80812 tkim/n1003tn (kt)/72098ha (kt)/8219mo/4097ta, ts no.2510-1/9 http://onsemi.com semiconductor components industries, llc, 2013 september, 2013 2SC4134 bipolar transistor 100v, 1a, low v ce ( sat ) , npn single tp/tp-fa applications ? power supplies, relay drivers, lamp drivers features ? adoption fbet, mbit processes ? high breakdown voltage and large current capacity ? fast switching speed ? small and slim package permitting 2SC4134-applied sets to be made more compact speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector-to-base voltage v cbo 120 v collector-to-emitter voltage v ceo 100 v emitter-to-base voltage v ebo 6v collector current i c 1a collector current (pulse) i cp 2a continued on next page. package dimensions unit : mm (typ) package dimensions unit : mm (typ) 7518-003 7003-003 ordering number : en2510b product & package information ? package : tp ? package : tp-fa ? jeita, jedec : s c-64, to-251 ? jeita, jedec : sc-63, to-252 ? minimum packing quantity : 500 pcs./bag ? minimum packing quantity : 700 pcs./reel marking packing type (tp-fa) : tl electrical connection (tp, tp-fa) tl 6.5 5.0 2.3 0.5 12 4 3 0.85 0.7 1.2 0.6 0.5 2.3 2.3 7.0 7.5 1.6 0.8 5.5 1.5 1 : base 2 : collecto r 3 : emitter 4 : collecto r tp 6.5 5.0 2.3 0.5 12 4 3 0.85 0.6 0.5 1.2 1.2 2.3 2.3 7.0 2.5 5.5 1.5 0.8 0 to 0.2 1 : base 2 : collecto r 3 : emitter 4 : collecto r tp-fa c4134 lot no. rank 2,4 3 1 2SC4134s-e 2SC4134t-e 2SC4134s-tl-e 2SC4134t-tl-e
2SC4134 no.2510-2/9 continued from preceding page. parameter symbol conditions ratings unit collector dissipation p c 0.8 w tc=25 c10w junction temperature tj 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector cutoff current i cbo v cb =100v, i e =0a 100 na emitter cutoff current i ebo v eb =4v, i c =0a 100 na dc current gain h fe v ce =5v, i c =100ma 100* 400* gain-bandwidth product f t v ce =10v, i c =100ma 120 mhz output capacitance cob v cb =10v, f=1mhz 8.5 pf collector-to-emitter saturation voltage v ce (sat) i c =400ma, i b =40ma 0.1 0.4 v base-to-emitter saturation voltage v be (sat) i c =400ma, i b =40ma 0.85 1.2 v collector-to-base breakdown voltage v (br)cbo i c =10 a, i e =0a 120 v collector-to-emitter breakdown voltage v (br)ceo i c =1ma, r be = 100 v emitter-to-base breakdown voltage v (br)ebo i e =10 a, i c =0a 6 v turn-on time t on see speci ed test circuit. 80 ns storage time t stg 850 ns fall time t f 50 ns * : the 2SC4134 is classi ed by 100ma h fe as follows : rank r s t h fe 100 to 200 140 to 280 200 to 400 switching time test circuit ordering information device package shipping memo 2SC4134s-e tp 500pcs./bag pb free 2SC4134t-e tp 500pcs./bag 2SC4134s-tl-e tp-fa 700pcs./reel 2SC4134t-tl-e tp-fa 700pcs./reel v r r l --5v 50v i c =10i b1 = --10i b2 =400ma + + 50 input outpu t r b 100 f 470 f pw=20 s i b1 i b2 dc 1% stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty.
2SC4134 no.2510-3/9 1.0 0.8 0.6 0.4 0.2 0 01 3 245 i b =0 itr03996 2ma 1ma 3ma 5ma 15ma 10ma 30ma 25ma 20ma 500 400 300 200 100 0 010 30 20 40 50 i b =0 itr03998 0.5ma 1.0ma 2.0ma 1.5ma 2.5ma i c -- v ce collector current, i c -- a collector-to-emitter voltage, v ce -- v i c -- v ce collector current, i c -- m a collector-to-emitter voltage, v ce -- v 0 0.2 0.4 0.6 0.8 1.0 1.2 0 0.2 0.4 0.6 0.8 1.0 1.2 itr04000 v ce =5v ta=75 c 25 c --25 c 10 2 3 5 7 100 2 3 5 7 1000 72357 0.01 0.1 23 23 57 1.0 itr04002 v ce =5v 25 c --25 c ta=75 c itr04004 3 5 5 3 2 7 7 1.0 10 2 73572 2 357 0.01 0.1 1.0 i c / i b =10 75 c 25 c ta=--25 c 2 7 5 3 2 7 5 3 100 1000 2 735 2 72357 0.01 0.1 1.0 itr04006 i c / i b =10 25 c ta=75 c --25 c 100 10 0.01 0.1 3 2 2 7 5 3 27 35 27 735 1.0 itr04007 100 10 1.0 10 2 7 5 3 2 7 5 3 22 7 35 27 735 100 itr04008 v ce =10v f=1khz i c -- v be collector current, i c -- a base-to-emitter voltage, v be -- v h fe -- i c collector current, i c -- a dc current gain, h fe v be (sat) -- i c collector current, i c -- a base-to-emitter saturation voltage, v be (sat) -- v v ce (sat) -- i c collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- mv f t -- i c gain-bandwidth product, f t -- mhz collector current, i c -- a cob -- v cb collector-to-base voltage, v cb -- v output capacitance, cob -- pf
2SC4134 no.2510-4/9 1.0 0.1 0.01 7 5 3 2 7 5 7 5 3 2 3 2 1.0 10 57 2 3 57 100 22 357 0 12 10 8 6 0.8 4 2 20 060 40 80 100 140 120 160 itr04010 itr04009 dc operation ta=25 c tc=25 c i cp =2.0a i c =1.0a 100ms 1ms 10ms no heat sink a s o collector current, i c -- a collector-to-emitter voltage, v ce -- v collector dissipation, p c -- w p c -- ta ambient temperature, ta -- c ta=25 c single pulse
2SC4134 no.2510-5/9 taping speci cation 2SC4134s-tl-e, 2SC4134t-tl-e
2SC4134 no.2510-6/9 outline drawing land pattern example 2SC4134s-tl-e, 2SC4134t-tl-e mass (g) unit 0.282 * for reference mm unit: mm 7.0 1.5 2.3 2.0 2.5 2.3 7.0
2SC4134 no.2510-7/9 bag packing speci cation 2SC4134s-e, 2SC4134t-e
2SC4134 no.2510-8/9 outline drawing 2SC4134s-e, 2SC4134t-e mass (g) unit 0.315 * for reference mm
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