s mhop microelectronics c orp. a product summary v dss i d r ds(on) (m ) max 40v 47a 11 @ vgs=4.5v 9 @ vgs=10v features super high dense cell design for low r ds(on) . rugged and reliable. to-252 and to251 package. n-channel logic enhancement mode field effect transistor www.samhop.com.tw mar,15,2010 1 details are subject to change without notice. g g s s s t u serie s to - 2 5 2 aa ( d - p a k ) g g s s d d s t d serie s to - 2 5 1 ( i - p a k ) stu/d438a ver 1.0 green product symbol v ds v gs i dm e as w a p d c 27 -55 to 150 i d units parameter 40 47 138 v v 20 t c =25 c gate-source voltage drain-source voltage thermal characteristics mj absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-continuous a -pulsed b a sigle pulse avalanche energy d maximum power dissipation a operating junction and storage temperature range t j , t stg 50 c/w thermal resistance, junction-to-ambient r ja t c =25 c 3 c/w thermal resistance, junction-to-case r jc a t c =70 c 38 t c =70 c w 42 a a 169
4 symbol min typ max units bv dss 40 v 1 i gss 100 na v gs(th) 1 v g fs s c iss 1460 pf c oss 245 pf c rss 175 pf q g 24 nc 30 nc q gs 67 nc q gd 25 t d(on) 25 ns t r 2.5 ns t d(off) 7 ns t f ns gate-drain charge v ds =20v,v gs =0v switching characteristics gate-source charge v dd =20v i d =1a v gs =10v r gen =6 ohm total gate charge rise time turn-off delay time v ds =20v,i d =24a,v gs =10v fall time turn-on delay time m ohm v gs =10v , i d =24a v ds =10v , i d =24a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance i dss ua gate threshold voltage v ds =v gs ,i d =250ua v ds =32v , v gs =0v v gs =20v,v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t c =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v,i d =250ua reverse transfer capacitance on characteristics 3 v gs =4.5v , i d =21a m ohm c f=1.0mhz c v ds =20v,i d =24a, v gs =10v drain-source diode characteristics c www.samhop.com.tw mar,15,2010 2 nc v ds =20v,i d =24a,v gs =4.5v 12.5 1.6 79 8.5 11 70 v sd diode forward voltage v gs =0v,i s =20a 0.8 1.3 v notes a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. d.starting t j =25 c,l=0.5mh,v dd = 20v.(see figure13) _ _ _ stu/d438a ver 1.0
www.samhop.com.tw mar,15,2010 3 tj( c) i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized i d , drain current(a) tj, junction temperature( c) figure 3. on-resistance vs. drain current and gate voltage figure 4. on-resistance variation with drain current and temperature vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c) figure 5. gate threshold variation with temperature tj, junction temperature( c) figure 6. breakdown voltage variation with temperature stu/d438a ver 1.0 120 96 72 48 24 0 0 0.5 1.0 1.5 2.0 2.5 3.0 vgs=3 v v gs= 1 0v vgs= 3.5 v vgs=4 v vgs= 4 .5v 35 28 21 14 7 0 0 0.7 4.2 3.5 2.8 2.1 1.4 25 c tj=1 25 c -55 c 24 20 16 12 8 4 1 1 24 48 72 96 120 vgs= 4 .5v vgs= 10 v 2.0 1.8 1.6 1.4 1.2 1.0 0 0 100 75 25 50 125 150 v gs =10v i d =24a gs =4.5 i d =21a vv 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 v ds =v gs i d =250ua 1.15 1.10 1.05 1.00 0.95 0.90 0.85 125 150 100 75 50 25 0 -25 -50 i d =250ua
www.samhop.com.tw mar,15,2010 4 r ds(on) (m ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage is, source-drain current(a) v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge 30 25 20 15 10 5 0 24 68 10 0 25 c 125 c i d =24a 75 c 60.0 1.0 0 1.2 25 c 75 c 125 c 0.96 0.72 0.48 0.24 10.0 10 15 20 25 30 2400 2000 1600 1200 800 400 0 ciss coss crss 10 8 6 4 2 0 0510 15 20 25 30 35 40 v ds =20v i d =24a stu/d438a ver 1.0 switching time(ns) rg, gate resistance( ) figure 11. switching characteristics i d , drain current(a) v ds , drain-source voltage(v) figure 12. maximum safe operating area 0.1 1 10 100 100 10 1 r ds ( o n ) limi t v gs =10v single pulse t a =25 c 110 100 dc 0.1 1 ms 10 0 u s 10m s 05 vds=20v,id=1a vgs=10v 10 1 100 td(off ) tf tr td(on)
t p v (br )dss i as r g i as 0.01 t p d.u.t l v ds + - v dd dr ive r a 15v 20v f igure 13a. figure 13b. u nc l am p ed s in d u ct i ve t e t ci r c u i t o fr m w ave s u nc l am p ed in d u ct i ve www.samhop.com.tw mar,15,2010 5 normalized transient thermal resistance square wave pulse duration(sec) figure 14. normalized thermal transient impedance curve 2 1 0.1 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 110 d=0.5 0.2 0.1 0.05 0.02 0.01 p dm t 1 t 2 1. r j ja (t)=r (t) * r j ja 2. r j ja =s ee datasheet 3. t jm- t a =p dm *r j ja (t) 4. duty cycle, d=t 1 /t 2 single pulse stu/d438a ver 1.0
stu/d438a ver 1.0 www.samhop.com.tw mar,15,2010 6 package outline dimensions to-251 e2 d e d1 12 3 l2 p l1 h b b2 b1 e1 a c d3 a1 symbol millimeters inches min max min max a 2.100 2.500 a1 0.350 0.650 b 0.400 b1 0.650 1.050 0.500 b2 0.900 c 0.400 0.600 d 5.300 5.700 d1 4.900 5.300 6.700 d2 7.300 d3 7.000 8.000 h 13.700 e 6.300 6.700 e1 4.600 4.900 4.800 5.200 e2 l 1.300 l1 1.400 l d2 l2 p 0.800 15.300 1.700 1.800 0.500 0.900 2.300 bsc 0.091 bsc 0.083 0.098 0.014 0.026 0.016 0.031 0.026 0.041 0.020 0.035 0.016 0.024 0.209 0.224 0.193 0.209 0.264 0.287 0.276 0.315 0.539 0.602 0.248 0.264 0.181 0.193 0.189 0.205 0.051 0.067 0.055 0.071 0.020 0.035
stu/d438a ver 1.0 www.samhop.com.tw mar,15,2010 7 to-252 0.200 0.400 0.889 5.300 8.900 0.508 ref. l4 0.500 2.290 ref b1 6.300 6.731 b l3 1.397 1.770 l1 a1 2.743 ref. l2 5.515 4.900 1 2 3 e1 d e b2 d1 l3 l4 b1 e b h c a detail "a" 1 l l1 a1 l2 detail "a" a 2.100 2.500 max min 0.000 0.770 1.140 c 0.400 0.600 d 6.223 d1 e e 10.400 l h 1.100 1 0 7 ref. 10 max min millimeters inches 0.083 0.098 0.000 0.008 0.016 0.035 0.030 0.045 0.016 0.024 0.209 0.245 0.193 0.217 0.248 0.265 0.090 bsc 0.350 0.409 0.055 0.070 0.108 ref. 0.020 ref. 0.020 0.043 0 7 ref . 10 symbols e1 4.400 5.004 0.173 0.197 b2 4.800 5.460 0.189 0.215 1.700 0.890 0.035 0.067
ver 1.0 www.samhop.com.tw mar,15,2010 8 to-251 tube/to-252 tape and reel data to-252 carrier tape to-252 reel unit: @ package to-252 (16 @ * a0 b0 k0 d0 d1 ee1e2p0 p1 p2 t 6.96 2 0.1 10.49 2.79 ? 2 ? 1.5 + 0.1 -0 16.0 2 0.3 1.75 2 0.1 7.5 2 0.15 8.0 2 0.1 4.0 2 0.1 2.0 2 0.15 0.3 2 0.05 unit: @ tape size 16 @ reel size ? 330 m n w t h k s g r v ? 330 2 0.5 ? 97 2 1.0 17.0 + 1.5 -0 2.2 ? 13.0 +0.5 - 0.2 10.6 2.0 2 0.5 "a " to-251 tube 540 1.5 + 2~ ? 3.0 4.5 5.5 7.50 1.25 0.4 1.90 1.4 6.60 1.65 2.25 19.75 5.25 d1 a0 d0 p0 e1 e2 p1 p2 b0 t k0 feed direction t n m w g v r e 2 0.1 2 0.1 s k h stu/d438a
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