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| savantic semiconductor product specification silicon pnp power transistors NS50A d escription with to-220c package complement to type ns50b applications for medium power linear switching applications pinning pin 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(t c =25) symbol parameter conditions value unit v cbo collector-base voltage open emitter -100 v v ceo collector-emitter voltage open base -60 v v ebo emitter-base voltage open collector -6 v i c collector current (dc) -6 a i cm collector current-pulse -10 a t c =25 65 p c collector power dissipation t a =25 2 w t j junction temperature 150 t stg storage temperature -65~150
savantic semiconductor product specification 2 silicon pnp power transistors NS50A characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =-30ma; i b =0 -60 v v ce( sat ) collector-emitter saturation voltage i c =-4a ;i b =-0.4a -1.0 v v be( s at ) base-emitter saturation voltage i c =-4a ; i b =-0.4a -1.5 v i cbo collector cut-off current v cb =-100v; i e =0 -10 a i ceo collector cut-off current v ce =-60v; i b =0 -0.1 ma i ebo emitter cut-off current v eb =-6v; i c =0 -10 a h fe dc current gain i c =-1a ; v ce =-5v 100 160 f t transition frequency i c =-0.5a ; v ce =-10v 3 mhz savantic semiconductor product specification 3 silicon pnp power transistors NS50A package outline fig.2 outline dimensions |
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