advanced power p-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss -20v small package outline r ds(on) 52m surface mount device i d -5a description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 62.5 /w data and specifications subject to change without notice thermal data 200809021 parameter total power dissipation operating junction temperature range storage temperature range 2 -55 to 150 -55 to 150 parameter drain-source voltage gate-source voltage continuous drain current 3 continuous drain current 3 -4 pulsed drain current 1 -20 rohs-compliant product 1 AP2607GY rating -20 + 8 -5 advanced power mosfets utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. the sot-26 package is widely used for all commercial-industrial applications. g d s d d d d g s sot-26
ap2607g y electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -20 - - v r ds(on) static drain-source on-resistance 2 v gs =-4.5v, i d =-5a - - 52 m ? ? ? ,
ap2607g y 65m 2.01e+08
ap2607g y 65m
package outline : sot-26 millimeters symbols min nom max a 2.70 2.90 3.10 b 2.60 2.80 3.00 c 1.40 1.60 1.80 d 0.30 0.43 0.55 e 0.00 0.05 0.10 g i j l 1.all dimension are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : sot-26 0.37ref 0.95ref 1.90ref advanced power electronics corp. 0.12ref h 1.20ref ygyy part number : yg d date code yy:2004,2008,2012? yy :2003,2007,2011? y y:2002,2006,2010? yy :2001,2005,2009? c b l l g e j i a h 5
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