qs5u26 transistor rev.b 1/4 2.5v drive pch+sbd mosfet qs5u26 z structure z dimensions (unit : mm) silicon p-channel mosfet schottky barrier diode z features 1) the qs5u26 combines pch mosfet with a schottky barrier diode in a tsmt5 package. 2) low on-state resistance with fast switching. 3) low voltage drive (2.5v). 4) built-in schottky barrier diode has low forward voltage. z applications switching z packaging specifications z equivalent circuit qs5u26 tr 3000 type package code taping basic ordering unit (pieces) each lead has same dimensions tsmt5 0 ~ 0.1 0.16 0.85 1.0max 0.7 0.3 ~ 0.6 (1) (3)(2) (4)(5) 2.8 1.6 0.4 1.9 2.9 0.950.95 abbreviated symbol : u26 (1)gate (2)source (3)anode (4)cathode (5)drain ?2 ?1 esd protection diode ?2 body diode ?1 (1) (2) (3) (5) (4)
qs5u26 transistor rev.b 2/4 z absolute maximum ratings (ta=25 c) ?1 ?1 ?3 ?2 parameter v v dss symbol ?20 v v gss 12 a i d 1.5 a i dp 6.0 a i s ?0.75 a i sp ?3.0 w / element p d 0.9 v v rm 30 v v r 20 a i f 0.5 a i fsm 2.0 c tj 150 w / total p d 1.25 c tstg ?55 to 150 limits unit parameter symbol limits unit parameter symbol limits unit ?1 pw10s, duty cycle1% ?2 60hz ? 1cyc. ?3 mounted on a ceramic board. drain-source voltage gate-source voltage drain current source current (body diode) channel temperature repetitive peak reverse voltage reverse voltage forward current forward current surge peak junction temperature total power dissipatino range of strage temperature continuous pulsed continuous pulsed c tch 150 power dissipation ?3 w / element p d 0.7 power dissipation ?3 < mosfet > < di > < mosfet and di > z electrical characteristics (ta=25 c) parameter symbol i gss y fs min. ?? 10 av gs = 12v, v ds =0v v dd ?15 v v dd ?15 v typ. max. unit conditions gate-source leakage v (br) dss ?20 ?? vi d =?1ma, v gs =0v drain-source breakdown voltage i dss ??? 1 av ds =?20v, v gs =0v zero gate voltage drain current v gs (th) ?0.7 ?? 2.0 v v ds =?10v, i d =?1ma gate threshold voltage ? 160 200 m ? i d =?1.5a, v gs =?4.5v static drain-source on-starte resistance r ds (on) ? 180 240 m ? i d =?1.5a, v gs =?4v forward transfer admittance ? 260 340 m ? i d =?0.75a, v gs =?2.5v input capacitance 1.0 ?? sv ds =?10v, i d =?0.75a output capacitance c iss ? 325 ? pf v ds =?10v reverse transfer capacitance c oss ? 60 40 ? pf v gs =0v turn-on delay time c rss ? 10 ? pf f=1mhz rise time t d (on) ? 10 ? ns i d =?0.75a turn-off delay time t r ? 35 ? ns fall time t d (off) ? 10 ? ns v gs =?4.5v total gate charge t f ? 4.2 ? ns r l =20? gate-source charge q g ? 1.0 ? nc r g =10? gate-drain charge q gs ? 1.1 ? nc v gs =?4.5v q gd ?? nc i d =?1.5a ? ? ? ? ? ? ? pulsed < mosfet > forward voltage v sd ??? 1.2 v i s =?0.75a, v gs =0v parameter symbol min. typ. max. unit conditions < body diode (source? drain) > forward voltage v f ?? 0.36 v i f =0.1a ?? 0.47 v i f =0.5a i r ?? 100 av r =20v reverse current parameter symbol min. typ. max. unit conditions < di >
qs5u26 transistor rev.b 3/4 z electrical characteristic curves 0 0.5 1 1.5 2 2.5 3 3.5 4 gate-source voltage : ?v gs (v) fig.1 typical transfer characteristics 0.001 0.01 drain current : ?i d (a) 10 0.1 1 ta=125c ta=25c ta=?25c ta=75c v ds =?10v pulsed 0.1 1 10 10 100 drain current : ?i d (a) fig.2 static drain-source on-state resistance vs. drain current () 1000 ta=125c ta=75c ta=25c ta=?25c v gs =?4.5v pulsed static drain-source on-state resistance : r ds (on) (m ? ) 0.1 1 10 10 100 drain current : ?i d (a) fig.3 static drain-source on-state resistance vs. drain current (?) 1000 ta=125c ta=75c ta=25c ta=?25c v gs =?4v pulsed static drain-source on-state resistance : r ds (on) (m ? ) 0.1 1 10 10 100 drain current : ?i d (a) fig.4 static drain-source on-state resistance vs. drain current (?? ) 1000 ta=125c ta=75c ta=25c ta=?25c v gs =?2.5v pulsed static drain-source on-state resistance : r ds (on) (m ? ) 024681012 0 50 100 150 200 250 300 350 gate-source voltage : ? v gs ( v) fig.5 static drain-source on-state resistance vs. gate-source voltage 400 i d =?0.75a i d =?1.5a ta=25c pulsed static drain-source on-state resistance : r ds (on) (m?) 0.1 1 10 10 100 drain current : ?i d (a) 1000 v gs =?2.5v v gs =?4.0v v gs =?4.5v ta=25c pulsed static drain-source on-state resistance : r ds (on) (m ? ) fig.6 static drain-source on-state resistance vs. drain current ( ) 0 0.5 1 1.5 2 0.01 0.1 1 source-drain voltage : ?v sd (v) fig.7 reverse drain current vs. source-drain current reverce drain current : ?i dr (a) 10 ta=125c ta=75c ta=25c ta=?25c v gs =0v pulsed 0.01 0.1 1 10 100 10 100 1000 drain-source voltage : ?v ds (v) fig.8 typical capacitance vs. drain-source voltage capacitance : c (pf) 10000 c iss c oss c rss ta=25c f=1mh z v gs =0v 0.01 0.1 1 10 1 10 100 drain current : ?i d (a) fig.9 switching characteristics switching time : t (ns) 1000 t d(off) t r t d(on) t f ta=25c v dd =?15v v gs =?4.5v r g =10? pulsed
qs5u26 transistor rev.b 4/4 0 0.1 0.2 0.3 0.4 0.5 0.1 1 10 100 1000 ?25c 25c 75c 125c forward voltage : v f (v) forward current : i f (ma) fig.10 forward current vs. forward voltage 0 10203040 0.0001 0.001 0.01 0.1 1 10 100 ?25c 25c 75c 125c reverse voltage : v r (v) reverse current : i r (ma) fig.11 reverse current vs. reverse voltage z notice sbd has a large reverse leak current compared to other type of diode. therefore; it would raise a junction temperature, and increase a reverse power loss. further rise of inside temperature would cause a thermal runaway. this built-in sbd has low v f characteristics and therefore, higher leak current. please consider enough the surrounding temperature, generating heat of mosfet and the reverse current.
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