ksd-t0o003-002 1 STK830F power mosfet s s e e m m i i c c o o n n d d u u c c t t o o r r switching regulato r applications features ? high voltage: bv dss =500v( m in.) ? low c rss : c rss =8.4pf(typ.) ? low gate charge : qg=17nc(typ.) ? low r ds(on) :r ds(on) =1.5 (max.) ordering information type no. marking package code STK830F stk830 to-220f-3l outline dimensions unit : mm 9.80~10.20 15.40~15.80 3.05~3.35 12.20~12.60 9.10~9.30 3.46 typ. 1.07 min. 0.90 max. 2.54 typ. 2.54 typ. 4.70 max. 2.70 max. 0.60 max. 1 2 3 0.60 max. 2.60~3.00 pin connections 1. gate 2. drain 3. source
ksd-t0o003-002 2 STK830F absolute maximum ratings (tc=25 c) characteristic symbol rating unit drain-source voltage v dss 500 v gate-source voltage v gss 30 v t c =25 4.5 a drain current (dc) i d t c =100 3.3 a drain current (pulsed) * i dm 18 a drain power di ssipation p d 28 w avalanche current (single) i as 4.5 a single pulsed aval anche energy e as 250 mj avalanche current (repetitive) i ar 4.5 a repetitive avalanche energy e ar 5.0 mj junction temperature t j 150 c storage temperature range t stg -55~150 c * limited by maximum junction temperature characteristic symbol typ. max unit junction-case r th(j-c) - 4.46 thermal resistance junction-ambient r th(j-a) - 62.5 /w
ksd-t0o003-002 3 STK830F electrical characteristics (tc=25 c) characteristic symbol test condition min. typ. max. unit drain-source breakdown voltage v (br)dss i d =250 ? , v gs =0v 500 - - v gate threshold voltage v gs(th) i d =250 ? , v ds = v gs 2.0 - 4.0 v drain-source cut-off current i dss v ds =500v, v gs =0v - - 10 ? gate leakage current i gss v ds =0v, v gs = 30v - - 100 ? drain-source on-resistance r ds(on) v gs =10v, i d =2.25a - - 1.5 forward transfer conductance g fs v ds =10v, i d =2.25a - 3.3 - s input capacitance c iss - 550 830 output capacitance c oss - 46 70 reverse transfer capacitance c rss v gs =0v, v ds =25v f=1 mhz - 8.4 15 ? tu r n - o n de l ay t i m e t d(on) - 12 - rise time t r - 46 - turn-off delay time t d(off) - 50 - fall time t f v dd =250v, i d =4.5a r g =12 ? - 48 - ? total gate charge q g - 17 26 gate-source charge q gs - 2.6 4.0 gate-drain charge q gd v ds =250v, v gs =10v i d =4.5a - 5.8 9.0 nc source-drain diode ratings and characteristics (tc=25 c) characteristic symbol test condition min typ max unit source current (dc) i s - - 4.5 source current (pulsed) i sp integral reverse diode in the mosfet - - 18 a forward voltage v sd v gs =0v, i s =4.5a - - 1.4 v reverse recovery time t rr - 188 - ? reverse recovery charge q rr i s =4.5a, v gs =0v di s /dt=100a/ ? - 2.1 - c note ; repetitive rating : pulse width limited by maximum junction temperature l=20mh, i as =4.5a, v dd =50v, r g =27 ? pulse test : pulse width 400 ? , duty cycle 2% essentially independent of operating temperature
ksd-t0o003-002 4 STK830F ` 1 fig. 1 i d - v ds fig. 3 r ds ( on ) - i d electrical characteristic curves fig. 4 i s - v sd fig. 2 i d - v gs fig. 6 v gs - q g fig. 5 capacitance - v ds
ksd-t0o003-002 5 STK830F * c ? c fig. 8 r ds(on) - t j fig. 7 v ( br ) dss - t j fig. 10 safe operating area fig. 9 i d - t c
ksd-t0o003-002 6 STK830F fig. 11 gate charge test circuit & waveform fig. 12 switching time test circuit & waveform fig. 13 e as test circuit & waveform
ksd-t0o003-002 7 STK830F rr fig. 14 peak diode recovery dv/dt test circuit & waveform
ksd-t0o003-002 8 STK830F the auk corp. products are intended for the use as components in general electronic equipment (office and co mmunication equipment, m easuring equipment, home appliance, etc.). please make sure that you consult with us before you use these auk corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to th e welfare of human life(atomi c energy control, airplane, spaceship, transportation, co mbustion control, all types of safety device, etc.). auk corp. cannot accept liability to any damage which may occur in case these auk corp. products were used in the mentioned equi pments without prior consultation with auk corp.. specifications mentioned in this publicati on are subject to change without notice.
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