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| Datasheet File OCR Text: |
| process CPD96V schottky diode 500ma low v f schottky diode chip princip al device types cmhsh5-2l cmhsh5-4 process epitaxial planar die size 20 x 20 mils die thickness 7.1 mils anode bonding pad area 16 x 16 mils top side metalization al - 20,000? back side metalization au - 12,000? process details 145 adams avenue hauppauge, ny 11788 usa tel: (631) 435-1110 fax: (631) 435-1824 www.centralsemi.com anode r 0 geometry r1 (12- september 2003) gross die per 4 inch w afer 28,028 backside cathode
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