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  unisonic technologies co., ltd imx17 dual transistor www.unisonic.com.tw 1 of 4 copyright ? 2012 unisonic technologies co., ltd qw-r215-001.d general purpose dual transistor ? features * *two mmbt2222a chips in an smt package . * transistor elements are independent, eliminating interference. * high collector current. ic=500ma. * mounting cost an area can be cut in half. ? equivalent circuits ? ordering information ordering number package pin assignment packing lead free halogen free 1234 5 6 imx17l-ag6 -r imx17g-ag6-r sot-26 e1 b1 c2 e2 b2 c1 tape reel note: pin assignment: b: base c: collector e: emitter ? marking
imx17 dual transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r215-00.d ? absolute maximum ratings (t a =25c) parameter symbol rating unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 5 v collector current i c 500 ma collector power dissipation p d 300 (total) mw junction temperature t j 150 c storage temperature t stg -55~+150 c note: 1. 200mw per element must not be exceeded. 2. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (t a =25c) parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo i c =100a 60 v collector-emitter breakdown voltage bv ceo i c =1ma 50 v emitter-base breakdown voltage bv ebo i e =100a 5 v collector cut-off current i cbo v cb =30v 0.1 a emitter cut-off current i ebo v eb =4v 0.1 a collector-emitter satu ration voltage v ce ( sat ) i c =500ma, i b =50ma 0.6 v dc current transfer ratio h fe v ce = 3v, i c = 100ma(note) 120 390 transition frequency (note) f t v ce =5v, i e =-20ma, f=100mhz 250 mhz output capacitance c ob v cb = 10v, i e =0a, f=1mhz 7 pf note: measured using pulse current.
imx17 dual transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r215-00.d ? electrical characteristic curves collector current : i c (ma) grounded emitter propagation characteristics base to emitter voltage : v be (v) collector to emitter voltage : v be (v) grounded emitter output characteristics dc current gain vs. collector current ( ) dc current gain : h fe collector current :i c (ma) collector current :i c (ma) dc current gain vs. collector current ( ) collector current : i c (ma) dc current gain : h fe collector saturation voltage : v ce (sat) collector-emitter saturation voltage vs. collector current collector current : i c (ma) collector current : i c (ma) collector-emitter saturation voltage vs. collector current collector saturation voltage : v ce (sat) (v) (v)
imx17 dual transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r215-00.d ? electrical characteristic curves(cont.) utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.


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