2013. 7. 08 1/2 semiconductor technical data mps8050 epitaxial planar npn transistor revision no : 5 high current application. feature h complementary to mps8550. maximum rating (ta=25 ? ) electrical characteristics (ta=25 ? ) characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =35v, i e =0 - - 100 na emitter cut-off current i ebo v eb =6v, i c =0 - - 100 na collector-base breakdown voltage v (br)cbo i c =100 a, i e =0 40 - - v collector-emitter breakdown voltage v (br)ceo i c =2ma, i b =0 25 - - v dc current gain h fe (1) v ce =1v, i c =5ma 45 135 - h fe (2) (note) v ce =1v, i c =100ma 85 160 300 h fe (3) v ce =1v, i c =800ma 40 110 - collector-emitter saturation voltage v ce(sat) i c =800ma, i b =80ma - 0.28 0.5 v base-emitter saturation voltage v be(sat) i c =800ma, i b =80ma - 0.98 1.2 v base-emitter voltage v be v ce =1v, i c =10ma - 0.66 1.0 v transition frequency f t v ce =10v, i c =50ma 100 190 - mhz collector output capacitance c ob v cb =10v, f=1mhz, i e =0 - 9 - pf characteristic symbol rating unit collector-base voltage v cbo 40 v collector-emitter voltage v ceo 25 v emitter-base voltage v ebo 6 v collector current i c 1.5 a collector power dissipation *p c 625 mw 400 junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? note : h fe (2) classification b:85 q 160 , c : 120 q 200 , d : 160 q 300 *cu lead-frame : 625mw fe lead-frame : 400mw
2013. 7. 08 2/2 mps8050 revision no : 5
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