unisonic technologies co., ltd up2790 power mosfet www.unisonic.com.tw 1 of 5 copyright ? 2014 unisonic technologies co., ltd qw-r502-339.c switching n- and p-channel power mosfet ? description the utc up2790 uses advanced technology to provide excellent r ds(on) , low gate charge and operation with low gate voltages. this device is suitable for use in motor drive application. ? features * low on-state resistance: n-channel: v gs =10v, i d =3a; r ds ( on ) = 28 m ? (max.) v gs =4.5v, i d =3a; r ds ( on ) = 40 m ? (max.) p-channel: v gs = -10v, i d =-3a; r ds ( on ) = 60 m ? (max.) v gs =-4.5v, i d =-3a; r ds ( on ) = 80 m ? (max.) * low input capacitance n-channel : c iss with 500 pf (typ.) p-channel : c iss with 460 pf (typ.) * built-in gate protection diode ? symbol ? ordering information ordering number package pin assignment packing 1234567 8 UP2790G-S08-R sop-8 s g s g d d d d tape reel note: pin assignment: g: gate d: drain s: source
up2790 power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-339.c ? marking ? pin configuration drain 1 8 7 6 5 1 2 3 4 gate 2 source 1 gate 1 source 2 drain 1 drain 2 drain 2
up2790 power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-339.c ? absolute maximum ratings (t a =25c, unless otherwise specified) n-channel parameter symbol ratings unit drain to source voltage (v gs =0v) v dss 30 v gate to source voltage (v ds =0v) v gss 20 v continuous drain current i d 6 a pulsed drain current (note 2) i dm 24 a single avalanche current (note 3) i as 6 a single avalanche energy (note 3) e as 3.6 mj power dissipation (note 4) p d 1.7 w junction temperature t j +150 c storage temperature t stg -55 ~ +150 c p-channel parameter symbol ratings unit drain to source voltage (v gs =0v) v dss -30 v gate to source voltage (v ds =0v) v gss 20 v drain current (dc) i d -6 a pulsed drain current (note 2) i dm -24 a single avalanche current (note 3) i as -6 a single avalanche energy (note 3) e as 3.6 mj power dissipation (note 4) p d 1.7 w junction temperature t j 150 c storage temperature t stg -55 ~ +150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. p w 10 s, duty cycle 1% 3. mounted on ceramic substrate of 2000 mm 2 x 1.6 mm 4. l = 0.1mh, vdd = 2 1 x v dss , rg = 25 ? , starting tj = 25c
up2790 power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-339.c ? electrical characteristics (t a =25c, unless otherwise specified) n-channel parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =250ua 30 v drain-source leakage current i dss v ds =30 v, v gs =0 v 10 a gate- source leakage current i gss v gs = 16 v, v ds =0 v 10 a on characteristics gate threshold voltage v gs ( th ) v ds =10v, i d =1ma 1.5 2.5 v static drain-source on-state resistance (note) r ds(on) v gs =10 v, i d =3 a 21 28 m ? v gs =4.5 v, i d =3 a 28 40 m ? v gs =4.0 v, i d =3 a 34 53 m ? dynamic parameters input capacitance c iss v ds =10 v, v gs =0 v, f=1mhz 500 pf output capacitance c oss 135 pf reverse transfer capacitance c rss 77 pf switching parameters turn-on delay time t d ( on ) v dd =15v, v gs =10 v i d =3 a, r g =10 ? 9.2 ns turn-on rise time t r 8.8 ns turn-off delay time t d ( off ) 28 ns turn-off fall-time t f 7.4 ns total gate charge q g v dd =24 v, v gs =10 v, i d =6 a 12.6 nc gate to source charge q gs 1.7 nc gate to drain charge q gd 3.8 nc source- drain diode ratings and characteristics drain-source diode forward voltage v sd i s = 6 a, v gs =0v (note) 0.85 v diode continuous forward current i s 6 a diode pulse current i sm 24 a p-channel parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =250ua -30 v drain-source leakage current i dss v ds =-30 v, v gs =0 v -10 a gate- source leakage current i gss v gs = 16 v, v ds =0 v 10 a on characteristics gate threshold voltage v gs ( th ) v ds =-10v, i d =-1ma -1.0 -2.5 v static drain-source on-state resistance (note) r ds(on) v gs =-10 v, i d =-3 a 43 60 m ? v gs =-4.5 v, i d =-3 a 58 80 m ? v gs =-4.0 v, i d =-3 a 65 110 m ? dynamic parameters input capacitance c iss v ds =-10 v, v gs =0 v, f=1.0mhz 460 pf output capacitance c oss 130 pf reverse transfer capacitance c rss 77 pf switching parameters turn-on delay time t d ( on ) v dd =-15v, v gs =-10 v i d =-3 a , r g =10 ? , 8.5 ns turn-on rise time t r 4.8 ns turn-off delay time t d ( off ) 42 ns turn-off fall-time t f 19 ns total gate charge q g v dd =-24 v, v gs =-10 v, i d =-6 a 11 nc gate source charge q gs 1.7 nc gate drain charge q gd 3.3 nc
up2790 power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-339.c ? electrical characteristics(cont.) parameter symbol test conditions min typ max unit source- drain diode ratings and characteristics drain-source diode forward voltage v sd i s = -6a, v gs =0v (note) 0.92 v diode continuous forward current i s -6 a diode pulse current i sm -24 a note: pulsed
up2790 power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-339.c utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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