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hexfet power mosfet notes through are on page 2 features and benefits applications ?

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v ds 20 v v gs 12 v r ds(on) max (@v gs = 4.5v) 45 m ? r ds(on) max (@v gs = 2.5v) 62 m ? i d (@t c(bottom) = 25c) 3.4 a absolute maximum ratings parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 4.5v i d @ t a = 70c continuous drain current, v gs @ 4.5v i d @ t c(bottom) = 25c continuous drain current, v gs @ 4.5v i d @ t c(bottom) = 100c continuous drain current, v gs @ 4.5v i d @ t c(bottom) = 25c continuous drain current, v gs @ 4.5v (package limited) i dm pulsed drain current p d @t a = 25c power dissipation p d @t c(bottom) = 25c power dissipation linear deratin g factor w/c t j operating junction and t stg storage temperature range v w a c max. 4.5 6.1 40 12 20 3.6 9.6 3.4 -55 to + 150 1.5 0.012 6.6 2mm x 2mm dual pqfn features resulting benefits low r dson ( 45m ?) lower conduction losses low thermal resistance to pcb ( 19c / w) enable better thermal dissipation low profile ( 1.0mm) results in increased power density industry-standard pinout ? multi-vendor compatibility compatible with existing surface mount techniques easier manufacturing rohs compliant containing no lead, no bromide and no halogen environmentally friendlier

!" note form quantity irlhs6276trpbf pqfn dual 2mm x 2mm tape and reel 4000 irlhs6276tr2pbf pqfn dual 2mm x 2mm tape and reel 400 eol notice #259 orderable part number package type standard pack

!" s d g repetitive rating; pulse width limited by max. junction temperature. current limited by package. pulse width 400s; duty cycle 2%. when mounted on 1 inch square copper board. r is measured at t j of approximately 90c. for design aid only, not subject to production testing. th erma l r es i s t ance parameter typ. max. units r jc (bottom) junction-to-case ??? 19 r jc (top) junction-to-case ??? 175 c/w r ja junction-to-ambient ??? 86 r ja (<10s) junction-to-ambient ??? 69 static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 20 ??? ??? v ? v dss / ? t j breakdown voltage temp. coefficient ??? 9.3 ??? mv/c r ds(on) static drain-to-source on-resistance ??? 33 45 ??? 46 62 v gs(th) gate threshold voltage 0.5 0.8 1.1 v ? v gs(th) gate threshold voltage coefficient ??? -3.8 ??? mv/c i dss drain-to-source leakage current ??? ??? 1.0 ??? ??? 150 i gss gate-to-source forward leakage ??? ??? 100 gate-to-source reverse leakage ??? ??? -100 gfs forward transconductance 8.8 ??? ??? s q g total gate charge ??? 3.1 ??? v ds = 10v q gs gate-to-source charge ???0.22??? q gd gate-to-drain charge ??? 1.3 ??? r g gate resistance ??? 4.0 ?? ? ? t d(on) turn-on delay time ??? 4.4 ??? t r rise time ??? 9.3 ??? t d(off) turn-off delay time ??? 10 ??? t f fall time ??? 4.9 ??? c iss input capacitance ??? 310 ??? c oss output capacitance ??? 79 ??? c rss reverse transfer capacitance ??? 49 ??? diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current ( bod y diode ) v sd diode forward voltage ??? ??? 1.2 v t rr reverse recovery time ??? 5.2 7.8 ns q rr reverse recovery charge ??? 5.0 7.5 nc t on forward turn-on time time is dominated by parasitic inductance v ds = v gs , i d = 10a v gs = 2.5v, i d = 3.4a m ? v dd = 10v, v gs = 4.5v r g =1.8 ? v ds = 10v, i d = 3.4a v ds = 16v, v gs = 0v, t j = 125c a i d = 3.4a (see fig.17 & 18) id = 3.4a v gs = 0v v ds = 10v v ds = 16v, v gs = 0v t j = 25c, i f = 3.4a , v dd = 10v di/dt = 126a/s t j = 25c, i s = 3.4a , v gs = 0v showing the integral reverse p-n junction diode. conditions see fig.15 ? = 1.0mhz conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 4.5v, i d = 3.4a ??? ??? 40 ??? ??? 9.6 mosfet symbol na ns a pf nc v gs = 4.5v v gs = 12v v gs = -12v

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!" fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 6. typical gate charge vs.gate-to-source voltage fig 5. typical capacitance vs.drain-to-source voltage 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0246810 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 16v v ds = 10v v ds = 4.0v i d = 3.4a -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 3.4a v gs = 4.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 4.5v 3.0v 2.5v 2.0v 1.8v 1.5v bottom 1.4v 60s pulse width tj = 25c 1.4v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 1.4v 60s pulse width tj = 150c vgs top 10v 4.5v 3.0v 2.5v 2.0v 1.8v 1.5v bottom 1.4v 0.0 1.0 2.0 3.0 4.0 5.0 v gs , gate-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 10v 60s pulse width

!" fig 11. maximum effective transient thermal impedance, junction-to-case (bottom) fig 8. maximum safe operating area fig 9. maximum drain current vs. case (bottom) temperature fig 7. typical source-drain diode forward voltage fig 10. threshold voltage vs. temperature -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.2 0.4 0.6 0.8 1.0 1.2 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 25a 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 25 50 75 100 125 150 t c , case temperature (c) 0 1 2 3 4 5 6 7 8 9 10 i d , d r a i n c u r r e n t ( a ) limited by package 0.0 0.4 0.8 1.2 1.6 2.0 v sd , source-to-drain voltage (v) 0.1 1 10 100 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 0 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) tc = 25c tj = 150c single pulse 100sec 1msec 10msec dc limited by wire bond

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!" fig 12. on-resistance vs. gate voltage fig 14. maximum avalanche energy vs. drain current fig 16.

for n-channel hexfet power mosfets 0 2 4 6 8 10 12 v gs, gate -to -source voltage (v) 0 20 40 60 80 100 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 3.4a t j = 25c t j = 125c 0 5 10 15 20 25 30 i d , drain current (a) 0 50 100 150 200 250 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) v gs = 2.5v v gs = 4.5v 25 50 75 100 125 150 starting t j , junction temperature (c) 0 10 20 30 40 50 60 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 0.89a 1.8a bottom 3.4a 1e-5 1e-4 1e-3 1e-2 1e-1 1e+0 time (sec) 0 200 400 600 800 1000 s i n g l e p u l s e p o w e r ( w )
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? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period

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fig 13. typical on-resistance vs. drain current fig 15. typical power vs. time

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!" fig 18b. unclamped inductive waveforms fig 18a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 19a. switching time test circuit fig 19b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f fig 17a. gate charge test circuit fig 17b. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr 1k vcc dut 0 l s &' 1 (
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!" qualification standards can be found at international rectifier?s web site http://www.irf.com/product-info/reliability applicable version of jedec standard at the time of product release. ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ ms l 1 (per jedec j-s t d-020d ?? ) rohs compliant yes pqfn dual 2mm x 2mm qualification information ? moisture sensitivity level qualification level industrial (per je de c je s d47f ?? guideli nes ) revision history date comment 1/9/2014 ? u p dated orderin g information to reflect the end-of-life ( eol ) of the mini-reel o p tion ( eol notice #259 ) . ? updated data sheet with the new ir corporate template. ? updated the qualification level from consumer to industrial level.

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