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hexfet ? power mosfet d1 d1 d2 d2 g1 s2 g2 s1 top view 8 1 2 3 4 5 6 7 so-8
features benefits industry-standard pinout so-8 package ? multi-vendor compatibility compatible with existing surface mount techniques easier manufacturing rohs compliant, halogen-free environmentally friendlier msl1, industrial qualification increased reliability thermal resistance parameter max. units r ja maximum junction-to-ambient 62.5 c/w absolute maximum ratings parameter max. units v ds drain-source voltage -20 v i d @ t a = 25c continuous drain current, v gs @ -4.5v -9.0 i d @ t a = 70c continuous drain current, v gs @ -4.5v -7.1 a i dm pulsed drain current -71 p d @t a = 25c maximum power dissipation 2.0 w p d @t a = 70c maximum power dissipation 1.3 w linear derating factor 16 mw/c v gs gate-to-source voltage 12 v t j , t stg junction and storage temperature range -55 to + 150 c v ds -20 v r ds(on) max (@v gs = -4.5v) 0.018 q g (typical) 42 nc i d (@t a = 25c) -9.0 a

! form quantity irf7324pbf-1 so-8 tape and reel 4000 irf7324trpbf-1 package type standard pack orderable part number base part number

! parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source current integral reverse (body diode) p-n junction diode. v sd diode forward voltage ??? ??? -1.2 v t j = 25c, i s = -2.0a, v gs = 0v t rr reverse recovery time ??? 180 270 ns t j = 25c, i f = -2.0a q rr reverse recovery charge ??? 300 450 nc di/dt = -100a/ s source-drain ratings and characteristics """ """ """ """ -71 # 2.0 $ parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -20 ??? ??? v v gs = 0v, i d = -250 a v (br)dss / t j breakdown voltage temp. coefficient ??? -0.02 ??? v/c reference to 25c, i d = -1ma ??? ??? 0.018 v gs = -4.5v, i d = -9.0a """ ??? 0.026 v gs = -2.5v, i d = -7.7a v gs(th) gate threshold voltage -0.45 ??? -1.0 v v ds = v gs , i d = -250 a g fs forward transconductance 19 ??? ??? s v ds = -10v, i d = -9.0a ??? ??? -1.0 v ds = -16v, v gs = 0v ??? ??? -25 v ds = -16v, v gs = 0v, t j = 125c gate-to-source forward leakage ??? ??? -100 v gs = -12v gate-to-source reverse leakage ??? ??? 100 v gs = 12v q g total gate charge ??? 42 63 i d = -9.0a q gs gate-to-source charge ??? 7.1 11 nc v ds = -16v q gd gate-to-drain ("miller") charge ??? 12 18 v gs = -5.0v t d(on) turn-on delay time ??? 17 ??? v dd = -10v t r rise time ??? 36 ??? i d = -1.0a t d(off) turn-off delay time ??? 170 ??? r g = 6.0 t f fall time ??? 190 ??? r d = 10 c iss input capacitance ??? 2940 ??? v gs = 0v c oss output capacitance ??? 630 ??? pf v ds = -15v c rss reverse transfer capacitance ??? 420 ??? ? = 1.0mhz electrical characteristics @ t j = 25c (unless otherwise specified) %$ r ds(on) static drain-to-source on-resistance i dss drain-to-source leakage current $ repetitive rating; pulse width limited by max. junction temperature. pulse width 300 s & duty cycle ' surface mounted on fr-4 board, 10sec s d g
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fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -4.5v -9.0a 0.01 0.1 1 10 100 1000 0.1 1 10 100 20 s pulse width t = 25 c j top bottom vgs -4.5v -3.5v -2.5v -2.0v -1.5v -1.3v -1.0v -0.75v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -0.75v 0.01 0.1 1 10 100 1000 0.1 1 10 100 20 s pulse width t = 150 c j top bottom vgs -4.5v -3.5v -2.5v -2.0v -1.5v -1.3v -1.0v -0.75v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -0.75v 0.1 1 10 100 0.5 1.0 1.5 2.0 2.5 3.0 3.5 v = -15v 20 s pulse width ds -v , gate-to-source voltage (v) -i , drain-to-source current (a) gs d t = 25 c j t = 150 c j

! fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 0 1000 2000 3000 4000 5000 -v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 -v ,source-to-drain voltage (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 1000 0.1 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c -v , drain-to-source voltage (v) -i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms 0 10 20 30 40 50 60 0 2 4 6 8 10 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs i = d -9.0a v = -16v ds
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fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 0.0 2.0 4.0 6.0 8.0 10.0 t , case temperature ( c) -i , drain current (a) c d * *
1 0.1 % * * +, + - v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10a. switching time test circuit fig 10b. switching time waveforms

! fig 13. typical on-resistance vs. drain current fig 12. typical on-resistance vs. gate voltage 0 102030405060 -i d , drain current (a) 0.00 0.02 0.04 0.06 0.08 0.10 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ) v gs = -4.5v v gs = -2.5v fig 14b. gate charge test circuit fig 14a. basic gate charge waveform q g q gs q gd v g charge d.u.t. v ds i d i g -3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 2.0 2.5 3.0 3.5 4.0 4.5 v gs, gate -to -source voltage (v) 0.010 0.015 0.020 0.025 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ) i d = -9.0a
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so-8 package outline dimensions are shown in milimeters (inches) e1 d e y b a a1 h k l .189 .1497 0 .013 .050 basic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 b as ic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 min max millimeters inches min max dim 8 e c .0075 .0098 0.19 0.25 .025 basic 0.635 bas ic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] cab e1 a a1 8x b c 0.10 [.004] 4 3 12 f oot pr i nt 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4. ou t l i ne conf or ms t o j e de c ou t l i ne ms -012aa. not e s : 1. dime ns ioning & t ole rancing pe r as me y14.5m-1994. 2. cont rol ling dimens ion: mil l ime t er 3. dimens ions are s hown in millimet ers [inches ]. 5 dime ns ion doe s not incl ude mol d prot rus ions . 6 dime ns ion doe s not incl ude mol d prot rus ions . mold prot rus ions not t o e xcee d 0.25 [.010]. 7 dimens ion is t he lengt h of lead f or s oldering t o a subs t rat e. mold prot rus ions not t o e xcee d 0.15 [.006]. 8x 1.78 [.070] so-8 part marking information (lead-free) dat e code (yww) xxxx international rectifier logo f7101 y = las t digit of t he year part number lot code ww = we e k example: this is an irf7101 (mosfet) p = des ignates lead-free product (optional) a = assembly site code note: for the most current drawing please refer to ir website at: http://www.irf.com/package/

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! 330. 00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel (dimensions are shown in milimeters (inches)) note: for the most current drawing please refer to ir website at: http://www.irf.com/package/ ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability ?? applicable version of jedec standard at the time of product release ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ ms l 1 (per je de c j-s td-020d ?? ) rohs c ompliant yes qualification information ? qualification level industrial (per jedec jes d47f ?? guidelines) moisture sensitivity level so-8 date comments ? corrected part number from" irf7324pbf-1" to "irf7324trpbf-1" -all pages ? removed the "irf7324pbf-1" bulk part number from ordering information on page1 revision history 10/16/2014

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