switching diode UMR11N ? applications ? dimensions (unit : mm) ? land size figure (unit : mm) high frequency switching ? features 1)small mold type.(umd6) 2)high reliability ? construction silicon epitaxial planer ? structure ? taping specifications (unit : mm) ? absolute maximum ratings (ta=25 ? c) symbol unit v rm v v r v i fm ma io ma i surge a pd mw tj ? c tstg ? c ? electical characteristics (ta=25 ? c) symbol min. typ. max. unit conditions v f - - 1.2 v i f =100ma i r - - 0.1 a v r =70v ct - - 3.5 pf v r =6v , f=1mhz trr -- 4ns parameter limits reverse voltage (repetitive peak) 80 reverse voltage (dc) 80 forward current (single) 300 average retcified forward current 100 surge current (t=1us) 4 power dissipation 200 junction temperature 150 reverse recoverytime v r =6v,i f =5ma,rl=50 ? storage temperature ? 55 to ? 150 parameter forward voltage reverse current capacitance between terminals dot (year week factory) 2.00.2 2.10.1 1.250.1 0.25 0.1 0.05 `?? ? (5) (6) (4) 1.30.1 0.65 0.65 (1) (3) (2) 0.150.05 0.90.1 0.7 0.1min 00.1 each lead has same dimension rohm : umd6 jeita : sc-88 jedec : sot-363 umd6 0.35 0.9 1.6 0.650.65 (1) (2) (3) (4) (5) (6) 2.20.1 4.00.1 4.00.1 2.00.05 1.50.1 0 3.50.05 1.750.1 8.00.2 1.10.1 2.450.1 2.40.1 5.50.2 1.150.1 2.40.1 0.30.1 00.5 1/3 2011.06 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
UMR11N 0 1 2 3 4 5 6 7 8 9 10 ave:1.98pf v r =6v f=1mhz d3,d4 0 10 20 30 40 50 60 70 80 90 100 900 910 920 930 940 950 0.001 0.01 0.1 1 10 100 1000 10000 0 1020304050607080 ta=125 ? c ta=-25 ? c ta=25 ? c ta=75 ? c ta=150 ? c d3,d4 0.01 0.1 1 10 100 1000 10000 0 1020304050607080 ta=125 ? c ta=75 ? c ta=150 ? c d1,d2 ta=25 ? c ta=-25 ? c 0.1 1 10 100 0 100 200 300 400 500 600 700 800 900 100 0 ta=-25 ? c ta=125 ? c ta=75 ? c ta=25 ? c ta=150 ? c d3,d4 0.1 1 10 100 0 100 200 300 400 500 600 700 800 900 100 0 ta=-25 ? c ta=125 ? c ta=75 ? c ta=25 ? c ta=150 ? c 0 1 2 3 4 5 6 7 8 9 10 0 10 20 30 40 50 60 70 80 90 100 d3,d4 850 860 870 880 890 900 d3,d4 0.1 1 10 0 5 10 15 20 d3,d4 0.1 1 10 0 5 10 15 20 forward current:i f (ma) reverse current:i r (na) reverse voltage v r (v) v r -i r characteristics capacitance between terminals:ct(pf) reverse voltage:v r (v) v r -ct characteristics v f dispersion map forward voltage:v f (mv) reverse current:i r (na) i r dispersion map capacitance between terminals:ct(pf) ct dispersion map forward voltage v f (mv) v f -i f characteristics reverse current:i r (na) reverse voltage v r (v) v r -i r characteristics reverse voltage:v r (v) v r -ct characteristics capacitance between terminals:ct(pf) v f dispersion map forward voltage:v f (mv) reverse current:i r (na) i r dispersion map f=1mhz f=1mhz ave:921.7mv ta=25 ? c i f =100ma n=30pcs ave:870.1mv ta=25 ? c i f =100ma n=30pcs ta=25 ? c v r =70v n=30pcs ave:9.655na ta=25 ? c v r =70v n=30pcs ave:4.310na ave:1.17pf ta=25 ? c v r =6v f=1mhz n=10pcs d1,d2 d1,d2 d1,d2 d1,d2 d1,d2 capacitance between terminals:ct(pf) ct dispersion map forward voltage v f (mv) v f -i f characteristics forward current:i f (ma) 2/3 2011.06 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
UMR11N 0 1 2 3 4 5 6 7 8 9 10 ave:1.93ns v r =6v i f =5ma rl=50 ? d1,d2 d3,d4 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 rth(j-a) rth(j-c) 0 5 10 15 20 ave:3.50a 8.3ms ifsm 1cyc d1,d2 time:t(s) rth-t characteristics transient thaermal impedance:rth (c/w) trr dispersion map reverse recovery time:trr(ns) ave:2.40ns 1ms im=1ma i f =10ma 300us time mounted on epoxy board i fsm dispersion map peak surge forward current:i fsm (a) 0 5 10 15 20 ave:2.50a 8.3ms ifsm 1cyc d3,d4 i fsm dispersion map peak surge forward current:i fsm (a) 3/3 2011.06 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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