symbol parameters & conditions unit min. typ. max. v ce = 24v, i c = 1. 3 a, class a,common emitter unless stated jc thermal resistance 4 .2 c/w features: high gain bandwidth product f t = 3.0 ghz typ @ i c = 1. 0 a ? high gain g pe = 8 .0 db @ 1.0 ghz ? high thermal efficiency beo 6 lead flange package performance d ata: electrical characteristics (t a = 25 o c) p 1db output power at 1db compression f = 1.0 ghz w 10 .0 g pe c la ss a p out = 10 w f = 1.0 ghz db 8 .0 efficiency: class a % 30 h fe forward current transfer ratio: f = 1.0 mhz 20 40 100 c cb collector base capacitance: f = 1.0 mhz pf 18 .0 v ce = 8.0v, i c = 2 00 ma i e = 0 p t total power dissipation w 30 description and applications: bipolarics' bpt033 6 are high performance silicon bipolar transistors intended for medium and high power , linear and cw applications to 1.0 ghz. high f t and high breakdown voltages make the bpt033 6 an excellent choice for many 12v and 24v communication systems. absolute maximum ratings: symbol parameters rating units v ces collector-base voltage 50 v v ceo collector-emitter voltage 30 v v ebo emitter-base voltage 3.5 v i c collector current 1 .6 ma t j junction temperature 200 o c t stg storage temperature -65 to 200 o c product data sheet bipolarics, inc. part number bpt033 6 npn silicon microwave power transistors
bipolarics, inc part number bpt03 36 page 2 silicon microwave power transistor lead 123456 -c11 emitter base emitter emitter collector emitter package bipolarics inc. 467 66 la ke vi ew b lv d. f rem on t, ca 94 538 phone: (510)226-6565 fax: (510) 226-6765 c11 0.230" x 0.360" 6 lead flange package 0.065 (1.651) 45 0 0.12 (3.048) .0.360 (9.144) 0.230 (5.842) 0.430 (10.92) 0.115 (2.921) 0.725 (18.42) 0.975 (24.77) 0.005 (0.127) 0.125 (3.175) 0.170 (4.318) 123 456 0.109 (2.769) 0.25 (6.35) notes: (unless otherwise specified) 1. dimensions are in 2. tolerances: in .xxx = .005 mm .xx = .13 3. all dimensions nominal; subject to change without notice (mm) drawings are not to scale.
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