? semiconductor components industries, llc, 2014 october, 2014 ? rev. 0 1 publication order number: NTMFS4H013NF/d NTMFS4H013NF power mosfet 25 v, 269 a, single n?channel, so?8fl features ? integrated schottky diode ? optimized design to minimize conduction and switching losses ? optimized package to minimize parasitic inductances ? optimized material for improved thermal performance ? these devices are pb?free, halogen free/bfr free and are rohs compliant applications ? high performance dc-dc converters ? system voltage rails ? netcom, telecom ? servers & point of load maximum ratings (t j = 25 c unless otherwise stated) parameter symbol value units drain-to-source voltage v dss 25 v gate-to-source voltage v gs 20 v continuous drain current r ja (t a = 25 c, note 1) i d 43 a power dissipation r ja (t a = 25 c, note 1) p d 2.70 w continuous drain current r jc (t c = 25 c, note 1) i d 269 a power dissipation r jc (t c = 25 c, note 1) p d 104 w pulsed drain current (t p = 10 s) i dm 505 a single pulse drain-to-source avalanche energy (note 1) (i l = 51 a pk , l = 0.3 mh) e as 390 mj drain to source dv/dt dv/dt 7 v/ns maximum junction temperature t j(max) 150 c storage temperature range t stg ?55 to 150 c lead temperature soldering reflow (smd styles only), pb-free versions (note 2) t sld 260 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. values based on copper area of 645 mm 2 (or 1 in 2 ) of 2 oz copper thickness and fr4 pcb substrate. 2. for more information, please refer to our soldering and mounting t echniques reference manual, solderrm/d. 3. this is the absolute maximum rating. parts are 100% uis tested at t j = 25 c, v gs = 10 v, i l = 33 a, e as = 164 mj. thermalcharacteristics parameter symbol max units thermal resistance, junction-to-ambient (note 1 and 4) junction-to-case (note 1 and 4) r ja r jc 40.0 1.5 c/w 4. thermal resistance r ja and r jc as defined in jesd51?3. www. onsemi.com v gs max r ds(on) typ q gtot 4.5 v 1.4 m 26 nc g (1, 2, 3) n?channel mosfet d 10 v 0.9 m 56 nc (4) s (5?8) see detailed ordering and shipping information on page 5 o f this data sheet. ordering information pin connections so8?fl (5 x 6 mm) (top view) (bottom view)
NTMFS4H013NF www. onsemi.com 2 electrical characteristics (t j = 25 c unless otherwise specified) parameter symbol test condition min typ max unit off characteristics drain?to?source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 25 v drain?to?source breakdown voltage temperature coefficient v (br)dss / t j 34.5 mv/ c zero gate voltage drain current i dss v gs = 0 v, v ds = 20 v t j = 25 c 500 a gate?to?source leakage current i gss v ds = 0 v, v gs = +20 v +100 na on characteristics (note 5) gate threshold voltage v gs(th) v gs = v ds , i d = 250 a 1.2 2.1 v negative threshold temperature coefficient v gs(th) /t j 4.6 mv/ c drain?to?source on resistance r ds(on) v gs = 10 v i d = 30 a 0.72 0.9 m v gs = 4.5 v i d = 30 a 1.1 1.4 forward transconductance g fs v ds = 12 v, i d = 15 a 119 s charges, capacitances & gate resistance input capacitance c iss v gs = 0 v, f = 1 mhz, v ds = 12 v 3923 pf output capacitance c oss 2537 reverse transfer capacitance c rss 114 total gate charge q g(tot) v gs = 4.5 v, v ds = 12 v; i d = 30 a 26 nc threshold gate charge q g(th) 2.9 gate?to?source charge q gs 10.7 gate?to?drain charge q gd 5.8 total gate charge q g(tot) v gs = 10 v, v ds = 12 v; i d = 30 a 56 nc gate resistance r g t a = 25 c 1.0 switching characteristics, v gs = 4.5 v (note 5) turn?on delay time t d(on) v gs = 4.5 v, v dd = 12 v, i d = 15 a, r g = 3.0 17.6 ns rise time t r 55.1 turn?off delay time t d(off) 29.4 fall time t f 9.96 switching characteristics, v gs = 10 v (note 5) turn?on delay time t d(on) v gs = 10 v, v dd = 12 v, i d = 15 a, r g = 3.0 11.3 ns rise time t r 44.2 turn?off delay time t d(off) 39.2 fall time t f 7.1 drain?source diode characteristics forward diode voltage v sd v gs = 0 v, i s = 2.0 a t j = 25 c 0.38 0.6 v t j = 125 c 0.297 reverse recovery time t rr v gs = 0 v, dis/dt = 100 a/ s, i s = 30 a 61.3 ns charge time t a 30.4 discharge time t b 30.9 reverse recovery charge q rr 66 nc product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 5. pulse test: pulse width 300 s, duty cycle 2%. 6. switching characteristics are independent of operating junction temperatures.
NTMFS4H013NF www. onsemi.com 3 typical characteristics figure 1. on?region characteristics figure 2. transfer characteristics v ds , drain?to?source voltage (v) v gs , gate?t o?source voltage (v) 3.0 2.5 2.0 1.5 1.0 0.5 0 0 20 40 60 100 4.0 2.5 2.0 1.5 1.0 0.5 0 0 figure 3. on?resistance vs. gate?to?source voltage figure 4. on?resistance vs. drain current and gate voltage v gs , gate voltage (v) ?i d , drain current (a) 9 810 7 6 5 4 3 0 120 80 100 60 40 20 0.6 1.2 figure 5. on?resistance variation with temperature figure 6. drain?to?source leakage current vs. voltage t j , junction temperature ( c) v ds , drain?to?source voltage (v) 125 100 75 50 25 0 ?25 ?50 0.7 0.8 1.0 1.1 1.2 1.4 1.5 1.7 25 20 15 5 1e?07 1e?05 1e?04 1e?03 1e?01 ?i d , drain current (a) ?i d , drain current (a) r ds(on) , drain?to?source resistance (m ) r ds(on) , normalized drain?to? source resistance ( ) ?i dss , leakage (a) 120 0.5 140 160 r ds(on) , drain?to?source resistance (m ) 0.9 1.0 150 0.9 1.3 1.6 i d = 30 a v gs = 10 v v gs = 10 v to 3.0 v v gs = 2.8 v v gs = 2.4 v v gs = 2.0 v t j = 25 c t j = ?55 c v ds 10 v t j = 125 c t j = 25 c v gs = 4.5 v v gs = 10 v t j = 85 c t j = 125 c t j = 150 c t j = 25 c v gs = 2.6 v 80 160 20 40 60 100 120 80 160 3.0 3.5 0.7 0.8 1.1 1e?06 10 1e?02 140 140 t j = 25 c i d = 30 a 2 1.0 1.5 2.0 2.5 3.0 3.5 4.0 1.8
NTMFS4H013NF www. onsemi.com 4 typical characteristics figure 7. capacitance variation figure 8. gate?to?source and drain?to?source voltage vs. total charge ?v ds , drain?to?source voltage (v) q g , total gate charge (nc) 25 20 15 10 5 0 0 500 1500 3000 4500 5000 56 24 16 8 0 0 2 4 6 8 10 figure 9. resistive switching time variation vs. gate resistance figure 10. diode forward voltage vs. current r g , gate resistance ( ) v sd , source?to?drain voltage (v) 100 10 1 1 10 100 1000 1.0 0.7 0.6 0.5 0.4 0.3 0 20 60 80 120 figure 11. maximum rated forward biased safe operating area figure 12. maximum avalanche energy vs. starting junction temperature v ds , drain?to?source voltage (v) t j , starting junction temperature ( c) 100 10 1 0.1 0.01 0.01 0.1 1 10 100 1000 150 125 100 75 50 25 0 40 80 120 180 c, capacitance (pf) ?v gs , gate?t o?source voltage (v) t, time (ns) i s , source current (a) i d , drain current (a) e as , single pulse drain?to? source avalanche energy (mj) 1000 2500 4000 40 48 t j = 25 c v gs = 12 v f = 1 mhz c iss c oss c rss t j = 25 c v ds = 12 v i d = 30 a q t q gd q gs t d(off) t d(on) t r t f t j = 125 c t j = 25 c 0 v v gs 10 v single pulse t a = 25 c t j = 150 c 100 s 1 ms 10 ms dc r ds(on) limit thermal limit package limit i d = 33 a 60 100 140 v ds = 12 v i d = 15 a v gs = 10 v 2000 3500 32 0.8 160 20 160 0.9 40 100 140 t j = ?55 c 10 s
NTMFS4H013NF www. onsemi.com 5 typical characteristics figure 13. thermal characteristics pulse time (sec) 0.01 0.001 1 0.0001 0.1 0.00001 10 0.000001 0.01 0.1 1 10 100 figure 14. gfs vs. i d figure 15. avalanche characteristics i d , drain current (a) pulse width (sec) 140 120 100 80 60 40 20 0 0 100 200 300 1e?02 1 10 100 1000 r(t) ( c/w) g fs , transconductance (s) i d , drain current (a) 100 1000 1e?03 1e?05 1e?06 1e?07 150 50% duty cycle single pulse 20% 10% 5% 2% 1% pcb cu area 645.16 mm 2 pcb cu thk 2 oz 50 250 1e?04 ordering information device package shipping ? NTMFS4H013NFt1g so8?fl (pb-free) 1500 / tape & reel NTMFS4H013NFt3g so8?fl (pb-free) 5000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. so?8 flat lead case 488aa style 1 marking diagram a = assembly location y = year w = work week zz = lot traceability 1 h13nf aywzz s s s g d d d d
NTMFS4H013NF www. onsemi.com 6 package dimensions dfn5 5x6, 1.27p (so?8fl) case 488aa issue k style 1: pin 1. source 2. source 3. source 4. gate 5. drain m 3.00 3.40 0 ??? 3.80 12 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeter. 3. dimension d1 and e1 do not include mold flash protrusions or gate burrs. 1234 top view side view bottom view d1 e1 d e 2 2 b a 0.20 c 0.20 c 2 x 2 x dim min nom millimeters a 0.90 1.00 a1 0.00 ??? b 0.33 0.41 c 0.23 0.28 d 5.15 d1 4.70 4.90 d2 3.80 4.00 e 6.15 e1 5.70 5.90 e2 3.45 3.65 e 1.27 bsc g 0.51 0.61 k 1.20 1.35 l 0.51 0.61 l1 0.125 ref a 0.10 c 0.10 c detail a 14 l1 e/2 8x d2 g e2 k b a 0.10 b c 0.05 c l detail a a1 e 3 x c 4 x c seating plane max 1.10 0.05 0.51 0.33 5.10 4.20 6.10 3.85 0.71 1.50 0.71 m *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 1.270 2x 0.750 1.000 0.905 0.475 4.530 1.530 4.560 0.495 3.200 1.330 0.965 2x 2x 3x 4x 4x pin 5 (exposed pad) 5.00 5.30 6.00 6.30 on semiconductor and the are registered trademarks of semiconductor components industries, llc (scillc) or its subsidia ries in the united states and/or other countries. scillc owns the rights to a number of pa tents, trademarks, copyrights, trade secret s, and other intellectual property. a listin g of scillc?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any product s herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any part icular purpose, nor does sci llc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typi cal? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating param eters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgic al implant into the body, or other applications intended to s upport or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer s hall indemnify and hold scillc and its officers , employees, subsidiaries, affiliates, and dist ributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufac ture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 NTMFS4H013NF/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative
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