ms f 6n70 70 0v n - ch a n n e l m o s f e t br u c k e w e l l t e c h n o l o g y co r p o r a t i o n re v . b - 2013 ge n e r a l de s c r i p t i on the m s f 6n 70 is a n - ch a n n e l e n h a n ce m e n t - mo d e m o s f e t , p r o v i d i n g th e d e s ig n e r w ith th e b e s t c o m b in a tio n o f f a s t s w itc h in g , r u g g e d iz e d d e v ic e de s i gn , l o w o n - res i s t a n c e a n d c os t ef f ec t i v en es s . t h e t o - 220f p ac k ag e i s un i v e r s a l l y p r e f e r r e d f o r a l l c om m erc i a l - in d u s tr ia l a p p lic a tio n s f ea t u r es ? low o n r es i s t a n c e ? s i m p l e d ri v e r eq u i rem en t ? low g a t e c h a rg e ? f a s t s w i t c h i n g c h a ra c t eri s t i c ? r oh s c om p l i a n t / h a l o g e n fr e e pa c k a g e av ai l ab l e abs o l u t e m ax i m u m r at i n g s (t c = 2 5 c u n l es s ot h erw i s e n ot ed ) parameter sy m b o l value unit drain - source voltage vd s 700 v continuous drain current @ tc=25 c id 6. 0 a continuous drain current @ tc=100 c id 3. 5 a pulsed drain current idm 22 a gate - source voltage vg s ?0 v single pulsed avalanche en ergy ea s 350 mj avalanche current ia r 5. 5 a repetitive avalanche energy ea r 14. 7 mj peak diode recovery dv/dt dv/dt 5. 5 v/ns power dissipation (tc=25 c) pd 48 w power dissipation (tc=100 c) 0. 38 w operating junction and storage temperature tj, tstg - 55~+150 ? note: 1. r e p e t i t i v e r at i ng : p u l s e w i d t h l i m i t e d b y m ax i m u m j u nc t i o n t e m p e r at u r e 2. i a s =5. 5a , v d d =50v , r g =25 , s t ar t i ng tj =25 c 3. i s d 5. 5a , d i / d t 300a / s , v d d b v d s s , s t ar t i ng tj =25 c 4. p u l s e te s t : p u l s e w i d t h 300 s , d u t y c y c l e 2 % 5. e s s e nt i al l y i nd e p e nd e nt o f o p e r at i ng te m p e r at u r e http://
ms f 6n70 70 0v n - channel mosfet bruckewell technology corporation rev. b - 2013 characteristics (tc=25 c, unless otherwise specified) symbol test conditions min. typ. max. unit static characteristics vgs vds = vgs, id=250 a 2.0 - 4.0 v *rds(on) vgs =10v,id =2.8a - 1.5 1. 8 bvdss vgs=0, id=250 a 700 - - v ? bvdss/ ? tj reference to 25 c, id=250 a 0.70 idss vds =700v,vgs =0v - - 1 ua vds =560v, vgs =0, tj=125 c - - 10 igssf vgs =30v,vds =0v - - 100 na igssr vgs = - 30v,vds =0v - - - 100 na dynamic characteristics ciss vgs=0v, vds=25v, f=1mhz - 1100 1500 pf coss - 110 150 crss - 12 16 td(on) vds =350v,id =5.5a, rg = 25 - 10 30 ns tr - 35 80 td(off) - 45 100 tf - 40 90 qg vds =560v,id =5.5a, vgs =10v - 29 37 nc qgs - 5 - qgd - 11 - source - drain diode characteristics is - - 5.5 a ism - - 22 vsd is = 5.5a, vgs = 0 v - - 1.5 v trr is = 5.5 a, vgs = 0 v dif/dt = 100 a/ s - 390 - ns qrr - 3.6 - nc
ms f 6n70 70 0v n - channel mosfet bruckewell technology corporation rev. b - 2013 characteristic curves figure 1. on region characteristics figure 2. transfer characteristics figure 3. on resistance variation vs drain current and gate voltage figure 4. body diode forward voltage variation with source current and temperature figure 5. capacitance characteristics figure 6. gate charge characte ristics
ms f 6n70 70 0v n - channel mosfet bruckewell technology corporation rev. b - 2013 characteristic curves figure 7. breakdown voltage variation vs. temperature figure 8. on - resistance variation vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. tra nsient thermal response curve
ms f 6n70 70 0v n - channel mosfet bruckewell technology corporation rev. b - 2013 fig 12. resistive switching test circuit & waveforms fig 13. gate charge test circuit & waveform fig 14. unclamped inductive switching test circuit & waveforms
ms f 6n70 70 0v n - channel mosfet bruckewell technology corporation rev. b - 2013 fig 15. peak diode recovery dv/dt test circuit & waveforms
ms f 6n70 70 0v n - channel mosfet bruckewell technology corporation rev. b - 2013 package dimensions dimensions in millimeters
ms f 6n70 70 0v n - channel mosfet bruckewell technology corporation rev. b - 2013 legal disclaimer notice disclaimer all product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. bruc kewell technology inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?ruckewell?, disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any ot her disclosure relating to any product. bruckewell makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, bruckewell disclaims (i) any and all liability arising out of the application or use of any product. (ii) any and all liability, including without limitation special, consequential or incidental damages. (iii) any and all implied warranties, inclu ding warranties of fitness for particular purpose, non - infringement and merchantability. statements regarding the suitability of products for certain types of applications are based on bruckewell s knowledge of typical requirements that are often placed o n bruckewell products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customer? responsibility to validate that a particular product with the properties describ ed in the product specification is suitable for use in a particular application. parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. product specifications do not expand or otherwi se modify bruckewell s terms and conditions of purchase, including but not limited to the warranty expressed therein.
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