sheet rev. 2 ? 3 june 2014 2 of 14 nxp semiconductors blc8g27ls-160av power ldmos transistor 2. pinning information [1] connected to flange. 3. ordering information 4. limiting values [1] continuous use at maximum temperature will affect the reliability, for details refer to the on-line mtf calculator. 5. thermal characteristics table 2. pinning pin description simplified outline graphic symbol 1 drain1 (main) 2 drain2 (peak) 3 gate1 (main) 4 gate2 (peak) 5 video decoupling (main) 6 video decoupling (peak) 7source [1] ddd table 3. ordering information type number package name description version blc8g27ls-160av - air cavity plastic earless flanged package; 6 leads sot1275-1 table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 65 v v gs gate-source voltage ? 0.5 +13 v t stg storage temperature ? 65 +150 ?c t j junction temperature [1] - 225 ?c table 5. thermal characteristics symbol parameter conditions typ unit main device r th(j-case) thermal resistance from junction to case t case =80 ?c; v ds =28v; i dq =490ma p l = 32 w 0.509 k/w p l = 100 w 0.363 k/w
blc8g27ls-160av all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all ri ghts reserved. product data sheet rev. 2 ? 3 june 2014 3 of 14 nxp semiconductors blc8g27ls-160av power ldmos transistor 6. characteristics peak device r th(j-case) thermal resistance from junction to case t case =80 ?c; v ds =28v; i dq =490ma p l = 32 w 0.069 k/w p l = 100 w 0.284 k/w table 5. thermal characteristics ?continued symbol parameter conditions typ unit table 6. dc characteristics t j = 25 ? c unless otherwise specified. symbol parameter conditions min typ max unit main device v (br)dss drain-source breakdown voltage v gs =0v; i d =0.9ma 65--v v gs(th) gate-source threshold voltage v ds =10 v; i d =90ma 1.5 1.9 2.3 v v gsq gate-source quiescent voltage v ds =28 v; i d = 300 ma 1.6 2.0 2.4 v i dss drain leakage current v gs =0v; v ds =28v - - 1.4 ? a i dsx drain cut-off current v gs =v gs(th) +3.75 v; v ds =10v -17- a i gss gate leakage current v gs =11v; v ds = 0 v - - 140 na g fs forward transconductance v ds =10v; i d = 90 ma - 0.78 - s r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d =3.15a - 174 260 m ? peak device v (br)dss drain-source breakdown voltage v gs =0v; i d =1.1ma 65--v v gs(th) gate-source threshold voltage v ds =10 v; i d = 110 ma 1.5 1.9 2.3 v v gsq gate-source quiescent voltage v ds =28 v; i d = 600 ma 1.6 2.0 2.4 v i dss drain leakage current v gs =0v; v ds =28v - - 1.4 ? a i dsx drain cut-off current v gs =v gs(th) +3.75 v; v ds =10v -20- a i gss gate leakage current v gs =11v; v ds = 0 v - - 140 na g fs forward transconductance v ds =10v; i d =110ma - 0.97 - s r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d =3.85a - 145 215 m ? table 7. rf characteristics test signal: 1-carrier w-cdma; par = 7.2 db at 0.01 % probability on the ccdf; 3gpp test model 1; 1 - 64 dpch; f 1 = 2496 mhz; f 2 = 2690 mhz; rf performance at v ds =28v; i dq = 250 ma (main); v gs(amp)peak = 0.70 v; t case =25 ? c; unless otherwise specified; in an asymmetrical doherty production test circuit at 2496 mhz to 2690 mhz. symbol parameter conditions min typ max unit g p power gain p l(av) = 31.6 w 13.3 14.3 - db rl in input return loss p l(av) = 31.6 w - ? 13 ? 6db ? d drain efficiency p l(av) = 31.6 w 36 41 - % acpr adjacent channel power ratio p l(av) = 31.6 w - ? 30 ? 25 dbc
blc8g27ls-160av all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all ri ghts reserved. product data sheet rev. 2 ? 3 june 2014 4 of 14 nxp semiconductors blc8g27ls-160av power ldmos transistor 7. test information 7.1 ruggedness in doherty operation the blc8g27ls-160av is capable of withstanding a load mismatch corresponding to a vswr = 10 : 1 through all phases under the following conditions: v ds =28v; i dq = 250 ma (main); v gs(amp)peak =0.7v; p l = 120 w (cw); f = 2496 mhz. 7.2 impedance information [1] z s and z l defined in figure 1 . [2] at 3 db gain compression. table 8. rf characteristics test signal: 1-carrier w-cdma; par = 7.2 db at 0.01 % probability on the ccdf; 3gpp test model 1; 1 - 64 dpch; f = 2690 mhz; rf performance at v ds = 28 v; i dq = 250 ma (main); v gs(amp)peak = 0.7 v; t case = 25 ? c; unless otherwise specified; in an asymmetrical doherty production test circuit at 2496 mhz to 2690 mhz. symbol parameter conditions min typ max unit par o output peak-to-average ratio p l(av) = 63 w 3.75 4.7 - db p l(m) peak output power 146 170 - w table 9. typical impedance of main device measured load-pull data of main device; i dq = 570 ma (main); v ds = 28 v. f z s [1] z l [1] p l [2] ? d [2] g p [2] (mhz) (? ) (? ) (w) (%) (db) maximum power load 2496 2 ? j6.9 1.6 ? j7.6 109 56 13.7 2600 3 ? j7 1.5 ? j8.1 107 52.8 13.9 2690 5.2 ? j8.7 1.5 ? j8.1 103 54.6 14.8 maximum drain efficiency load 2496 2 ? j6.9 2.6 ? j6.6 89 64 15.6 2600 3 ? j7 2.6 ? j6.6 79 63 16.5 2690 5.2 ? j8.7 2.1 ? j7.1 81 61 16.7 table 10. typical impedance of peak device measured load-pull data of peak device; i dq = 680 ma (peak); v ds = 28 v. f z s [1] z l [1] p l [2] ? d [2] g p [2] (mhz) (? ) (? ) (w) (%) (db) maximum power load 2496 2 ? j6.9 3.3 ? j8.3 128 56.9 15.2 2600 3 ? j7 3.3 ? j8.3 118 57 15.6 2690 5.2 ? j8.7 4 ? j10 120 52.5 15.6
blc8g27ls-160av all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all ri ghts reserved. product data sheet rev. 2 ? 3 june 2014 5 of 14 nxp semiconductors blc8g27ls-160av power ldmos transistor [1] z s and z l defined in figure 1 . [2] at 3 db gain compression. 7.3 recommended impedances for doherty design [1] z s and z l defined in figure 1 . [2] at 3 db gain compression. [3] at p l(av) = 44.5 dbm. [1] z s and z l defined in figure 1 . [2] at 3 db gain compression. [3] at p l(av) = 44.5 dbm. maximum drain efficiency load 2496 2 ? j6.9 3.5 ? j5.8 94 63 17 2600 3 ? j7 3.5 ? j5.8 83 60 17.7 2690 5.2 ? j8.7 3.3 ? j7.7 97 59 17.4 fig 1. definition of transistor impedance table 10. typical impedance of peak device ?continued measured load-pull data of peak device; i dq = 680 ma (peak); v ds = 28 v. f z s [1] z l [1] p l [2] ? d [2] g p [2] (mhz) (? ) (? ) (w) (%) (db) ddi gudlq = / = 6 jdwh table 11. typical impedance of main device at 1 : 1 load measured load-pull data of main device; i dq = 570 ma (main); v ds = 28 v. f z s [1] z l [1] p l [2] ? d [3] g p [3] (mhz) (? ) (? ) (dbm) (%) (db) 2496 2 ? j6.9 2.7 ? j7.1 49.7 40 18.5 2600 3 ? j7 2.7 ? j7.1 49.4 41 19.3 2690 5.2 ? j8.7 2.7 ? j7.1 49.1 42 19.5 table 12. typical impedance of main device at 1 : 2.5 load measured load-pull data of main device; i dq = 750 ma (main); v ds = 28 v. f z s [1] z l [1] p l [2] ? d [3] g p [3] (mhz) (? ) (? ) (dbm) (%) (db) 2496 2 ? j6.9 2.9 ? j4.5 44.56 48 19.8 2600 3 ? j7 2.9 ? j4.5 44.44 53 20.9 2690 5.2 ? j8.7 3 ? j4.9 44.5 50.3 20.8
blc8g27ls-160av all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all ri ghts reserved. product data sheet rev. 2 ? 3 june 2014 6 of 14 nxp semiconductors blc8g27ls-160av power ldmos transistor 7.4 vbw in doherty operation the blc8g27ls-160av shows 130 mhz (typical) video bandwidth in doherty demo board in 2600 mhz at v ds =28v; i dq = 250 ma and v gs(amp)peak =0.8v. 7.5 test circuit printed-circuit board (pcb): rogers ro4350b; ? r = 3.5; thickness = 0.508 mm; thickness copper plating = 35 ? m. see table 13 for a list of components. fig 2. component layout table 13. list of components see figure 2 for component layout. component description value remarks c1, c2 multilayer ceramic chip capacitor 0.3 pf atc 600f c4 multilayer ceramic chip capacitor 3.3 pf atc 600f c5, c22, c23, c24, c25, c26, c27 multilayer ceramic chip capacitor 10 pf atc 600f c12, c13 multilayer ceramic chip capacitor 1 ? f murata, smd 1206 c14, c15, c16, c17 multilayer ceramic chip capacitor 10 ? f murata, smd 1206 c18, c19 electroly tic capacitor 2200 ? f, 63 v bccomponents p1, p2, p3 copper foil strip - needed for tuning r1, r2 resistor 5.1 ? smd 0805 3 & & & & & & & & 5 3 3 & & & 5 5 & & & & & & & ddd
blc8g27ls-160av all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all ri ghts reserved. product data sheet rev. 2 ? 3 june 2014 7 of 14 nxp semiconductors blc8g27ls-160av power ldmos transistor 7.6 graphical data 7.6.1 pulsed cw v ds =28v; i dq = 250 ma (main device); v gs(amp)peak = 0.65 v; t p = 100 ? s; ? = 10 %. (1) f = 2496 mhz (2) f = 2690 mhz v ds =28v; i dq = 250 ma (main device); v gs(amp)peak = 0.65 v; t p = 100 ? s; ? = 10 %. (1) f = 2496 mhz (2) f = 2690 mhz fig 3. power gain as a function of output power; typical values fig 4. drain efficiency as a function of output power; typical values v ds =28v; i dq = 250 ma (main device); v gs(amp)peak = 0.65 v; t p = 100 ? s; ? = 10 %. (1) f = 2496 mhz (2) f = 2690 mhz fig 5. input return loss as a function of average output power; typical values ddd 3 / : * s * s g% g% g% ddd 3 / : ' ' ddd 3 /$9 : 5/ 5/ lq lq 5/ lq g% g% g%
blc8g27ls-160av all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all ri ghts reserved. product data sheet rev. 2 ? 3 june 2014 8 of 14 nxp semiconductors blc8g27ls-160av power ldmos transistor 7.6.2 1-carrier w-cdma v ds =28v; i dq = 250 ma (main device); v gs(amp)peak =0.65v. (1) f = 2496 mhz (2) f = 2690 mhz v ds =28v; i dq = 250 ma (main device); v gs(amp)peak =0.65v. (1) f = 2496 mhz (2) f = 2690 mhz fig 6. power gain as a function of average output power; typical values fig 7. drain efficiency as a function of average output power; typical values v ds =28v; i dq = 250 ma (main device); v gs(amp)peak =0.65v. (1) f = 2496 mhz (2) f = 2690 mhz v ds =28v; i dq = 250 ma (main device); v gs(amp)peak =0.65v. (1) f = 2496 mhz (2) f = 2690 mhz fig 8. peak-to-average power ratio as a function of average output power; typical values fig 9. input return loss as a function of average output power; typical values ddd 3 /$9 : * s * s g% g% g% ddd 3 /$9 : ' ' ddd 3 /$9 : 3$5 3$5 3$5 g% g% g% ddd 3 /$9 : 5/ 5/ lq lq 5/ lq g% g% g%
blc8g27ls-160av all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all ri ghts reserved. product data sheet rev. 2 ? 3 june 2014 9 of 14 nxp semiconductors blc8g27ls-160av power ldmos transistor 7.6.3 2-tone vbw v ds =28v; i dq = 250 ma (main device); v gs(amp)peak =0.65v. (1) f = 2496 mhz (2) f = 2690 mhz v ds =28v; i dq = 250 ma (main device); v gs(amp)peak =0.65v. (1) f = 2496 mhz (2) f = 2690 mhz fig 10. adjacent channel power ratio (5 mhz) as a function of average output power; typical values fig 11. adjacent channel power ratio (10 mhz) as a function of average output power; typical values ddd 3 /$9 g%p $&35 $&35 0 0 $&35 0 g%f g%f g%f ddd 3 /$9 g%p $&35 _$&35 0 0 $&35 0 g%f g%f g%f v ds = 28 v; i dq = 250 ma; f c = 2600 mhz. (1) imd low (2) imd high fig 12. vbw capability in doherty demo board ddd fduulhuvsdflqj0+] ,0' ,0' ,0' g%f g%f g%f ,0' ,0' ,0' ,0' ,0' ,0' ,0' ,0' ,0'
blc8g27ls-160av all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all ri ghts reserved. product data sheet rev. 2 ? 3 june 2014 10 of 14 nxp semiconductors blc8g27ls-160av power ldmos transistor 8. package outline fig 13. package outline sot1275-1 5hihuhqfhv 2xwolqh yhuvlrq (xurshdq surmhfwlrq ,vvxhgdwh ,(& -('(& -(,7$ 627 vrwbsr 8qlw pp pd[ qrp plq $ 'lphqvlrqvppglphqvlrqvduhghulyhgiurpwkhruljlqdolqfkglphqvlrqv $lufdylw\sodvwlfhduohvviodqjhgsdfndjhohdgv 627 ee f'' (( h)++ /4 8 8 ? = = . . ? z y z pp vfdoh % $ h ' + e 4 8 e 8 / ' ) = = ( ( + $ f z % z % y $
blc8g27ls-160av all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all ri ghts reserved. product data sheet rev. 2 ? 3 june 2014 11 of 14 nxp semiconductors blc8g27ls-160av power ldmos transistor 9. handling information 10. abbreviations 11. revision history caution this device is sensitive to electrostatic di scharge (esd). observe precautions for handling electrostatic sensitive devices. such precautions are described in the ansi/esd s20.20 , iec/st 61340-5 , jesd625-a or equivalent standards. table 14. abbreviations acronym description 3gpp 3rd generation partnership project ccdf complementary cumulative distribution function cw continuous wave dpch dedicated physical channel esd electrostatic discharge ldmos laterally diffused metal-oxide semiconductor mtf median time to failure par peak-to-average ratio smd surface moulded device vbw video bandwidth vswr voltage standing wave ratio w-cdma wideband code division multiple access table 15. revision history document id release date data sheet status change notice supersedes blc8g27ls-160av v.2 20140603 product data sheet - blc8g27ls-160av v.1 modifications: ? table 1 on page 1 : table has been updated ? table 3 on page 2 : table has been updated ? table 5 on page 2 : table has been updated ? table 6 on page 3 : table has been added ? table 7 on page 3 : table has been added ? table 8 on page 4 : table has been added ? section 7.1 on page 4 : section has been updated ? section 7.2 on page 4 : section has been added ? section 7.3 on page 5 : section has been added ? section 7.4 on page 6 : section has been added ? section 7.5 on page 6 : section has been added ? section 7.6 on page 7 : section has been added ? figure 13 on page 10 : package outline drawing has been changed blc8g27ls-160av v.1 20130523 objective data sheet - -
blc8g27ls-160av all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all ri ghts reserved. product data sheet rev. 2 ? 3 june 2014 12 of 14 nxp semiconductors blc8g27ls-160av power ldmos transistor 12. legal information 12.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 12.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? 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stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification.
blc8g27ls-160av all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all ri ghts reserved. product data sheet rev. 2 ? 3 june 2014 13 of 14 nxp semiconductors blc8g27ls-160av power ldmos transistor export control ? this document as well as the item(s) described herein may be subject to export control regu lations. export might require a prior authorization from competent authorities. non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicon ductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liabili ty for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses t he product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without nxp semiconductors? warranty of the product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully indemnifies nxp semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive app lications beyond nxp semiconductors? standard warranty and nxp semiconduct ors? product specifications. translations ? a non-english (translated) version of a document is for reference only. the english version shall prevail in case of any discrepancy between the translated and english versions. 12.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 13. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors blc8g27ls-160av power ldmos transistor ? nxp semiconductors n.v. 2014. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 3 june 2014 document identifier: blc8g27ls-160av please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 14. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 thermal characteristics . . . . . . . . . . . . . . . . . . 2 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 test information . . . . . . . . . . . . . . . . . . . . . . . . . 4 7.1 ruggedness in doherty operation . . . . . . . . . . 4 7.2 impedance information . . . . . . . . . . . . . . . . . . . 4 7.3 recommended impedances for doherty design . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 7.4 vbw in doherty operation . . . . . . . . . . . . . . . . 6 7.5 test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 7.6 graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 7 7.6.1 pulsed cw . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 7.6.2 1-carrier w-cdma . . . . . . . . . . . . . . . . . . . . . . 8 7.6.3 2-tone vbw . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 8 package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 9 handling information. . . . . . . . . . . . . . . . . . . . 11 10 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11 11 revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 12 legal information. . . . . . . . . . . . . . . . . . . . . . . 12 12.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 12.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 12.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 12.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 13 contact information. . . . . . . . . . . . . . . . . . . . . 13 14 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

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