2N7002KU ? silikron semiconductor co. , ltd . 20 12 . 0 4 . 20 version: 1. 0 page 1 of 7 www.silikron.com main product characteristics: features and benefits : description : absolute max rating : symbol parameter max. units i d @ tc = 25c continuous drain current, v gs @ 10v 0.3 a i dm pulsed drain current 1.2 p d @tc = 25c power dissipation 0.63 w v ds drain - source voltage 60 v v gs gate - to - source voltage 2 0 v t j t stg operating junction and storage temperature range - 55 to +1 5 0 c thermal resistance symbol characterizes typ. max. units r j a junction - to - ambient ( t 10s ) 200 /w v dss 60 v r ds (on) 3 (max . ) i d 0.3 a sot - 2 3 schematic diagram ? advanced mosf et process technology ? special designed for pwm, load switching and general purpose applications ? u ltra low on - resistance with low gate charge ? f ast switching and reverse body recovery ? esd rating 2 000v hbm ? 150 operating temperature it utilizes the latest processing techniq ues to ach ieve the high cell density and reduces the on - resistance with high repetitive avalanche rating . these features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of oth er applications . marking and pin assignment
2n7002k u ? silikron semiconductor co. , ltd . 20 12 . 04.20 version: 1. 0 page 2 of 7 www.silikron.com electrical characterizes @t a =25 unless otherwise specified symbol parameter min. typ. max . units conditions v ( b r) dss drain - to - source breakdown voltage 60 v v gs = 0v, id = 250a r ds(on) static drain - to - source on - resistance 1 . 6 3 v gs = 10 v, i d = 0.5 a 3.5 v gs = 5 v, i d = 0.05 a v gs(th) gate threshold voltage 1 2 .5 v v ds = v gs , i d = 250a i dss drain - to - source leakage current 1 a v ds = 60 v,v gs = 0v i gss gate - to - source forward leakage 1 00 na v gs = 5 v,v ds =0v 1 0 u a v gs = 20 v,v ds =0v t d(on) turn - on delay time 2 5 ns v gs =10v, vds= 30 v, id= 0.2 a, r gen = 10 t d(off) turn - off delay t ime 4 5 c iss input capacitance 40 pf v gs = 0v v ds = 25 v ? = 1m hz c oss output capacitance 1 6.6 c rss reverse transfer capacitance 9 .5 source - drain ratings and characteristics symbol parameter min. typ. max . units conditions i s continuous source current (body diode) 0. 3 a mosfet sy mbol showing the integral reverse p - n junction diode. i sm pulsed source current ( body diode ) 1.2 a v sd diode forward voltage 1. 3 v i s = 0.2 a, v gs =0v
2n7002k u ? silikron semiconductor co. , ltd . 20 12 . 04.20 version: 1. 0 page 3 of 7 www.silikron.com test circuits and waveforms switch wave forms: n otes : the maximum current rating is limited by bond - wires. repetitive rating; pulse width limited by max. junction temperature. the power dissipation pd is based on max. junction temperature , using junc tion - to - case thermal resistance . the valu e of r j a is measured with the device mounted on 1in 2 fr - 4 board with 2oz. copper, in a still air environment with ta =25c these curves are based on the junction - to - case thermal impedence which is measured with the device mounted to a lar ge heatsink, assuming a maximum junction temperature of t j(max) =1 5 0 c.
2n7002k u ? silikron semiconductor co. , ltd . 20 12 . 04.20 version: 1. 0 page 4 of 7 www.silikron.com fig ure 1 . power dissipation vs. case temperature t ypical electrical and thermal characteristics fig ure 2 .typical capacitance vs. drain - to - source voltage fig ure 3 . maximum effective transient thermal impedance, junction - to - case
2n7002k u ? silikron semiconductor co. , ltd . 20 12 . 04.20 version: 1. 0 page 5 of 7 www.silikron.com mechanical data
2n7002k u ? silikron semiconductor co. , ltd . 20 12 . 04.20 version: 1. 0 page 6 of 7 www.silikron.com ordering a nd marking information device marking: u7 2 package (available) sot - 23 operating temperature range c : - 55 to 1 50 oc devices per unit package type units/ t ape t ap es/inner box units/inner box inner boxes/carton box units/ carton box sot - 23 3000 10 30000 4 120000 reli ability test program test item conditions duration sample size high temperature reverse bias(htrb) t j =125 to 1 50 @ 80% of max v dss /v ces /vr 168 hours 500 hours 1000 hours 3 lots x 77 devices high temperature gate bias(htgb) t j =150 @ 100% of max v gss 16 8 hours 500 hours 1000 hours 3 lots x 77 devices
2n7002k u ? silikron semiconductor co. , ltd . 20 12 . 04.20 version: 1. 0 page 7 of 7 www.silikron.com attention: any and all silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life - s upport systems, aircraft's control systems, or other ap plications whose failure can be reasonably exp ected to result in serious physical and/or material damage. consult with your silikron representative nearest you before using any silikron products descr ibed or contained herein in such applications. silikron assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all silikron products described or contained herein. specifications of any and all silikron products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customers products or equipment. to verify s ymptoms and states that cannot be evaluated in an independent device, th e customer should a lways evaluate and test devices mounted in the customers products or equipment. silikron semiconductor co.,ltd. strives to supply high - quality high - reliability products. however, any and all semiconductor products fail with some probability. it is pos sible that these probabilistic failures could give rise to accident s or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that th ese kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all silikron products(inclu ding technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accorda nce with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of silikron semiconductor co.,ltd. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. silikron believes information herein is accurate and re liable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. any and all information described or contained herein are subject to change without notice due to pr oduct/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the silikron product that you intend to use. this catalog provides information as of dec, 2008. specifications and information herein are subject to change without notice. customer service worldwide sales and service : sales@ silikron .com technical support: technical@ silikron .com suzhou silikron semiconductor corp. building 11a suchun industrial square, 428# xinglong street, suzhou p.r. chin a tel: (86 - 512 ) 62560688 fax: (86 - 512) 65160705 e - mail: sales@ silikron .com
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