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warp2 series igbt with ultrafast soft recovery diode irgp50b60pdpbf 1 www.irf.com 12/1/04 features ? npt technology, positive temperature coefficient ? lower v ce (sat) ? lower parasitic capacitances ? minimal tail current ? hexfred ultra fast soft-recovery co-pack diode ? tighter distribution of parameters ? higher reliability benefits ? parallel operation for higher current applications ? lower conduction losses and switching losses ? higher switching frequency up to 150khz e g n-channel c v ces = 600v v ce(on) typ. = 2.00v @ v ge = 15v i c = 33a equivalent mosfet parameters r ce(on) typ. = 61m ? i d (fet equivalent) = 50a applications ? telecom and server smps ? pfc and zvs smps circuits ? uninterruptable power supplies ? consumer electronics power supplies ? lead- free to-247ac g c e smps igbt absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 75 i c @ t c = 100c continuous collector current 42 i cm pulse collector current (ref. fig. c.t.4) 150 i lm clamped inductive load current 150 a i f @ t c = 25c diode continous forward current 50 i f @ t c = 100c diode continous forward current 25 i frm maximum repetitive forward current 100 v ge gate-to-emitter voltage 20 v p d @ t c = 25c maximum power dissipation 370 w p d @ t c = 100c maximum power dissipation 150 t j operating junction and -55 to +150 t stg storage temperature range c soldering temperature for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) thermal resistance parameter min. typ. max. units r jc (igbt) thermal resistance junction-to-case-(each igbt) ??? ??? 0.34 c/w r jc (diode) thermal resistance junction-to-case-(each diode) ??? ??? 0.64 r cs thermal resistance, case-to-sink (flat, greased surface) ??? 0.50 ??? r ja thermal resistance, junction-to-ambient (typical socket mount) ??? ??? 40 weight ??? 6.0 (0.21) ??? g (oz)
irgp50b60pdpbf 2 www.irf.com notes: r ce(on) typ. = equivalent on-resistance = v ce(on) typ./ i c , where v ce(on) typ.= 2.00v and i c =33a. i d (fet equivalent) is the equivalent mosfet i d rating @ 25c for applications up to 150khz. these are provided for comparison purposes (only) with equivalent mosfet sol utions. v cc = 80% (v ces ), v ge = 20v, l = 28 h, r g = 22 ?. pulse width limited by max. junction temperature. energy losses include "tail" and diode reverse recovery, data generated with use of diode 30eth06. c oes eff. is a fixed capacitance that gives the same charging time as c oes while v ce is rising from 0 to 80% v ces . c oes eff.(er) is a fixed capacitance that stores the same energy as c oes while v ce is rising from 0 to 80% v ces . electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions ref.fig v (br)ces collector-to-emitter breakdown voltage 600 ? ? v v ge = 0v, i c = 500a ? v (br)ces / ? t j temperature coeff. of breakdown voltage ?0.61?v/c v ge = 0v, i c = 1ma (25c-125c) r g internal gate resistance ? 1.2 ? ? 1mhz, open collector ?2.02.2 i c = 33a, v ge = 15v 4, 5,6,8,9 v ce(on) collector-to-emitter saturation voltage ? 2.4 2.6 v i c = 50a, v ge = 15v ?2.62.9 i c = 33a, v ge = 15v, t j = 125c ?3.23.6 i c = 50a, v ge = 15v, t j = 125c v ge(th) gate threshold voltage 3.0 4.0 5.0 v i c = 250a 7,8,9 ? v ge(th) / ? tj threshold voltage temp. coefficient ? -7.07 ? mv/c v ce = v ge , i c = 1.0ma gfe forward transconductance ? 42 ? s v ce = 50v, i c = 33a, pw = 80s i ces collector-to-emitter leakage current ? 5.0 500 a v ge = 0v, v ce = 600v ?1.0?ma v ge = 0v, v ce = 600v, t j = 125c ?1.31.7 i f = 25a, v ge = 0v v fm diode forward voltage drop ? 1.5 2.0 v i f = 50a, v ge = 0v 10 ?1.31.7 i f = 25a, v ge = 0v, t j = 125c i ges gate-to-emitter leakage current ? ? 100 na v ge = 20v, v ce = 0v switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units ref.fig qg total gate charge (turn-on) ? 240 360 i c = 33a 17 q gc gate-to-collector charge (turn-on) ? 41 82 nc v cc = 400v ct1 q ge gate-to-emitter charge (turn-on) ? 84 130 v ge = 15v e on turn-on switching loss ? 360 590 i c = 33a, v cc = 390v ct3 e off turn-off switching loss ? 380 420 j v ge = +15v, r g = 3.3 ? , l = 210h e total total switching loss ? 740 960 tj = 25c t d(on) turn-on delay time ? 34 44 i c = 33a, v cc = 390v ct3 t r rise time ? 26 36 ns v ge = +15v, r g = 3.3 ? , l = 210h t d(off) turn-off delay time ? 130 140 t j = 25c t f fall time ? 43 56 e on turn-on switching loss ? 610 880 i c = 33a, v cc = 390v ct3 e off turn-off switching loss ? 460 530 j v ge = +15v, r g = 3.3 ? , l = 210h 11,13 e total total switching loss ? 1070 1410 t j = 125c wf1,wf 2 t d(on) turn-on delay time ? 33 43 i c = 33a, v cc = 390v ct3 t r rise time ? 26 36 ns v ge = +15v, r g = 3.3 ? , l = 200h 12,14 t d(off) turn-off delay time ? 140 160 t j = 125c wf1,wf 2 t f fall time ? 50 65 c ies input capacitance ? 4750 ? v ge = 0v 16 c oes output capacitance ? 390 ? v cc = 30v c res reverse transfer capacitance ? 58 ? pf f = 1mhz c oes eff. effective output capacitance (time related) ?280? v ge = 0v, v ce = 0v to 480v 15 c oes eff. (er) effective output capacitance (energy related) ?190? t j = 150c, i c = 150a 3 rbsoa reverse bias safe operating area full square v cc = 480v, vp =600v ct2 rg = 22 ? , v ge = +15v to 0v t rr diode reverse recovery time ? 50 75 ns t j = 25c i f = 25a, v r = 200v, 19 ? 105 160 t j = 125c di/dt = 200a/s q rr diode reverse recovery charge ? 112 375 nc t j = 25c i f = 25a, v r = 200v, 21 ? 420 4200 t j = 125c di/dt = 200a/s i rr peak reverse recovery current ? 4.5 10 a t j = 25c i f = 25a, v r = 200v, 19,20,21,22 ?8.015 t j = 125c di/dt = 200a/s ct5 conditions
irgp50b60pdpbf www.irf.com 3 fig. 1 - maximum dc collector current vs. case temperature fig. 2 - power dissipation vs. case temperature fig. 3 - reverse bias soa t j = 150c; v ge =15v fig. 4 - typ. igbt output characteristics t j = -40c; tp = 80s fig. 5 - typ. igbt output characteristics t j = 25c; tp = 80s fig. 6 - typ. igbt output characteristics t j = 125c; tp = 80s 0 20 40 60 80 100 120 140 160 t c (c) 0 50 100 150 200 250 300 350 400 p t o t ( w ) 0246810 v ce (v) 0 40 80 120 160 200 240 280 320 i c e ( a ) v ge = 15v vge = 12v vge = 10v vge = 8.0v vge = 6.0v 25 50 75 100 125 150 t c , case temperature (c) 0 10 20 30 40 50 60 70 80 i c , c o l l e c t o r c u r r e n t ( a ) limited by package 10 100 1000 v ce (v) 1 10 100 1000 i c a ) 0246810 v ce (v) 0 40 80 120 160 200 240 280 320 i c e ( a ) v ge = 15v vge = 12v vge = 10v vge = 8.0v vge = 6.0v 02468101214161820 v ce (v) 0 40 80 120 160 200 240 280 320 i c e ( a ) v ge = 15v vge = 12v vge = 10v vge = 8.0v vge = 6.0v
irgp50b60pdpbf 4 www.irf.com fig. 8 - typical v ce vs. v ge t j = 25c fig. 9 - typical v ce vs. v ge t j = 125c fig. 12 - typ. switching time vs. i c t j = 125c; l = 200h; v ce = 390v, r g = 3.3 ? ; v ge = 15v. diode clamp used: 30eth06 (see c.t.3) fig. 11 - typ. energy loss vs. i c t j = 125c; l = 200h; v ce = 390v, r g = 3.3 ? ; v ge = 15v. diode clamp used: 30eth06 (see c.t.3) fig. 10 - maximum. diode forward characteristics tp = 80s fig. 7 - typ. transfer characteristics v ce = 50v; tp = 10s 0 5 10 15 20 v ge (v) 0 100 200 300 400 500 600 i c e ( a ) t j = 25c t j = 125c t j = 125c t j = 25c 0 5 10 15 20 v ge (v) 0 5 10 15 20 25 v c e ( v ) i ce = 15a i ce = 33a i ce = 50a 0 5 10 15 20 v ge (v) 0 5 10 15 20 25 v c e ( v ) i ce = 15a i ce = 33a i ce = 50a 10 20 30 40 50 60 70 i c (a) 200 400 600 800 1000 1200 1400 1600 1800 e n e r g y ( j ) e off e on 0 10 20 30 40 50 60 70 i c (a) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 1 10 1 00 0.6 1.0 1.4 1.8 2.2 2.6 fm t = 150c t = 125c t = 25c j j j a forward voltage drop - v (v)

irgp50b60pdpbf www.irf.com 5 fig. 14 - typ. switching time vs. r g t j = 125c; l = 200h; v ce = 390v, i ce = 33a; v ge = 15v diode clamp used: 30eth06 (see c.t.3) fig. 13 - typ. energy loss vs. r g t j = 125c; l = 200h; v ce = 390v, i ce = 33a; v ge = 15v diode clamp used: 30eth06 (see c.t.3) fig. 16 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz fig. 15 - typ. output capacitance stored energy vs. v ce fig. 17 - typical gate charge vs. v ge i ce = 33a fig. 18 - normalized typ. v ce(on) vs. junction temperature i c = 33a, v ge = 15v 0 10 20 30 40 r g ( ? ) 200 400 600 800 1000 1200 1400 1600 1800 e n e r g y ( j ) e on e off 0 10 20 30 40 r g ( ? ) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 0 100 200 300 400 500 600 700 voltage (v) 0 5 10 15 20 25 30 35 e o e s ( j ) 0 100 200 300 400 500 v ce (v) 10 100 1000 10000 c a p a c i t a n c e ( p f ) cies coes cres 0 50 100 150 200 250 300 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) v ce = 480v -60 -40 -20 0 20 40 60 80 100 120 140 160 t c (c) 0.5 0.8 1.0 1.3 1.5 n o r m a l i z e d v c e ( o n )
irgp50b60pdpbf 6 www.irf.com

20 40 60 80 1 00 1 20 1 40 100 1000 f di /dt - (a/s) a i = 50a i = 25a i = 10a f f f v = 200v t = 125c t = 25c r j j 0 5 1 0 1 5 2 0 2 5 3 0 100 1000 f di /dt - (a/s) a i = 50a i = 25a i = 10a v = 200v t = 125c t = 25c r j j f f f 0 200 400 600 800 1 000 1 200 1 400 100 1000 f di /dt - (a/s) a i = 50a i = 25a i = 10a v = 200v t = 125c t = 25c r j j f f f 100 1000 1 0000 100 1000 f di /dt - (a/s) a i = 50a i = 25a i = 10a f f f v = 200v t = 125c t = 25c r j j
irgp50b60pdpbf www.irf.com 7 fig. 24. maximum transient thermal impedance, junction-to-case (diode) fig 23. maximum transient thermal impedance, junction-to-case (igbt) fig. 25 - forward soa, t c = 25c; t j 150c 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 0.0789 0.000277 0.2614 0.040918 j j 1 1 2 2 r 1 r 1 r 2 r 2 c ci= i / ri ci= i / ri 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 0.0733 0.000420 0.1301 0.002274 0.1358 0.023026 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c ci= i / ri ci= i / ri 1 10 100 1000 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by v ce (on) tc = 25c tj = 150c single pulse 100sec 1msec 10msec 100msec
irgp50b60pdpbf 8 www.irf.com fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit l rg 80 v dut 480v 1k vcc du t 0 l fig.c.t.4 - resistive load circuit rg vcc dut r = v cc i cm fig.c.t.3 - switching loss circuit fig. c.t.5 - reverse recovery parameter test circuit reverse recovery circuit irfp250 d.u.t. l = 70h v = 200v r 0.01 ? g d s dif/dt adjust p fc diode l rg vc c dut / driver
irgp50b60pdpbf www.irf.com 9 fig. wf1 - typ. turn-off loss waveform @ t j = 25c using fig. ct.3 fig. wf2 - typ. turn-on loss waveform @ t j = 25c using fig. ct.3 fig. wf3 - reverse recovery waveform and definitions

t a t b t rr q rr i f i rrm i rrm 0.5 di(rec)m/dt 0.75 i rrm 5 4 3 2 0 1 di /dt f !
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# -100 0 100 200 300 400 500 600 700 -0.05 0 0.05 0.1 0.15 time (us) vce ( v) -5 0 5 10 15 20 25 30 35 ice (a) tf eo f f lo s s 90% ice 5% vce 5% ice vce ic e -100 0 100 200 300 400 500 600 700 3.95 4.05 4.15 4.25 time (us) vce ( v) -10 0 10 20 30 40 50 60 70 ice (a) eo n loss tr 90% ice 10% ice 5% vce vce ice
irgp50b60pdpbf 10 www.irf.com ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 12/04 data and specifications subject to change without notice. this product has been designed and qualified for industrial market. qualification standards can be found on ir?s web site. to-247ac package is not recommended for surface mount application.
dimensions are shown in millimeters (inches)
example: as sembled on ww 35, 2000 lot code 5657 wit h as s e mb l y t his is an irfpe30 in the assembly line "h" 035h logo international rect if ier irfpe30 lot code as s e mb l y 56 57 part number dat e code ye ar 0 = 200 0 we e k 35 line h note: "p" in assembly line position indicates "lead-free"
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/

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