SSRF50P04-16 50a, -40v, r ds(on) 16m p-ch enhancement mode power mosfet elektronische bauelemente 30-nov-2010 rev.a page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. rohs compliant product a suffix of ?-c? specifies halogen free description these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical applications ar e dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. features ? low r ds(on) provides higher efficiency and extends battery life. ? low thermal impedance copper leadframe ito-220 saves board space. ? fast switching speed. ? high performance trench technology. product summary SSRF50P04-16 v ds (v) r ds (on) (m ? ? i d (a) -40 16@v gs = -10v 50 28@v gs = -4.5v 38 absolute maximum ratings (t a = 25 c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds -40 v gate-source voltage v gs 20 v continuous drain current 1 i d @t c =25 50 a pulsed drain current 2 i dm 100 a continuous source current (diode conduction) 1 i s -30 a total power dissipation 1 p d @t c =25 60 w operating junction and storage temperature range t j , t stg -55 ~ 175 c thermal resistance ratings maximum thermal resistance junction-ambient 1 r ja 50 c / w maximum thermal resist ance junction-case r jc 3.0 c / w notes 1 package limited. 2 pulse width limited by maximum junction temperature. ito-220 dimensions in millimeters a m j k l l g f b n d e c h ref. millimete r ref. millimete r min. max. min. max. a 15.00 15.60 h 3.00 3.80 b 9.50 10.50 j 0.90 1.50 c 13.00 min k 0.50 0.90 d 4.30 4.70 l 2.34 2.74 e 2.50 3.10 m 2.50 2.90 f 2.40 2.80 n ? ? ? ? ? gate ? ? source ? ? drain
SSRF50P04-16 50a, -40v, r ds(on) 16m p-ch enhancement mode power mosfet elektronische bauelemente 30-nov-2010 rev.a page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a = 25 c unless otherwise specified) parameter symbo min. typ. max. unit test conditions static gate-threshold voltage v gs(th) -1 - - v v ds = v gs, i d = -250 a gate-body leakage i gss - - 100 na v ds = 0v, v gs = 25v zero gate voltage drain current i dss - - -1 a v ds = -24v, v gs = 0v - - -5 v ds = -24v,v gs = 0v,t j =55c on-state drain current 1 i d(on) -41 - - a v ds = -5v, v gs = -10v drain-source on-resistance 1 r ds(on) - - 16 m ? v gs = -10v, i d = -1 a - - 28 v gs = -4.5v, i d = -1 a forward transconductance 1 g fs - 31 - s v ds = -15v, i d = -1 a diode forward voltage v sd - -0.7 - v i s = -41 a, v gs = 0 v dynamic 2 total gate charge q g - 25 - nc v ds = -15 v v gs = -4.5 v i d = -1 a gate-source charge q gs - 5.2 - gate-drain charge q gd - 17 - turn-on delay time t d(on) - 15 - ns v dd = -15 v i d = -41 a v gen = 10 v r l = 15 ?? r g = 6 ? rise time t r - 44 - turn-off delay time t d(off) - 46 - fall time t f - 89 - notes 1 pulse test pulse width Q 300 s, duty cycle Q 2 . 2 guaranteed by design, not s ubject to production testing.
|
